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MS2208
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION
Features
• • • • • HERMETIC METAL/CERAMIC PACKAGE LOW THERMAL RESISTANCE 10:1 LOAD VSWR CAPABILITY BALLASTED OVERLAY GEOMETRY COMMON EMITTER CONFIGURATION
DESCRIPTION:
THE MS2208 DEVICE IS A HIGH POWER CLASS C TRANSISTOR SPECIFICALLY DESIGNED FOR L-BAND AVIONIC APPLICATIONS INVOLVING HIGH PULSE BURST DUTY CYCLES. THE DEVICE IS CAPABLE OF OPERATION OVER A WIDE RANGE OF PULSE WIDTHS, DUTY CYCLES AND TEMPERATURES.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
PDISS IC VCC TJ T STG
Parameter Power Dissipation* (TC≤100ºC)
Device Current * Collector Supply Voltage* Junction Temperature Storage Temperature
Value
1360 27 55 250 -65 to +200
Unit
W A V °C °C
Thermal Data
RTH(J-C) Junction - Case Thermal Resistance *Applies only to rated RF amplifier operation 0.11 °C/W
MSC0926.PDF 10-09-98
MS2208
ELECTRICAL SPECIFICATIONS (Tcase = 25° C) (Tcase STATIC
Symbol
Bvebo Bvcbo Bvces Ices HFE IE = 30 mA IC = 50 mA IC = 50 mA VBE = 50 mA VCE = 5.0 V
Test Conditions Min.
IC=0 mA IC=0 mA VBE=0 V VCE=50 V IC=1 A 3.0 70 70 --10
Value Typ.
-----------
Max.
------40 200
Unit
V V V mA B
DYNAMIC
Symbol
Pout ηc GP
Load Mismatch Conditions
Test Conditions Min.
Pin = 70W Pout Pout f=1090 MHz f=1090 MHz f=1090 MHz VCC=50V VCC=50V VCC=50V 500 40 8.5
Value Typ.
-------
Max.
-------
Unit
W % dB
Pout =500W Peak f=1090 MHz, Vcc=50V, VSWR=10:1, 10µsec, 1% Duty, VSWR=5:1, 32µsec, 2% Duty Pulse width=32µsec, Duty Cycle= 2%
IMPEDANCE DATA
FREQ 1030 MHz 1090 MHz 1120 MHz PIN=70W ZIN(Ω) 4.35+ j 6.97 4.38+ j 2.75 4.69+ j 2.95 VCC=50V ZCL(Ω) 1.38- j 4.08 0.874- j 3.55 1.3- j 4.97
MSC0926.PDF 10-09-98
MS2208
PACKAGE MECHANICAL DATA
MSC0926.PDF 10-09-98
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