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MS2209
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION
Features
• • • • • REFRACTORY/GOLD METALIZATION LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY EMITTER SITE BALLASTED
DESCRIPTION:
THE MS2209 AVIONICS POWER TRANSISTOR IS A BROADBAND, HIGH PEAK PULSE POWER DEVICE SPECIFICALLY DESIGNED FOR AVIONICS APPLICATIONS REQUIRING BROAD BANDWIDTH WITH MODERATED DUTY CYCLE AND PULSE WIDTH CONSTRAINTS SUCH AS GROUND/SHIP BASED DME/TACAN. THIS DEVICE IS ALSO CAPABLE OF SPECIALIZED APPLICATIONS INCLUDING JTIDS WITH REDUCED POWER UNDER PULSE FORMATS UTILIZING SHORT PULSE WIDTHS AND HIGH BURST OR OVERALL DUTY CYCLES.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25° C)
Symbol
PDISS IC VCC TJ T STG
Parameter Power Dissipation* (TC≤100ºC)
Device Current * Collector Supply Voltage* Junction Temperature Storage Temperature
Value
220 7.0 50 250 -65 to +200
Unit
W A V °C °C
Thermal Data
RTH(J-C) Junction - Case Thermal Resistance *Applies only to rated RF amplifier operation 0.80 °C/W
MSC0930.PDF 10-13-98
MS2209
ELECTRICAL SPECIFICATIONS (Tcase = 25° C) (Tcase STATIC
Symbol
Bvebo Bvcbo Bvcer Icbo HFE IE = 10 mA IC = 40 mA IC = 40 mA VCB = 50V VCE = 5.0 V
Test Conditions Min.
IC=0 mA IE=0 mA RBE=10Ω IC=2 A 3.0 65 65 --20
Value Typ.
-----------
Max.
------12 120
Unit
V V V mA B
DYNAMIC
Symbol
Pout ηc GP
Conditions
Test Conditions Min.
f=960-1215 MHz f=960-1215 MHz f=960-1215 MHz Pin = 13W Pin = 13W Pin = 13W VCC=50V VCC=50V VCC=50V 90 38 8.4
Value Typ.
100 44 ---
Max.
-------
Unit
W % dB
Pulse width=10µsec, Duty Cycle= 10%
PACKAGE MECHANICAL DATA
MSC0930.PDF 10-13-98
MS2209
MSC0930.PDF 10-13-98
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