UM2100_05

UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) DESCRIPTION UM2100 Series PIN diodes are designed for transmit/receive switch and attenuator applications in HF band (2-30MHz) and below. As series configured switches, these long lifetime (25µs typical) diodes can control up to 2.5 kW, CW in a 50 ohm system. In HF band, insertion loss is less than 0.25dB and isolation is greater than 32dB (off-state). The UM2100 series offers the lowest distortion performance in both the transmit and receive modes. Less than 50 mA forward bias is requires to obtain an IP3 of 60 dBm at 300 kHz with 1 watt per tone. The forward biased resistance/reactance vs. frequency characteristics are flat down to 10 kHz. The capacitance vs. reverse bias voltage characteristic is flat down to 2 MHz. In attenuator configuration, the UM2100 produces extremely low distortion at low values of attenuator control current, and very low insertion loss (0.2dB) in the “0dB” attenuator state. KEY FEATURES W WW . Microsemi . C OM HF band (2-30 MHz) PIN Long Lifetime (25µs typical) High Power ( 1kW, CW) High Isolation (32dB) Low Loss (0.25dB) Very Low Distortion (IP3=60dBm) Voltage ratings to 1000 V IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Package A O Condition 25 C Pin Temperature O PD 25 W 12 W 2.5 W 25 W 18.75 W 15W O θ 6 C/W 12.5 C/W 6 OC/W 8 OC/W 10 OC/W O APPLICATIONS/BENEFITS Isolated stud package available Surface mount package available RoHS compliant packaging available: use UMX2101B, etc. B & E ½ in. total length to 25 C Contact Free Air O C 25 C Stud Temperature D SM All O 25 C Stud Temperature O 25 C End Cap Temperature 1 us pulse (Single) OPERATING AND STORAGE TEMPERATURE RANGE 100 kW -65 OC to + 175 OC VOLTAGE RATINGS Reverse Voltage @ 10 uA 100V 200V 400V 600V 800V 1000V UM2101 UM2102 UM2104 UM2106 UM2108 UM2110 UM2100 UM2100 Copyright  2005 Rev. 0, 2005-12-13 Microsemi Page 1 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) W WW . Microsemi . C OM Parameter Total Capacitance Series Resistance Carrier Lifetime Reverse Current Symbol CT RS τ IR IP3 Conditions VR=100V, F= 1 MHz If = 100 mA, F= 2 MHz IF = 10 mA/100 V VR = Voltage rating P=2W total, IF=25mA F1 = 1.999 MHz F2 = 2.001 MHz 1.0 W/tone MIN. TYPICAL 1.9 1.0 25 60 MAX. 2.5 2.0 10 Units pF Ohms µs µA dBm 20 50 Style “B” Style “SM” DC curent r s y* uppl SI GNAL GENERAT R O * POWER SPLT ER IT f 1 RFC SPECT M RU ANALYZER * ELECTRICALS ELECTRICALS SI GNAL GENERAT R O f 2 * RFC * May be controlled with the IEEE-488 BUS CIRCUIT Copyright  2005 Rev. 0, 2005-12-13 Microsemi Page 2 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) W WW . Microsemi . C OM Rs versus If TYPICAL 10 2 f = 2 MHz 10 1 Rs (Ohms) 100 10-1 10-1 100 101 102 If (mA) RESISTANCE / REACTANCE VERSUS FREQUENCY TYPICAL 2.0 RESISTANCE / REACTANCE (Ohms) If = 100 mA 1.5 RESISTANCE 1.0 ELECTRICALS ELECTRICALS 0.5 REACTANCE 0.0 -0.5 102 103 104 105 106 107 FREQUENCY (Hz) Copyright  2005 Rev. 0, 2005-12-13 Microsemi Page 3 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) W WW . Microsemi . C OM POWER LEVEL/TONE VERSUS FORWARD BIAS CURRENT TYPICAL 40 F1 = F - 1 KHz F2 = F + 1 KHz 35 65 70 POWER LEVEL/TONE [dBm] 30 60 25 55 20 50 15 100 101 102 45 If NEEDED TO OBTAIN AN IM3 OF -60 dBc [mA] CAPACITANCE VERSUS VOLTAGE TYPICAL 20 10 KHz 18 16 100 KHz CAPACITANCE (pF) 14 200 KHz 12 IP3 [dBm] 2 MHz 1 MHz 500 KHz250 KHz 150 KHz ELECTRICALS ELECTRICALS 10 8 6 4 2 0 10-1 400 KHz 1 MHz 2 MHz 4 MHz 10 MHz 100 101 102 Vr (V) Copyright  2005 Rev. 0, 2005-12-13 Microsemi Page 4 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) W WW . Microsemi . C OM MEAN If VERSUS Vf CURVE VERSUS TEMPERATURE TYPICAL 101 100 10-1 10-2 10-3 10-4 10-5 10-6 0.0 0.5 1.0 1.5 150C--------------------------125C If (A) ---------------100C --------------75C -----25C Vf (V) ELECTRICALS ELECTRICALS ELECTRICALS ELECTRICALS Copyright  2005 Rev. 0, 2005-12-13 Microsemi Page 5 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) W WW . Microsemi . C OM STYLE “A” STYLE “B” STYLE “C” STYLE “CR” Copyright  2005 Rev. 0, 2005-12-13 Microsemi Page 6 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) W WW . Microsemi . C OM STYLE “D” STYLE “DR” STYLE “E” STYLE “SM” MECHANICL MECHANICL Copyright  2005 Rev. 0, 2005-12-13 Microsemi Page 7 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) W WW . Microsemi . C OM STYLE “SM” FOOTPRINT MECHANICAL MECHANICAL Copyright  2005 Rev. 0, 2005-12-13 Microsemi Page 8 UM2100 ATTENUATOR AND POWER PIN DIODES (2-30 MHz) NOTES: W WW . Microsemi . C OM NOTES NOTES Copyright  2005 Rev. 0, 2005-12-13 Microsemi Page 9