UPS560/TR13

UPS560 5 A Schottky Barrier Rectifier KEY FEATURES DESCRIPTION IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com ABSOLUTE MAXIMUM RATINGS AT 25º C (UNLESS OTHERWISE SPECIFIED) Rating Symbol Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM RMS Reverse Voltage Average Rectified Output Current Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine wave Superimposed on Rated Load@ Tc =90 ºC Storage Temperature Junction Temperature Value Unit 60 V VR (RMS) 42 V Io 5 A 100 A T STG -55 to +150 ºC TJ -55 to +125 ºC VR IFSM THERMAL CHARACTERISTICS (UNLESS OTHERWISE SPECIFIED) WWW . Microsemi .C OM In Microsemi’s new Powermite® SMT package, these high efficiency Schottky rectifiers offer the power handing capabilities previously found only in much larger packages. They are ideal for SMD applications that operate at high frequencies. In addition to its size advantages, Powermite® package features include a full metallic bottom that eliminates the possibility of solder flux entrapment during assembly, and a unique locking tab acts as an integral heat sink. Its innovative design makes this device ideal for use with automatic insertion equipment. High power surface mount package Guard Ring die construction for transient protection Internal heat sink locking tabs Low forward voltage Full metallic bottom eliminates flux entrapment Compatible with automatic insertion equipment Low profile-maximum height of 1mm supplied in 16 mm tape reel- 5000 units/ 13” reel. APPLICATIONS/BENEFITS Switching and Regulating Power Supplies Silicon Schottky (hot carrier) rectifier for minimal reverse voltage recovery Elimination of reverse-recovery oscillations to reduce need for EMI filtering Charge Pump Circuits Reduces reverse recovery loss due to low IRM Small foot print 190 X 270 mils (1:1 Actual size) See mounting pad details on pg 4 Thermal Resistance Junction-to Tab RθJTAB 7.5 ºC/Watt Junction-to Bottom RθJC 2.5 ºC/Watt UPS560 Copyright  2005 1-07-2005 REV A Microsemi Page 1 UPS560 5 A Schottky Barrier Rectifier ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified) Symbol Tj = 25 ºC Tj = 125 ºC Tj = 25 ºC Tj = 125 ºC Typ. Max 0.65 0.56 0.74 0.64 0.69 0.60 0.78 0.68 VFm VBR IR = 0.2 mA Irm VR = 60 V, Tj = 25ºC VR = 60 V, Tj =125 ºC 2 0.6 CT VR = 4 V; F = 1 MHZ 150 Reverse Current (Note1) Capacitance Min IF = 5 A , IF = 5 A , IF = 8 A , IF = 8 A , Forward Voltage (Note 1) Reverse Break Down Voltage (Note 1) Conditions 60 Units V V 200 20 µA mA WWW . Microsemi .C OM Parameter pF ELECTRICALS Note: 1 Short duration test pulse used to minimize self – heating effect. Copyright  2005 1-07-2005 REV A Microsemi Page 2 UPS560 5 A Schottky Barrier Rectifier WWW . Microsemi .C OM NOTE 1: TA = TC at case bottom where RθJC =2.5º C/W and RθCA = 0º C/W (infinite heat sink). NOTE 2: Device mounted on GETEK substrate, 2" x 2", 2 oz. copper , double-sided , cathode pad dimensions 0.75" x 1.0", anode pad dimensions 0.25" x 1.0". RθJA in range of 20-35° C/W. NOTE 3: Device mounted on FRA-4 substrate, 2" x 2", 2 oz. copper, single-sided, pad layout RθJA in range of 75 - 100° C/W. PRODUCT PRELIMINARY DATA – Information contained in this document is pre-production data, and is proprietary to Microsemi Corp. It may not be modified in any way without the express written consent of Microsemi Corp. Product referred to herein is not guaranteed to achieve preliminary or production status and product specifications, configurations, and availability may change at any time. Copyright  2005 1-07-2005 REV A Microsemi Page 3 UPS560 5 A Schottky Barrier Rectifier WWW . Microsemi .C OM MECHANICAL Copyright  2005 1-07-2005 REV A Microsemi Page 4 UPS560 5 A Schottky Barrier Rectifier WWW . Microsemi .C OM NOTES: NOTES Copyright  2005 1-07-2005 REV A Microsemi Page 5