USBQNM50415CE3/TR7

USBQNM50403Ce3 – USBQNM50424Ce3 Available 500 W, Non-Magnetic Low Capacitance Bidirectional TVS array HALOGEN FREE DESCRIPTION This Transient Voltage Suppressor (TVS) is assembled in a non-magnetic QFN-143 package with a leadframe 100% free of iron. It has the same pinout and footprint as the SOT-143 package and is aimed at applications in MRI machines and other magnetic environments where the use of ferrous metals is not acceptable. The configuration gives protection to 1 bidirectional data or interface line. It is designed for use in applications where low capacitance protection is required at the board level from voltage transients caused by electrostatic discharge (ESD) as defined in IEC 61000-4-2, electrical fast transients (EFT) per IEC 610004-4 and the secondary effects of lightning. These TVS arrays have a peak power rating of 500 watts for an 8/20 μs pulse (figure 1). With a capacitance of only 3 pF, this part can provide protection to very fast data lines including USB at 900 Mbits/sec. QFN-143 Important: For the latest information, visit our website http://www.microsemi.com. FEATURES • Also available: Protects 1 bidirectional line • Surge protection per IEC 61000-4-2 and IEC 61000-4-4 • Ultra low capacitance Unidirectional (QFN-143) • Low profile surface mount package • RoHS compliant versions are available USBQNM50403e3 – USBQNM50424e3 APPLICATIONS / BENEFITS • • • • EIA RS485 data rates: 5 Mbps 10 Base-T Ethernet USB data rate 900 Mbps Non-magnetic for MRI applications MAXIMUM RATINGS @ 25 ºC unless otherwise noted Parameters/Test Conditions Storage Temperature Junction Temperature Peak Pulse Power Dissipation with a 10/1000μs waveform (with a duty factor of 0.01%) Solder Temperature @ 10 s Symbol Value TSTG TJ PPP -55 to +150 -55 to +125 500 Unit o 260 o C C W o C MSC – Lawrence 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 or (978) 620-2600 Fax: (978) 689-0803 MSC – Ireland Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: www.microsemi.com RF01087-2, Rev B (3/23/15) ©2015 Microsemi Corporation Page 1 of 5 USBQNM50403Ce3 – USBQNM50424Ce3 MECHANICAL and PACKAGING • • • • • • • CASE: Void-free transfer molded thermosetting epoxy body meeting UL94V-0. TERMINALS: RoHS compliant annealed matte-tin plating over EFTEC64T non-magnetic copper alloy. Readily solderable per MIL-STD-750, method 2026. MARKING: Body marked with part number code (NxxC). POLARITY: Dot in corner indicates pin 1. TAPE-AND-REEL: Standard per EIA-481-B (add “TR” suffix to part number). Consult factory for quantities. WEIGHT: Approximately 16.53 milligrams See Package Dimensions on last page. PART NOMENCLATURE USB Q NM 5 04 03 C e3 USB Suitable RoHS Compliance QFN-143 Package Bidirectional Designator Non-Magnetic Rated Standoff Voltage (VWM) (see Electrical Characteristics table) 500 W PPP Rating 4 Pin Package SYMBOLS & DEFINITIONS Definition Symbol αV(BR) I(BR) ID IPP V(BR) VC VWM Temperature Coefficient of Breakdown Voltage: The change in breakdown voltage divided by the change in temperature that caused it expressed in %/°C or mV/°C. Breakdown Current: The current used for measuring breakdown voltage V(BR). Standby Current: The current through the device at rated stand-off voltage. Peak Impulse Current: The maximum rated random recurring peak impulse current or nonrepetitive peak impulse current that may be applied to a device. A random recurring or nonrepetitive transient current is usually due to an external cause, and it is assumed that its effect will have completely disappeared before the next transient arrives. Breakdown Voltage: The voltage across the device at a specified current I(BR) in the breakdown region. Clamping Voltage: The voltage across the device in a region of low differential resistance during the application of an impulse current (IPP) for a specified waveform. Working Standoff Voltage: The maximum-rated value of dc or repetitive peak positive cathode-to-anode voltage that may be continuously applied over the standard operating temperature. ELECTRICAL CHARACTERISTICS @ 25 ºC unless otherwise stated PART NUMBER USBQNM50403Ce3 USBQNM50405Ce3 USBQNM50412Ce3 USBQNM50415Ce3 USBQNM50424Ce3 DEVICE MARKING N03CE N05CE N12CE N15CE N24CE RF01087-2, Rev B (3/23/15) STANDOFF VOLTAGE VWM BREAKDOWN VOLTAGE V(BR) @ 1 mA Volts MAX 3.3 5.0 12.0 15.0 24.0 CAPACITANCE (f= 1 MHz) C @0V TEMPERATURE COEFFICIENT OF V(BR) αV(BR) µA pF mV/°C MAX MAX MAX 3 3 3 3 3 -5 1 8 11 28 CLAMPING VOLTAGE VC @ 5 Amp (Figure 2) Volts STANDBY CURRENT ID @ VWM Volts CLAMPING VOLTAGE VC @ 1 Amp (Figure 2) Volts MIN MAX MAX 4.0 6.0 13.3 16.7 26.7 8.0 10.8 19.0 24.0 43.0 11 12 26 32 57 200 40 1 1 1 ©2015 Microsemi Corporation Page 2 of 5 USBQNM50403Ce3 – USBQNM50424Ce3 PPP – Peak Pulse Power - kW GRAPHS tp – Pulse Time – µs IPP Peak Pulse Current - % IPP FIGURE 1 Peak Pulse Power vs. Pulse Time time – µs FIGURE 2 Pulse Waveform RF01087-2, Rev B (3/23/15) ©2015 Microsemi Corporation Page 3 of 5 USBQNM50403Ce3 – USBQNM50424Ce3 PACKAGE DIMENSIONS Ref. A B C D E F G H Dimensions Millimeters Min Max Min Max 0.112 0.116 2.85 2.95 0.096 0.100 2.45 2.55 0.0354 0.0366 0.900 0.930 0.020 0.024 0.50 0.60 0.031 NOM 0.80 NOM 0.069 NOM 1.75 NOM 0.018 NOM 0.45 NOM 0.076 NOM 1.92 NOM Inch PAD LAYOUT Ref. A1 A2 A3 B1 B2 C D E F G Dimensions Inch Millimeters Nominal Nominal 0.112 2.85 0.079 2.00 0.071 1.80 0.108 2.75 0.075 1.90 0.041 1.05 0.033 0.85 0.032 0.80 0.033 0.85 0.047 1.20 See schematic on next page RF01087-2, Rev B (3/23/15) ©2015 Microsemi Corporation Page 4 of 5 USBQNM50403Ce3 – USBQNM50424Ce3 SCHEMATIC Seen from above RF01087-2, Rev B (3/23/15) ©2015 Microsemi Corporation Page 5 of 5