3N164_TO-72

3N164 P-CHANNEL MOSFET The 3N164 is an enhancement mode P-Channel Mosfet The 3N164 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications. FEATURES  DIRECT REPLACEMENT FOR INTERSIL 3N164  ABSOLUTE MAXIMUM RATINGS1  @ 25°C (unless otherwise noted)  ‐65°C to +200°C  ‐55°C to +150°C  375mW  50mA  ‐30V  ‐30V  ±125V  CONDITIONS  VGS = ‐30V,   VDS = 0V  ID = ‐10µA,   VGS = 0V  IS = ‐10µA, VGD = 0V,  VBD = 0V  VDS =  VGS ,    ID = ‐10µA  VDS = ‐15V,   ID = ‐10µA  VDS = ‐15V,   ID = ‐0.5mA  VDS = ‐15V,   VGS = 0V  VDS = 15V,   VGS =  VDB = 0V  VGS = ‐20V,   ID = ‐100µA  VDS = ‐15V,  VGS = ‐10V  VDS = ‐15V,    ID = ‐10mA ,   f = 1kHz  Maximum Temperatures  Storage Temperature  (See Packaging Information). Operating Junction Temperature  Maximum Power Dissipation  Continuous Power Dissipation   3N164 Features: MAXIMUM CURRENT Very high Input Impedance Drain Current  Low Capacitance MAXIMUM VOLTAGES  High Gain Drain to Gate  High Gate Breakdown Voltage Drain to Source  Low Threshold Voltage Peak Gate to Source2 3N164 ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL  CHARACTERISTIC  MIN  TYP.  MAX  UNITS  IGSSF  Gate Forward Current   ‐10  ‐‐  ‐‐  pA    TA= +125°C  ‐‐  ‐‐  ‐25  BVDSS  Drain to Source Breakdown Voltage  ‐30  ‐‐  ‐‐      BVSDS  Source‐Drain Breakdown Voltage  ‐30  ‐‐  ‐‐  V  VGS(th)  Gate to Source Threshold Voltage  ‐2.0  ‐‐  ‐5.0  ‐2.0  ‐‐  ‐5.0  VGS  Gate Source Voltage  ‐3.0  ‐‐  ‐6.5  IDSS  Drain Leakage Current “Off”  ‐‐  ‐‐  200  pA  ISDS  Source Drain Current  ‐‐  ‐‐  400  rDS(on)  Drain to Source “On” Resistance  ‐‐  ‐‐  250  Ω  ID(on)  Drain Current “On”  ‐5.0  ‐‐  ‐30  mA  gfs  Forward Transconductance  2000  ‐‐  4000  µS  gos  Output Admittance  ‐‐  ‐‐  250  Ciss   Input Capacitance–Output shorted  ‐‐  ‐‐  2.5      3 pF  VDS = ‐15V,    ID = ‐10mA ,   f = 1MHz   Crss  Reverse Transfer Capacitance  ‐‐  ‐‐  0.7  Coss  Output Capacitance–Input Shorted  ‐‐  ‐‐  3.0  SWITCHING CHARACTERISTICS  ‐ TA = 25°C  and  VBS = 0 unless otherwise noted                                                              TIMING WAVEFORMS  SYMBOL  CHARACTERISTIC  MAX  UNITS  CONDITIONS  td(on)  Turn On Delay Time  12    VDD = ‐15V  ns  ID(on) = ‐10mA       tr  Turn On Rise Time  24  3 RG = RL = 1.4KΩ   toff  Turn Off Time  50                                        SWITCHING TEST CIRCUIT      Click To Buy Available Packages: 3N164 in TO-72 3N164 in bare die. TO-72 (Bottom View) Note 1 ‐ Absolute maximum ratings are limiting values above which 3N164 serviceability may be impaired.  Note 2 – Device must not be tested at ±125V more than once or longer than 300ms.  Note 3 – For design reference only, not 100% tested Micross Components Europe Tel: +44 1603 788967 Email: chipcomponents@micross.com Web: http://www.micross.com/distribution Please contact Micross for full package and die dimensions Information furnished by Linear Integrated Systems and Micross Components is believed to be accurate and reliable. However, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Linear Integrated Systems. Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603788920, Email: chipcomponents@micross.com Web: www.micross.com/distribution.aspx