TAV2-14LN+

Ultra Low Noise, Medium Current E-PHEMT Transistor 50Ω TAV2-14LN+ 0.05 to 10 GHz The Big Deal • Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V • High Gain, 16.4 dB typ. at 6 GHz, 4V • High OIP3, +30.9 dBm typ. at 6 GHz, 4V • High P1dB, 18.8 dBm typ. at 6 GHz, 4V 2mm x 2mm Product Overview Mini-Circuits’ TAV2-14LN+ is a MMIC E-PHEMT* transistor with an operating frequency range from 0.05 to 10 GHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications systems. Manufactured using highly repeatable E-PHEMT technology, the unit comes housed in a tiny 2x2mm MCLP package. This model requires external biasing and matching. Key Features Feature Advantages Wideband, 0.05 to 10 GHz Usable to 12 GHz A single device covers many wireless communications bands including cellular, ISM, GSM, WCDMA, WiMax, WLAN, 5G and more. High IP3 vs. DC power consumption • +30.9 dBm at 6 GHz, 4V • +33.2 dBm at 12 GHz, 4V The TAV2-14LN+ matches industry leading IP3 performance relative to device size and power consumption. Enhanced linearity over a broad frequency range makes the device ideal for use in: • Driver amplifiers for complex waveform up converter paths • Drivers in linearized transmit systems Combines high gain (16.4 dB) with very low Noise Figure (0.7 dB) The unique combination of high gain and low Noise Figure results in lower overall system noise. 2 x 2mm 6-lead MCLP package Tiny footprint saves space in dense layouts while providing low inductance, repeatable transitions, and excellent thermal contact to the PCB. * Enhancement mode Pseudomorphic High Electron Mobility Transistor. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 1 of 5 Ultra Low Noise, Medium Current E-PHEMT Transistor 50Ω TAV2-14LN+ 0.05 to 10 GHz Product Features • Low Noise Figure, 0.6 dB typ. at 6 GHz, 2V, • Gain, 16.4 dB typ. at 6 GHz, 4V • High Output IP3, +30.9 dBm at 6 GHz, 4V • Output Power at 1dB comp., +18.8 dBm at 6 GHz, 4V • External biasing and matching required • Usable to 12 GHz Generic photo used for illustration purposes only CASE STYLE: MC1630-1 Typical Applications +RoHS Compliant The +Suffix identifies RoHS Compliance. See our web site for RoHS Compliance methodologies and qualifications • 5G • Cellular • ISM • GSM • WCDMA • WiMax • WLAN • UNII and HIPERLAN General Description Mini-Circuits’ TAV2-14LN+ is a MMIC E-PHEMT* transistor with an operating frequency range from 0.05 to 10 GHz. This model combines high gain with extremely low noise figure, resulting in lower overall system noise. Low NF and IP3 performance make it an ideal choice for sensitive receivers in communications systems. Manufactured using highly repeatable E-PHEMT technology, the unit comes housed in a tiny 2x2mm MCLP package. This model requires external biasing and matching. simplified schematic and pin description DRAIN GATE SOURCE Function Pin Number Description RF-IN 2 Gate used for RF input RF-OUT 5 Drain used for RF output GND 1,3,4,6 & Paddle Source terminal, normally connected to ground. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com REV. OR ECO-001966 TAV2-14LN+ GY/RS/CP 200227 Page 2 of 5 TAV2-14LN+ E-PHEMT Transistor Electrical Specifications at TAMB=25°C Symbol Parameter Condition Min. Typ. Max. Units DC Specifications VTH Threshold Voltage VDS=4V, IDS=4 mA IDSS Saturated Drain Current VDS=4V, VGS=0 V — 0.37 2.0 — µA V GM Transconductance VDS =4V, Gm =∆IDS/∆VGS, ∆VGS = VGS2-VGS1, VGS2=0.7V, VGS1=0.6V ∆IDS =(IDS at VGS2)-(IDS at VGS1) — 192 — mS IGSS Gate leakage Current VGD=VGS=-3V — 1.0 µA RF & DC Specifications, Z0=50 Ohms Parameter Gain Input Return Loss Output Return Loss P1dB3 OIP3 Pout=5dBm/Tone Noise Figure VDS = 4V1, IDS = 40mA Condition (GHz) VDS = 2V1 IDS = 20mA VS = 5V2 VS = 3V2 Typ. Typ. Typ. Min. Typ. Max. 0.05 21 23.4 25.7 22 — — 6 14.7 16.4 18 15.9 12.7 11.9 8 12.5 13.9 15.3 13.3 10.1 9.4 10 10.8 11.8 13.2 11.3 9.8 9.1 12 — 10.2 — 10 — — 0.05 — — — — — — 6 7 6 11 10 8 7 6 15 12 10 7 7 8 7 12 8 7 — — 0.05 5 5 — — 6 13 13 7 7 8 20 17 8 9 10 20 17 7 7 — 12 19 16 — 0.05 17.7 13.3 — — 6 18.8 13.1 12.6 8.5 8 19.1 13.4 11.2 7.4 10 19.4 13.5 13.4 10.2 — 12 19.1 13 — 0.05 27.1 22.8 — — 6 30.9 24.9 25.9 20.8 8 31.6 25.9 25.4 18.6 10 33.0 28.5 27.0 21.8 — 12 33.2 29.0 — 0.05 2.5 0.7 — — 6 0.7 0.6 0.8 0.7 8 0.7 0.6 1.0 0.8 10 0.8 0.7 1.0 0.7 Units dB dB dB dBm dBm dB 12 1.0 0.8 — — IDS DC 40 20 54 23 mA VGS DC 0.58 — — V 0.44 0.65 0.72 1. Measured in test board TB-TAV2-14LN+. See Fig 1. 2. Measured in eval board TB-TAV2-14LNE+ (designed for 6-10 GHz). See Fig. 2. 3. Drain current bias allowed to increase during compression measurement. Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 3 of 5 TAV2-14LN+ E-PHEMT Transistor Absolute Maximum Ratings4 Symbol Parameter Max. Units IGS PDISS Drain-Source Voltage Gate-Source Voltage at VDS=4V Drain Current at VDS=4V Gate Current Total Dissipated Power 5 -5 &1 65 15 325 V V mA µA mW PIN6 RF Input Power 18 (5-minute max.) 15 (continuous) dBm TCH Channel Temperature 150 °C TOP Operating Temperature -40 to 85 °C TSTD Storage Temperature -65 to 150 °C θjc Thermal Resistance 170 °C/W VDS5 VGS5 IDS5 4. Operation of this device above any one of these parameters may cause permanent damage. 5. Assumes DC quiescent conditions. 6. IGS is limited to 15µA during test. Characterization Test Circuit Fig 1. Block Diagram of Test Circuit used for characterization. (DUT is soldered on Mini-Circuits Test Board TB-TAV2-14LN+) Gain, Output power at 1dB compression (P1dB), Noise Figure and output IP3 (OIP3) are measured using Agilent’s Microwave Network Analyzer N5242A PNA-X. Conditions: 1. Drain voltage (with reference to source, VDS)= 2V&4V as shown. 2. Gate Voltage (with reference to source, VGS) is set to obtain desired Drain-Source current (IDS) as shown in graphs or specification table. 3. Gain: Pin= -25dBm 4. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 5 dBm/tone at output. 5. No external matching components used. Application Test Circuit Fig 2. Block Diagram of Test Circuit used for characterization. (DUT is soldered on Mini-Circuits Application test board TB-TAV2-14LNE+) Gain, Return loss, Output power at1dB compression (P1dB), output IP3 (OIP3) and noise figure measured using Agilent’s microwave network analyzer N5242A PNA-X. Conditions: 1. Supply voltage, VS=3V&5V Notes 2. Gain and Return Pin= -25dBm A. Performance and quality attributesloss: and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical3.specifications performance contained in this specification are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. Output IP3and (OIP3): Two data Tones spaced 1 MHz apart,document 5dBm/ tone at output. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 4 of 5 TAV2-14LN+ E-PHEMT Transistor Product Marking MCL T214 Marking may contain other features or characters for internal lot control Additional Detailed Technical Information additional information is available on our dash board. To access this information click here Data Table Performance Data Swept Graphs S-Parameter (S2P Files) Data Set (.zip file) Case Style MC1630-1 Plastic package, exposed paddle, lead finish: Matte-Tin Tape & Reel F55 Standard quantities available on reel 7” reels with 20, 50, 100, 200, 500 or 1K devices Suggested Layout for PCB Design PL-659 Evaluation Board TB-TAV2-14LN+ & TB-TAV2-14LNE+ Environmental Ratings ENV08T1 ESD Rating Human Body Model (HBM): Class 0 (50V to 250V) in accordance with ANSI/ESD STM 5.1 - 2001 MSL Test Flow Chart Start Visual Inspection Electrical Test SAM Analysis Reflow 3 cycles, 260°C Soak 85°C/85RH 168 hours Bake at 125°C, 24 hours Visual Inspection Electrical Test SAM Analysis Finish Additional Notes A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits Notes contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document. please visit B. Electrical specifications and Mini-Circuits’ performance datawebsite containedatinwww.minicircuits.com/MCLStore/terms.jsp this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp Mini-Circuits ® www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com Page 5 of 5