CM100TU-12H

MITSUBISHI IGBT MODULES CM100TU-12H HIGH POWER SWITCHING USE INSULATED TYPE A B F G E H E H G E R S(4 - Mounting Holes) K L GuP EuP D GvP EvP GwP EwP GuN EuN GvN EvN u v w K J E 5 - M4 NUTS TAB#110 t=0.5 H E J H E N C TC Measured Point TC Measured Point M GwN EwN P Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of six IGBTs in a three phase bridge configuration, with each transistor having a reverse-connected superfast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies P GuP EuP U GvP EvP V GwP EwP W GuN EuN N GvN EvN GwN EwN Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 4.02 3.15±0.01 3.58 2.91±0.01 0.43 0.79 0.39 0.75 0.79 Millimeters 102.0 80.0±0.25 91.0 74.0±0.25 11.0 20.0 10.0 19.1 20.0 Dimensions K L M N P Q R S Inches 0.05 0.74 1.55 0.12 0.32 1.02 0.47 0.22 Dia. Millimeters 1.25 18.7 39.3 3.05 8.1 26.0 11.85 5.5 Dia. Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100TU-12H is a 600V (VCES), 100 Ampere SixIGBT Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 12 Sep.1998 MITSUBISHI IGBT MODULES CM100TU-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150°C) Mounting Torque, M4 Main Terminal Mounting Torque, M5 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM100TU-12H -40 to 150 -40 to 125 600 ±20 100 200* 100 200* 400 1.3 ~ 1.7 2.5 ~ 3.5 570 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V, Tj = 25°C IC = 100A, VGE = 15V, Tj = 125°C Total Gate Charge Emitter-Collector Voltage* VCC = 300V, IC = 100A, VGE = 15V Min. – – 4.5 – – – Typ. – – 6 2.4 2.6 200 – Max. 1 0.5 7.5 3.0 – – 2.6 Units mA µA Volts Volts Volts nC Volts VEC IE = 100A, VGE = 0V – * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 100A, VGE1 = VGE2 = 15V, RG = 6.3Ω, Resistive Load Switching Operation IE = 100A, diE/dt = -200A/µs IE = 100A, diE/dt = -200A/µs VCE = 10V, VGE = 0V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 0.24 Max. 8.8 4.8 1.3 100 250 200 300 160 – Units nF nF nF ns ns ns ns µC µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/6 Module Per Free-Wheel Diode 1/6 Module Per Module, Thermal Grease Applied Min. – – – Typ. – – 0.018 Max. 0.31 0.7 – Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM100TU-12H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT, IC, (AMPERES) 160 120 VGE = 20V 12 160 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 15 14 200 13 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 4 3 2 1 120 11 80 10 80 40 0 40 9 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 40 80 120 160 200 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C 101 Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) Cies 8 6 4 2 EMITTER CURRENT, IE, (AMPERES) IC = 200A 102 100 Coes IC = 100A Cres 101 10-1 VGE = 0V IC = 40A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 0.6 1.0 1.4 1.8 2.2 2.6 3.0 10-2 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -200A/µsec Tj = 25°C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, trr, (ns) 103 VCC = 300V VGE = ±15V RG = 6.3 Ω Tj = 125°C td(off) tf 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 100A 16 12 8 4 SWITCHING TIME, (ns) VCC = 200V VCC = 300V 103 102 trr Irr 101 102 td(on) tr 101 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 75 150 225 300 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM100TU-12H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth • (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.31°C/W 100 Single Pulse TC = 25°C Per Unit Base = Rth(j-c) = 0.7°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998