CM1200HG-66H

MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1200HG-66H ● IC ............................................................... 1200 A ● VCES ...................................................... 3300 V ● High Insulated Type ● 1-element in a Pack ● AISiC Baseplate APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 190 ±0.5 57 ±0.25 57 ±0.25 57 ±0.25 5-M8 NUTS 17 ±0.1 (6) C C 124 ±0.25 140 ±0.5 44 ±0.3 (4) C (2) C 6 4 2 5 3 1 G E E (5) E (3) E (1) E G C 9 ±0.1 CIRCUIT DIAGRAM 3-M4 NUTS 14 ±0.3 61.2 ±0.5 screwing depth min. 7.7 59.2 ±0.5 61.2 ±0.5 12 ±0.3 8-φ7 MOUNTING HOLES screwing depth min. 16.5 18 ±0.3 41 ±0.5 22 ±0.3 +1.0 0 HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules 1 40.4 ±0.3 5 ±0.15 LABEL 38 +1.0 0 48 May 2009 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE IEM Pc Viso Ve Tj Top Tstg tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current (Note 2) Conditions VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C DC, Tc = 80°C Pulse DC Pulse Tc = 25°C, IGBT part RMS, sinusoidal, f = 60Hz, t = 1 min. RMS, sinusoidal, f = 60Hz, QPD ≤ 10 pC Ratings 3300 ± 20 1200 2400 1200 2400 13800 10200 5100 –40 ~ +150 –40 ~ +125 –40 ~ +125 10 Unit V V A A A A W V V °C °C °C µs (Note 1) (Note 1) Maximum power dissipation (Note 3) Isolation voltage Partial discharge extinction voltage Junction temperature Operating temperature Storage temperature Maximum short circuit pulse width VCC = 2200V, VCE ≤ VCES, VGE = 15V, Tj = 125°C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES Cies Coes Cres Qg VCE(sat) td(on) tr Eon(10%) td(off) tf Eoff(10%) VEC trr Qrr Erec(10%) Item Collector cutoff current Gate-emitter threshold voltage Gate leakage current Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Collector-emitter saturation voltage Turn-on delay time Turn-on rise time Turn-on switching energy (Note 5) Turn-off delay time Turn-off fall time Turn-off switching energy (Note 5) Emitter-collector voltage (Note 2) Reverse recovery time (Note 2) Reverse recovery charge (Note 2) Reverse recovery energy (Note 2), (Note 5) VCE = VCES, VGE = 0V VCE = 10 V, IC = 120 mA, Tj = 25°C VGE = VGES, VCE = 0V, Tj = 25°C VCE = 10 V, VGE = 0 V, f = 100 kHz, Tj = 25°C VCC = 1650 V, IC = 1200 A, VGE = ±15 V, Tj = 25°C IC = 1200 A (Note 4) Tj = 25°C VGE = 15 V Tj = 125°C VCC = 1650 V, IC = 1200 A, VGE = ±15 V RG = 1.6 Ω, Tj = 125°C, Ls = 100 nH Inductive load VCC = 1650 V, IC = 1200 A, VGE = ±15 V RG = 1.6 Ω, Tj = 125°C, Ls = 100 nH Inductive load IE = 1200 A VGE = 0 V (Note 4) Tj = 25°C Tj = 125°C Conditions Tj = 25°C Tj = 125°C Min — — 5.0 — — — — — — — — — — — — — — — — VCC = 1650 V, IE = 1200 A, VGE = ±15 V RG = 1.6 Ω, Tj = 125°C, Ls = 100 nH Inductive load — — Limits Typ — 24 6.0 — 180 18 5.4 15 3.30 3.60 — — 1.60 — — 1.55 2.80 2.70 — 800 0.90 Max 15 60 7.0 0.5 — — — — — — 1.60 1.00 — 2.50 1.00 — — — 1.40 — — Unit mA V µA nF nF nF µC V µs µs J/P µs µs J/P V µs µC J/P HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 2 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, λgrease = 1W/m·K, D(c-f) = 100 µm Min — — — Limits Typ — — 6.0 Max 9.0 17.5 — Unit K/kW K/kW K/kW MECHANICAL CHARACTERISTICS Symbol Mt Ms Mt m CTI da ds LP CE RCC’+EE’ Item Conditions M8: Main terminals screw M6: Mounting screw M4: Auxiliary terminals screw Min 7.0 3.0 1.0 — 600 26 56 — — Limits Typ — — — 1.35 — — — 17 0.14 Max 15.0 6.0 3.0 — — — — — — Unit N·m N·m N·m kg — mm mm nH mΩ Mounting torque Mass Comparative tracking index Clearance Creepage distance Internal inductance Internal lead resistance Tc = 25°C Note 1. Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125°C). 2. The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 3. Junction temperature (Tj) should not exceed Tjmax rating (150°C). 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. 5. Eon(10%) / Eoff(10%) / Erec(10%) are the integral of 0.1VCE x 0.1IC x dt. HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 3 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 2400 Tj = 125°C VGE = 20V VGE = 15V 1600 VGE = 12V VGE = 10V 1200 VGE = 8V 800 COLLECTOR CURRENT (A) TRANSFER CHARACTERISTICS (TYPICAL) 2400 VCE = 20V 2000 2000 COLLECTOR CURRENT (A) 1600 1200 800 400 400 Tj = 25°C Tj = 125°C 0 0 1 2 3 4 5 6 0 0 2 4 6 8 10 12 COLLECTOR-EMITTER VOLTAGE (V) GATE-EMITTER VOLTAGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 2400 VGE = 15V 2000 COLLECTOR CURRENT (A) EMITTER CURRENT (A) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 2400 2000 1600 1600 1200 1200 800 800 400 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 6 400 Tj = 25°C Tj = 125°C 0 1 2 3 4 5 6 0 0 COLLECTOR-EMITTER SATURATION VOLTAGE (V) EMITTER-COLLECTOR VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 4 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCE = 1650V, IC = 1200A Tj = 25°C 15 3 2 GATE-EMITTER VOLTAGE (V) Cies 10 CAPACITANCE (nF) 102 7 5 3 2 5 0 101 7 5 3 2 Coes -5 Cres VGE = 0V, Tj = 25°C f = 100kHz 23 5 7 100 23 5 7 101 23 5 7 102 -10 100 -1 10 -15 0 5000 10000 15000 20000 COLLECTOR-EMITTER VOLTAGE (V) GATE CHARGE (µC) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3 VCC = 1650V, VGE = ±15V RG = 1.6Ω, Tj = 125°C Inductive load Eon 5 6 HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1650V, IC = 1200A VGE = ±15V, Tj = 125°C Inductive load 2.5 Eon SWITCHING ENERGIES (J/P) 2 SWITCHING ENERGIES (J/P) Eoff 4 1.5 3 Eoff 2 1 Erec 0.5 1 Erec 0 0 400 800 1200 1600 2000 2400 0 0 5 10 15 20 COLLECTOR CURRENT (A) GATE RESISTOR (Ω) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 5 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 101 7 5 4 FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102 7 5 REVERSE RECOVERY TIME (µs) 3 2 3 SWITCHING TIMES (µs) 3 2 td(off) lrr 2 101 7 5 3 2 103 7 5 3 2 td(on) 100 7 5 4 3 2 tf 100 7 5 3 102 trr 7 5 3 2 7 103 7 104 tr 10-1 2 10 7 103 7 104 2 2 3 45 2 3 45 10-1 2 10 101 2 3 45 2 3 45 COLLECTOR CURRENT (A) EMITTER CURRENT (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS NORMALIZED TRANSIENT THERMAL IMPEDANCE 1.2 Rth(j–c)Q = 9.0K/kW Rth(j–c)R = 17.5K/kW 1.0 0.8 Z (t) = th( j –c ) Σ R 1–exp i i=1 n – t ti   0.6 Ri [ K/kW] τ i [sec] 1 0.0059 0.0002 2 0.0978 0.0074 3 0.6571 0.0732 4 0.2392 0.4488 0.4 0.2 0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 6 REVERSE RECOVERY CURRENT (A) VCC = 1650V, VGE = ±15V RG = 1.6Ω, Tj = 125°C Inductive load VCC = 1650V, VGE = ±15V RG = 1.6Ω, Tj = 125°C Inductive load 104 7 5   MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE REVERSE BIAS SAFE OPERATING AREA (RBSOA) 3000 VCC ≤ 2200V, VGE = ±15V Tj = 125°C, RG ≥ 1.6Ω 2500 COLLECTOR CURRENT (A) COLLECTOR CURRENT (A) SHORT CIRCUIT SAFE OPERATING AREA (SCSOA) 20000 VCC ≤ 2200V, VGE = ±15V Tj = 125°C, RG ≥ 1.6Ω 15000 2000 1500 10000 1000 5000 500 0 0 1000 2000 3000 4000 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) COLLECTOR-EMITTER VOLTAGE (V) FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) 3000 VCC ≤ 2200V, di/dt ≤ 5400A/µs Tj = 125°C REVERSE RECOVERY CURRENT (A) 2500 2000 1500 1000 500 0 0 1000 2000 3000 4000 COLLECTOR-EMITTER VOLTAGE (V) HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 7