CM150DY-24H

MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE A B H E E H S C2E1 E2 C1 E2 G2 C K G1 E1 G S L R - M5 THD (3 TYP.) P - DIA. (2 TYP.) J J J TAB#110 t=0.5 N N M D F Q Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM150DY-24H is a 1200V (VCES), 150 Ampere Dual IGBT Module. Type CM Current Rating Amperes 150 VCES Volts (x 50) 24 G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.70 3.150±0.01 1.89 1.18 Max. 0.90 0.83 0.71 0.67 0.63 Millimeters 94.0 80.0±0.25 48.0 30.0 Max. 23.0 21.2 18.0 17.0 16.0 Dimensions K L M N P Q R S Inches 0.51 0.47 0.30 0.28 0.256 Dia. 0.31 M5 Metric 0.16 Millimeters 13.0 12.0 7.5 7.0 Dia. 6.5 8.0 M5 4.0 Sep.1998 MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) *Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso CM150DY-24H –40 to 150 –40 to 125 1200 ±20 150 300* 150 300* 1100 1.47 ~ 1.96 1.96 ~ 2.94 270 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m Grams Vrms Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V IC = 150A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 600V, IC = 150A, VGE = 15V IE = 150A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.5 2.25 750 – Max. 1.0 0.5 7.5 3.4** – – 3.5 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 150A, diE/dt = –300A/µs IE = 150A, diE/dt = –300A/µs VCC = 600V, IC = 150A, VGE1 = VGE2 = 15V, RG = 2.1Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 1.11 Max. 30 10.5 6 250 350 300 350 250 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.11 0.24 0.065 Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 300 COLLECTOR CURRENT, IC, (AMPERES) 300 250 200 150 100 50 0 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC 15 5 VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C 12 250 200 150 100 50 0 VGE = 20V 11 4 3 10 9 7 8 2 1 0 0 50 100 150 200 250 300 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF) 7 5 3 2 Tj = 25°C 102 8 IC = 300A Cies 101 6 IC = 150A 102 7 5 3 2 Coes 4 100 VGE = 0V Cres 2 IC = 60A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 1.0 1.5 2.0 2.5 3.0 3.5 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, t rr, (ns) 103 102 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 20 IC = 150A 7 5 SWITCHING TIME, (ns) tf td(off) td(on) tr 16 3 2 VCC = 400V VCC = 600V 102 7 5 3 2 102 Irr t rr 12 101 8 101 1 10 VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C 2 3 5 7 102 2 3 5 7 103 COLLECTOR CURRENT, IC, (AMPERES) di/dt = -300A/µsec Tj = 25°C 4 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 200 400 600 800 1000 1200 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM150DY-24H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.11°C/W 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.24°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998