MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE INSULATED TYPE
A B H E E H S
C2E1 E2 C1 E2 G2
C
K
G1 E1
G
S L R - M5 THD (3 TYP.) P - DIA. (2 TYP.) J J J
TAB#110 t=0.5
N
N
M D F
Q
Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM150DY-24H is a 1200V (VCES), 150 Ampere Dual IGBT Module.
Type CM Current Rating Amperes 150 VCES Volts (x 50) 24
G2 E2
C2E1
E2
C1
E1 G1
Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 3.70 3.150±0.01 1.89 1.18 Max. 0.90 0.83 0.71 0.67 0.63 Millimeters 94.0 80.0±0.25 48.0 30.0 Max. 23.0 21.2 18.0 17.0 16.0 Dimensions K L M N P Q R S Inches 0.51 0.47 0.30 0.28 0.256 Dia. 0.31 M5 Metric 0.16 Millimeters 13.0 12.0 7.5 7.0 Dia. 6.5 8.0 M5 4.0
Sep.1998
MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25°C) Peak Collector Current Emitter Current** (TC = 25°C) Peak Emitter Current** Maximum Collector Dissipation (TC = 25°C, Tj ≤ 150°C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
*Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – Viso
CM150DY-24H –40 to 150 –40 to 125 1200 ±20 150 300* 150 300* 1100 1.47 ~ 1.96 1.96 ~ 2.94 270 2500
Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m Grams Vrms
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 15mA, VCE = 10V IC = 150A, VGE = 15V IC = 150A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 600V, IC = 150A, VGE = 15V IE = 150A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.5 2.25 750 – Max. 1.0 0.5 7.5 3.4** – – 3.5 Units mA µA Volts Volts Volts nC Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 150A, diE/dt = –300A/µs IE = 150A, diE/dt = –300A/µs VCC = 600V, IC = 150A, VGE1 = VGE2 = 15V, RG = 2.1Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 1.11 Max. 30 10.5 6 250 350 300 350 250 – Units nF nF nF ns ns ns ns ns µC
Diode Reverse Recovery Time Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.11 0.24 0.065 Units °C/W °C/W °C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE INSULATED TYPE
OUTPUT CHARACTERISTICS (TYPICAL)
TRANSFER CHARACTERISTICS (TYPICAL)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
300
COLLECTOR CURRENT, IC, (AMPERES)
300 250 200 150 100 50 0 0 2 4 6 8 10 0 4 8 12 16 20
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES)
Tj = 25oC
15
5
VCE = 10V Tj = 25°C Tj = 125°C VGE = 15V Tj = 25°C Tj = 125°C
12
250 200 150 100 50 0
VGE = 20V 11
4
3
10 9 7 8
2
1
0 0 50 100 150 200 250 300
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL)
CAPACITANCE VS. VCE (TYPICAL)
10
COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS)
103
Tj = 25°C
EMITTER CURRENT, IE, (AMPERES) CAPACITANCE, Cies, Coes, Cres, (nF)
7 5 3 2
Tj = 25°C
102
8
IC = 300A
Cies
101
6
IC = 150A
102
7 5 3 2
Coes
4
100
VGE = 0V Cres
2
IC = 60A
0 0 4 8 12 16 20
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
101 1.0
1.5
2.0
2.5
3.0
3.5
10-1 10-1
100
101
102
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CHARACTERISTICS (TYPICAL)
REVERSE RECOVERY CURRENT, Irr, (AMPERES)
GATE CHARGE, VGE
103
REVERSE RECOVERY TIME, t rr, (ns)
103
102
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
20
IC = 150A
7 5
SWITCHING TIME, (ns)
tf td(off) td(on) tr
16
3 2
VCC = 400V VCC = 600V
102
7 5 3 2
102
Irr t rr
12
101
8
101 1 10
VCC = 600V VGE = ±15V RG = 2.1Ω Tj = 125°C
2 3 5 7 102 2 3 5 7 103
COLLECTOR CURRENT, IC, (AMPERES)
di/dt = -300A/µsec Tj = 25°C
4
101 101
102
EMITTER CURRENT, IE, (AMPERES)
100 103
0 0 200 400 600 800 1000 1200
GATE CHARGE, QG, (nC)
Sep.1998
MITSUBISHI IGBT MODULES
CM150DY-24H
HIGH POWER SWITCHING USE INSULATED TYPE
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE)
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100
101
10-3 101
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100
101
100
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.11°C/W
100
Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.24°C/W
10-1
10-1
10-1
10-1
10-2
10-2
10-2
10-2
10-3 10-5
TIME, (s)
10-4
10-3 10-3
10-3 10-5
TIME, (s)
10-4
10-3 10-3
Sep.1998