CM200DU-24NFH_09

MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE CM200DU-24NFH ¡IC ................................................................... 200A ¡VCES ......................................................... 1200V ¡Insulated Type ¡2-elements in a pack APPLICATION High frequency switching use (30kHz to 60kHz). Gradient amplifier, Induction heating, power supply, etc. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 (7.5) 14 93 ±0.25 14 TC measured point (7.5) 14 E2 G2 C2E1 E2 G2 E2 C1 6 48 ±0.25 (8.25) CM G1 E1 17.5 6 (18) CIRCUIT DIAGRAM 8.85 C2E1 E2 C1 25 3-M6 NUTS 4-φ6. 5 MOUNTING HOLES 25 21.5 2.5 25.7 4 0.5 2.8 7.5 8.5 0.5 0.5 0.5 18 7 18 7 18 +1.0 –0.5 29 22 LABEL (7) Feb. 2009 4 G1 E1 15 62 MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) PC’ (Note 3) Tj Tstg Viso — — — (Tj = 25°C, unless otherwise specified) Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight G-E Short C-E Short Operation Pulse Operation Pulse TC = 25°C TC’ = 25°C*4 Conditions (Note 2) (Note 2) (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value Ratings 1200 ±20 200 400 200 400 830 1300 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A A A W W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Rth(j-c’)R RG Parameter Collector cutoff current (Tj = 25°C, unless otherwise specified) Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 200A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE = ±15V RG = 1.6Ω, Inductive load IE = 200A IE = 200A, VGE = 0V IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound Applied*2 (1/2 module) IGBT part (1/2 module) FWDi part (1/2 module) Tj = 25°C Tj = 125°C Min. — 4.5 — — — — — — — — — — — — — — — — — — — 1.6 Limits Typ. — 6 — 5.0 5.0 — — — 900 — — — — — 7.5 — — — 0.04 — — — Max. 1 7.5 0.7 6.5 — 32 2.7 0.6 — 300 80 500 150 250 — 3.5 0.15 0.24 — 0.095*3 0.14*3 16 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V K/W K/W K/W K/W K/W Ω Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance*4 External gate resistance *1 : Case temperature (TC) measured point is shown in page OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. *4 : Case temperature (TC’) measured point is just under the chips. Note 1. IE, IEM, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. No short circuit capability is designed. Feb. 2009 2 MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 400 COLLECTOR CURRENT IC (A) Tj = 25°C 350 300 250 200 150 100 50 0 0 2 4 VGE=20 (V) 14 13 15 12 VCE = 10V 350 300 250 200 150 100 50 0 0 5 10 Tj = 25°C Tj = 125°C 15 20 11 10 9 8 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 9 VGE = 15V 8 Tj = 25°C Tj = 125°C 7 6 5 4 3 2 1 0 0 50 100 150 200 250 300 350 400 COLLECTOR CURRENT IC (A) 10 Tj = 25°C IC = 400A 8 6 IC = 200A 4 IC = 80A 2 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 125°C Tj = 25°C Cies 101 7 5 3 2 102 7 5 3 2 Coes 100 7 5 3 2 Cres 101 0 1 2 3 4 5 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 EMITTER-COLLECTOR VOLTAGE VEC (V) 3 MITSUBISHI IGBT MODULES CM200DU-24NFH HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIME (ns) 3 2 5 3 2 5 3 102 7 5 3 2 td(off) td(on) tr tf Conditions: VCC = 600V VGE = ±15V RG = 1.6Ω Tj = 125°C Inductive load 23 5 7 103 Irr 2 102 7 5 3 2 101 7 5 3 2 100 1 10 2 3 5 7 102 101 1 10 2 3 5 7 102 102 trr 7 Conditions: 5 VCC = 600V VGE = ±15V 3 RG = 1.6Ω 2 Tj = 25°C Inductive load 101 23 5 7 103 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–1 7 5 3 2 10–1 7 5 3 2 10–1 7 5 3 2 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 10–2 7 5 3 Per unit base = 2 10–2 7 5 3 2 Rth(j–c) = 0.15K/W 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 Rth(j–c) = 0.24K/W 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 200A VCC = 400V VCC = 600V 15 10 5 0 0 200 400 600 800 1000 1200 1400 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 103 Tj = 25°C 7 7