CM300DU-24H

MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE CM300DU-24H ● IC ................................................................... 300A ● VCES ....................................................... 1200V ● Insulated Type ● 2-elements in a pack ● UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, NC machine, AC-Drive control, Servo, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm TC measured point 110 E2 G2 6 C2E1 E2 62 ±0.25 C1 15 (8.25) 80 G1 E1 CM (18.5) CIRCUIT DIAGRAM C2E1 E2 C1 4-φ6.5 MOUTING HOLES 3-M6 NUTS 25 93 18 14 7 ±0.25 25 21.5 2.5 18.25 18 14 7 18 14 4 2.8 0.5 0.5 0.5 0.5 7.5 29 +1.0 –0.5 21 LABEL 8.5 G1 E1 6 E2 G2 Feb. 2009 1 4 MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE (Tj = 25°C, unless otherwise specified) MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1200 ±20 300 600 300 600 1130 –40 ~ +150 –40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 580 Unit V V A A A A W °C °C Vrms N·m N·m g (Note 1) (Note 1) — — Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M6 screw Mounting M6 screw Typical value ELECTRICAL CHARACTERISTICS Symbol ICES Item (Tj = 25°C, unless otherwise specified) Test Conditions VCE = VCES, VGE = 0V IC = 30mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 300A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 300A, VGE = 15V VCC = 600V, IC = 300A VGE = ±15V RG = 1.0Ω Resistive load IE = 300A, VGE = 0V IE = 300A, die / dt = –600A / µs Junction to case, IGBT part (Per 1/2 module) Junction to case, FWDi part (Per 1/2 module) Case to heat sink, conductive grease applied (Per 1/2 module) (Note 6) (Note 4) Tj = 25°C Tj = 125°C Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage t rr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 6 — 2.9 2.85 — — — 1125 — — — — — — 1.65 — — 0.02 Max 1 7.5 0.5 3.7 — 45 15 9 — 200 300 350 350 3.2 300 — 0.11 0.18 — Unit mA V µA V nF nF nF nC ns ns ns ns V ns µC K/W K/W K/W Note 1. 2. 3. 4. 5. 6. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 600 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 600 COLLECTOR CURRENT IC (A) VGE = 20 (V) 15 12 VCE = 10V 500 400 300 200 100 0 500 Tj = 25°C 400 300 10 200 9 100 8 0 0 2 4 6 8 10 11 Tj = 25°C Tj = 125°C 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 VGE = 15V Tj = 25°C Tj = 125°C 4 10 Tj = 25°C 8 3 6 IC = 600A IC = 300A 2 IC = 120A 2 4 1 0 0 100 200 300 400 500 600 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25°C VGE = 0V Cies 101 7 5 3 2 102 7 5 3 2 Coes Cres 100 7 5 3 2 101 1.0 1.5 2.0 2.5 3.0 3.5 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 3 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI IGBT MODULES CM300DU-24H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 SWITCHING TIMES (ns) 3 2 tf td(off) td(on) 5 3 2 5 3 2 Irr trr 102 7 5 3 2 tr 102 7 5 3 2 101 7 5 3 2 101 1 10 Tj = 125°C VCC = 600V VGE = ±15V RG = 1.0Ω 2 3 5 7 102 2 3 5 7 103 101 1 10 2 3 5 7 102 2 3 5 7 103 100 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25°C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j ––c) = 0.14°C/ W Per unit base = Rth(j c) = 0.11K/W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) 100 Per unit base = Rth(j ––c) = 0.24°C/ W Per unit base = Rth(j c) = 0.18K/W 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–1 10–1 7 5 3 2 7 5 3 2 10–2 10–2 10–2 10–2 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 300A VCC = 400V VCC = 600V 10 15 5 0 0 400 800 1200 1600 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 – di /dt = 600A /µs 7 7 Tj = 25°C