CM300DU-34KA_09

MITSUBISHI IGBT MODULES CM300DU-34KA HIGH POWER SWITCHING USE CM300DU-34KA ● IC ................................................................... 300A ● VCES .......................................................... 1700V ● Insulated Type ● 2-elements in a pack APPLICATION General purpose inverters & Servo controlers, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 140 130 110 ±0.25 36 43.8 10 13.8 11.5 10 (15) 9 G2 20.4 E2 (26) (26) (26) Tc measured point 110 ±0.25 C2E1 14.5 E1 3-M8 NUTS 65 4-M4 NUTS G1 14.5 130 20 40 E2 C1 (15) Tc measured point 4-φ6.5MOUNTING HOLES 24.5 -0.5 35 -0.5 +1 +1 C2E1 E2 C1 CIRCUIT DIAGRAM G1 E1 8 E2 G2 Feb. 2009 MITSUBISHI IGBT MODULES CM300DU-34KA HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso — — Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Conditions Ratings 1700 ±20 300 600 300 600 1500 –40 ~ +150 –40 ~ +125 3500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 Unit V V A A A A W °C °C Vrms N•m g (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M8 screw Mounting M6 screw G(E) Terminal M4 screw Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance Test conditions VCE = VCES, VGE = 0V IC = 30mA, VCE = 10V ±VGE = VGES, VCE = 0V IC = 300A, VGE = 15V VCE = 10V VGE = 0V VCC = 1000V, IC = 300A, VGE = 15V VCC = 1000V, IC = 300A VGE = ±15V RG = 3.1Ω, Inductive load IE = 300A IE = 300A, VGE = 0V, Tj = 25°C IE = 300A, VGE = 0V, Tj = 125°C IGBT part (1/2 module) FWDi part (1/2 module) Case to heat sink, Thermal compound applied*2 (1/2 module) Case temperature measured point is just under the chips Tj = 25°C Tj = 125°C Min. — 4 — — — — — — — — — — — — — — — — — — — Limits Typ. — 5.5 — 3.2 3.8 — — — 1350 — — — — — 11.2 — 2.2 — — 0.010 — Max. 1 7 0.5 4.0 — 42 7.2 2.3 — 800 300 1000 800 600 — 4.6 — 0.083 0.13 — 0.035*3 Unit mA V µA V nF nF nF nC ns ns ns ns ns µC V V K/W K/W K/W K/W Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM300DU-34KA HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 600 TRANSFER CHARACTERISTICS (TYPICAL) 11 600 VCE = 10V Tj = 25°C 500 Tj = 125°C 400 300 200 100 0 COLLECTOR CURRENT IC (A) Tj = 25°C VGE = 20V 15 12 500 400 300 14 10 9 200 100 0 8 COLLECTOR CURRENT (A) 0 2 4 6 8 10 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) VGE = 15V Tj = 25°C 5 Tj = 125°C 4 3 2 1 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 6 10 Tj = 25°C 8 6 IC = 600A 4 IC = 300A IC = 120A 2 0 100 200 300 400 500 600 0 6 8 10 12 14 16 18 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 5 3 2 CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) 102 CAPACITANCE Cies, Coes, Cres (nF) Tj = 25°C 7 5 3 2 EMITTER CURRENT IE (A) Cies 101 7 5 3 2 102 7 5 3 2 Coes Cres 100 7 5 3 2 101 1 2 3 4 5 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) Feb. 2009 3 MITSUBISHI IGBT MODULES CM300DU-34KA HIGH POWER SWITCHING USE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 104 7 5 3 2 REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 7 5 3 2 SWITCHING TIMES (ns) tf td(off) td(on) 103 7 5 3 2 trr 102 7 5 3 2 Irr Conditions: VCC = 1000V VGE = ±15V RG = 3.1Ω Tj = 25°C Inductive load 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 tr 101 1 10 Conditions: VCC = 1000V VGE = ±15V RG = 3.1Ω Tj = 125°C Inductive load 3 5 7 102 2 3 5 7 103 2 101 1 10 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) (ratio) EMITTER CURRENT IE (A) GATE-EMITTER VOLTAGE VGE (V) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.083K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.13K/W 100 7 5 3 2 7 5 3 2 7 5 3 2 3 2 GATE CHARGE CHARACTERISTICS (TYPICAL) 20 IC = 300A 16 VCC = 800V VCC = 1000V 12 10–1 10–1 7 5 3 2 7 5 3 2 8 10–2 Single Pulse TC = 25°C 10–2 4 10–3 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) 0 0 400 800 1200 1600 2000 GATE CHARGE QG (nC) Feb. 2009 4