CM400HA-12H

MITSUBISHI IGBT MODULES CM400HA-12H HIGH POWER SWITCHING USE INSULATED TYPE A Q S M H N V–DIA.(4 TYP.) E E C D F CM GC G X–M4 THD. (2 TYP.) P B K R U K W–M6 THD. (2 TYP.) E J L Description: Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode High Frequency Operation Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM400HA12H is a 600V (VCES), 400 Ampere Single IGBT Module. Type CM Current Rating Amperes 400 VCES Volts (x 50) 12 T E E G C Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J K L Inches 4.21 3.661±0.01 2.44 1.89±0.01 1.42 Max. 1.34 1.18 1.14 0.98 Max. 0.94 0.93 Millimeters 107.0 93.0±0.25 62.0 48.0±0.25 36.0 Max. 34.0 30.0 29.0 25.0 Max. 24.0 23.5 Dimensions M N P Q R S T U V W X Inches 0.83 0.69 0.63 0.51 0.43 0.35 0.28 0.12 0.26 Dia. M6 Metric M4 Metric Millimeters 21.0 17.5 16.0 13.0 11.0 9.0 7.0 3.0 Dia. 6.5 M6 M4 Sep.1998 MITSUBISHI IGBT MODULES CM400HA-12H HIGH POWER SWITCHING USE INSULATED TYPE Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25°C) Peak Collector Current (Tj ≤ 150°C) Emitter Current** (Tc = 25°C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25°C) Mounting Torque, M6 Main Terminal Mounting Torque, M6 Mounting Mounting Torque, M4 Terminal Weight Isolation Voltage (Main Terminal to BAseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc – – – – Viso CM600HU-12H -40 to 150 -40 to 125 600 ±20 400 800* 400 800* 1500 1.96~2.94 1.96~2.94 0.98~1.47 400 2500 Units °C °C Volts Volts Amperes Amperes Amperes Amperes Watts N·m N·m N·m Grams Vrms * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES V GE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 40mA, VCE = 10V IC = 400A, VGE = 15V IC = 400A, VGE = 15V, Tj = 150°C Total Gate Charge Emitter-Collector Voltage VCC = 400V, IC = 400A, VGE = 15V IE = 400A, VGE = 0V Min. – – 4.5 – – – – Typ. – – 6.0 2.1 2.15 1200 – Max. 1.0 0.5 7.5 2.8** – – 2.8 Units mA µA Volts Volts Volts nC Volts ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switching Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr IE = 400A, diE/dt = –800A/µs IE = 400A, diE/dt = –800A/µs VCC = 300V, IC = 400A, VGE1 = VGE2 = 15V, RG = 1.6Ω VGE = 0V, VCE = 10V Test Conditions Min. – – – – – – – – – Typ. – – – – – – – – 1.08 Max. 40 14 8 350 600 350 300 110 – Units nF nF nF ns ns ns ns ns µC Diode Reverse Recovery Time Diode Reverse Recovery Charge Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions Per IGBT Per FWDi Per Module, Thermal Grease Applied Min. – – – Typ. – – – Max. 0.085 0.18 0.040 Units °C/W °C/W °C/W Sep.1998 MITSUBISHI IGBT MODULES CM400HA-12H HIGH POWER SWITCHING USE INSULATED TYPE OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) 800 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 5 Tj = 25oC COLLECTOR CURRENT, IC, (AMPERES) 800 VGE = 15V Tj = 25°C Tj = 125°C VCE = 10V Tj = 25°C Tj = 125°C COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 15 12 4 600 11 600 3 400 10 400 2 200 7 9 8 1 200 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 200 400 600 800 COLLECTOR-CURRENT, IC, (AMPERES) 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 103 Tj = 25°C Tj = 25°C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 102 Cies 8 IC = 800A 101 Cres 6 IC = 400A 102 4 100 Coes VGE = 0V 2 IC = 160A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 0 0.8 1.6 2.4 3.2 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, t rr, (ns) 103 td(off) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 400A 16 SWITCHING TIME, (ns) tf td(on) Irr VCC = 200V 12 102 VCC = 300V VGE = ±15V RG = 1.6Ω Tj = 125°C 102 t rr 101 VCC = 300V 8 tr di/dt = -800A/µsec Tj = 25°C 4 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 100 103 0 0 400 800 1200 1600 2000 GATE CHARGE, QG, (nC) Sep.1998 MITSUBISHI IGBT MODULES CM400HA-12H HIGH POWER SWITCHING USE INSULATED TYPE NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth • (NORMALIZED VALUE) 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 101 10-3 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.085°C/W 100 Single Pulse TC = 25°C Per Unit Base = R th(j-c) = 0.18°C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 Sep.1998