CM900HB-90H

MITSUBISHI HVIGBT MODULES CM900HB-90H HIGH POWER SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM900HB-90H q IC ................................................................... 900A q VCES ....................................................... 4500V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 57 ±0.25 190 171 57 ±0.25 57 ±0.25 6 - M8 NUTS C C C C G E C C C 20 CM C E E E 124 ±0.25 140 E E E 40 CIRCUIT DIAGRAM E G 20.25 41.25 3 - M4 NUTS 79.4 61.5 13 61.5 5.2 15 40 8 - φ7MOUNTING HOLES 38 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) 5 LABEL 29.5 28 Mar. 2003 MITSUBISHI HVIGBT MODULES CM900HB-90H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES VGES IC ICM I E (Note 2) I EM(Note 2) P C (Note 3) Tj Tstg Viso — — Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V DC, TC = 85°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 4500 ±20 900 1800 900 1800 11100 –40 ~ +125 –40 ~ +125 6000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 2.2 Unit V V A A A A W °C °C V N·m N·m N·m kg (Note 1) (Note 1) — — Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25°C) Symbol ICES Item Conditions VCE = VCES, VGE = 0V IC = 90mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25°C IC = 900A, VGE = 15V Tj = 125°C VCE = 10V VGE = 0V VCC = 2250V, IC = 900A, VGE = 15V VCC = 2250V, IC = 900A VGE1 = VGE2 = 15V RG = 10Ω Resistive load switching operation IE = 900A, VGE = 0V IE = 900A, die / dt = –1800A / µs Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min — 4.5 — — — — — — — — — — — — — — — — — Limits Typ — 6.0 — 3.00 3.30 162 12.0 3.6 — — — — — 4.00 — 360 — — 0.007 Max 18 7.5 0.5 3.90 — — — — — 2.40 2.40 6.00 1.20 5.20 1.80 — 0.009 0.018 — Unit mA V µA V nF nF nF µC µs µs µs µs V µs µC K/W K/W K/W Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Total gate charge QG td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time V EC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Q rr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance Rth(j-c)R Rth(c-f) Contact thermal resistance Note 1. 2. 3. 4. (Note 4) (Note 1) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed T jmax rating. IE , VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 125°C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Mar. 2003 MITSUBISHI HVIGBT MODULES CM900HB-90H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1800 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 12000 VCE = 10V 10000 8000 6000 4000 2000 0 Tj = 25°C VGE=20V VGE=12V VGE=10V COLLECTOR CURRENT IC (A) 1500 1200 VGE=15V VGE=14V 900 600 300 0 VGE=8V Tj = 25°C Tj = 125°C 0 4 8 12 16 20 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 Tj = 25°C 8 VGE = 15V 6 8 6 Ic=1800A 4 Ic=900A 4 2 Tj = 25°C Tj = 125°C 0 300 600 900 1200 1500 1800 2 Ic=450A 0 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 8 CAPACITANCE Cies, Coes, Cres (nF) CAPACITANCE CHARACTERISTICS (TYPICAL) 103 7 5 3 2 102 7 5 3 2 101 Coes 7 5 3 VGE = 15V, Tj = 25°C Cres 2 Cies, Coes : f = 100kHz : f = 1MHz Cres 100 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 6 Cies 4 2 Tj = 25°C Tj = 125°C 0 0 300 600 900 1200 1500 1800 EMITTER CURRENT IE (A) Mar. 2003 MITSUBISHI HVIGBT MODULES CM900HB-90H 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE 10–1 7 5 10–1 7 5 3 2 10–2 5 7 102 23 5 7 103 Irr 103 7 5 3 2 5 102 5 7 102 23 5 7 103 23 5 23 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) SWITCHING ENERGY (J/P) SWITCHING ENERGY (J/P) HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 7.0 Eon VCC = 2250V, VGE = ±15V, RG = 10Ω, Tj = 125°C, 6.0 Inductive load 5.0 4.0 3.0 2.0 1.0 0 0 300 600 900 Erec 1200 1500 1800 Eoff HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 CURRENT (A) GATE RESISTANCE (Ω) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS GATE-EMITTER VOLTAGE VGE (V) 16 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j – c) VCC = 2250V IC = 900A 101 7 5 3 2 100 7 5 3 2 10–1 7 5 3 2 Single Pulse TC = 25°C Rth(j – c)Q = 0.009K/ W Rth(j – c)R = 0.018K/ W 12 8 4 0 0 2000 4000 6000 8000 10000 12000 GATE CHARGE QG (nC) 10–2 10–3 2 3 5 7 10–2 2 3 5 7 10–1 2 3 5 7 100 TIME (s) REVERSE RECOVERY CURRENT Irr (A) Mar. 2003 REVERSE RECOVERY TIME trr (µs) HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 5 3 VCC = 2250V, VGE = ±15V 2 RG = 10Ω, Tj = 125°C 101 Inductive load 7 5 td(off) 3 2 td(on) 100 7 tr 5 tf 3 2 SWITCHING TIMES (µs) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 101 105 7 VCC = 2250V, Tj = 125°C 7 5 Inductive load 5 3 IGBT drive conditions 3 2 VGE = ±15V, RG = 10Ω 2 0 10 104 trr 7 7 5 5 3 3 2 2