CR3PM

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE CR3PM OUTLINE DRAWING 10.5 MAX 5.2 1.2 Dimensions in mm 2.8 17 5.0 TYPE NAME VOLTAGE CLASS φ3.2±0.2 3.6 1.3 MAX 13.5 MIN 0.8 2.54 2.54 8.5 0.5 2.6 • • • • • IT (AV) ........................................................................... 3A VDRM ..............................................................400V/600V IGT ......................................................................... 100µ A Viso ........................................................................ 1500V UL Recognized: File No. E80276 123 2 ∗ Measurement point of case temperature 3 1 1 CATHODE 2 ANODE 3 GATE TO-220F APPLICATION TV sets, control of household equipment such as electric blankets, other general purpose control applications MAXIMUM RATINGS (Ta=25°C, unless otherwise noted) Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage V1 V1 Voltage class 8 400 500 320 400 320 12 600 720 480 600 480 4.5 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Viso Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Tc =103°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 4.7 3.0 70 24.5 0.5 0.1 6 6 0.3 –40 ~ +125 –40 ~ +125 Unit A A A A2s W W V V A °C °C g V Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Isolation voltage Typical value Ta=25°C, AC 1 minute, each terminal to case 2.0 1500 V1. With gate to cathode resistance RGK=220Ω. Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT R th (j-c) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Test conditions Tj=125°C, VRRM applied, RGK=220Ω Tj=125°C, VDRM applied, RGK=220Ω Tc=25 °C, ITM =10A, instantaneous value Tj=25 °C, VD=6V, IT=0.1A Tj=125°C, VD=1/2VDRM, RGK=220Ω Tj=25 °C, VD=6V, IT=0.1A Junction to case V2 Limits Min. — — — — 0.1 1 — Typ. — — — — — — — Max. 2.0 2.0 1.6 0.8 — 100 V 3 4.1 Unit mA mA V V V µA °C/ W V2. The contact thermal resistance R th (c-f) is 0.5°C/W with greased. V3. If special values of I GT are required, choose at least two items from those listed in the table below. (Example: AB, BC) Item IGT (µ A) A 1 ~ 30 B 20 ~ 50 C 40 ~ 100 The above values do not include the current flowing through the 220 Ω resistance between the gate and cathode. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 102 7 Tc = 25°C 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4 3.8 ON-STATE VOLTAGE (V) RATED SURGE ON-STATE CURRENT 100 SURGE ON-STATE CURRENT (A) 90 80 70 60 50 40 30 20 10 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) GATE VOLTAGE (V) VFGM = 6V PGM = 0.5W GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 103 7 5 3 2 102 7 5 3 2 #1 #2 TYPICAL EXAMPLE IGT (25°C) # 1 45µA # 2 18µA PG(AV) = 0.1W VGT = 0.8V IGT = 200µA (Tj = 25°C) IFGM = 0.3A 10–1 7 VGD = 0.1V 5 10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 GATE CURRENT (mA) 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (°C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE 1.0 GATE TRIGGER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 0 –40 –20 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (°C) TRANSIENT THERMAL IMPEDANCE (°C/W) 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 10–1 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 TIME (s) AVERAGE POWER DISSIPATION (W) CASE TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 8 RESISTIVE, INDUCTIVE 7 θ LOADS 180° 360° 6 120° 90° 5 60° θ = 30° 4 3 2 1 0 0 1.0 2.0 3.0 4.0 5.0 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 140 120 100 80 60 40 20 0 0 1.0 2.0 3.0 4.0 5.0 θ = 30° 60° 90° θ 360° RESISTIVE, INDUCTIVE LOADS 180° 120° AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE AVERAGE POWER DISSIPATION (W) AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 160 NATURAL CONVECTION 140 θ WITHOUT FIN 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 360° RESISTIVE, θ = 180° 120° INDUCTIVE 90° LOADS 60° 30° MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 8 7 6 5 4 3 2 1 0 0 1.0 2.0 3.0 4.0 5.0 θ θ 120° 180° 360° 90° RESISTIVE 60° LOADS θ = 30° AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 CASE TEMPERATURE (°C) 140 120 100 80 60 40 θ θ 360° θ = 30° 60° 90° 120° 180° AMBIENT TEMPERATURE (°C) ALLOWABLE AMBIENT TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 160 NATURAL CONVECTION 140 θθ WITHOUT FIN 360° 120 100 80 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 θ = 180° RESISTIVE 120° LOADS 90° 60° 30° 20 RESISTIVE LOADS 0 0 1.0 2.0 3.0 4.0 5.0 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE HOLDING CURRENT VS. JUNCTION TEMPERATURE 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 VD = 12V RGK = 1kΩ DISTRIBUTION 100 (%) 160 HOLDING CURRENT (mA) 140 120 100 80 60 40 20 TYPICAL EXAMPLE RGK = 220Ω BREAKOVER VOLTAGE (T j = t °C) BREAKOVER VOLTAGE (T j = 25°C) ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, TYPICAL EXAMPLE 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 10–1 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR3PM LOW POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE HOLDING CURRENT VS. GATE TO CATHODE RESISTANCE 100 (%) TURN-ON TIME VS. GATE CURRENT 101 7 5 4 3 2 100 7 5 4 3 2 10–1 0 10 # VD = 100V Ta = 25°C TYPICAL EXAMPLE IGT (25°C) # 33µA 400 350 300 250 #1 HOLDING CURRENT (RGK = r k Ω) HOLDING CURRENT (RGK = 1k Ω) #2 200 150 100 50 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE TO CATHODE RESISTANCE (kΩ) TURN-ON TIME (µs) TYPICAL EXAMPLE IGT (25°C) # 1 25µA # 2 50µA 2 3 4 5 7 101 2 3 4 5 7 102 GATE CURRENT (mA) 80 REPETITIVE PEAK REVERSE VOLTAGE (Tj = t °C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) TURN-OFF TIME (µs) IT = 2A 70 VD = 50V, VR = 50V dv/dt = 5V/µs 60 50 40 30 20 10 0 0 ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, ,,,,,,,,, 40 60 100 (%) TURN-OFF TIME VS. JUNCTION TEMPERATURE REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) TYPICAL EXAMPLE DISTRIBUTION 20 80 100 120 140 160 JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2 102 7 5 3 2 101 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 GATE CURRENT PULSE WIDTH (µs) 100 (%) tw 0.1s GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) Feb.1999