CR8AM

MITSUBISHI SEMICONDUCTOR 〈THYRISTOR 〉 CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE CR8AM OUTLINE DRAWING 10.5 MAX 3.2±0.2 Dimensions in mm 4.5 4 1.3 16 MAX ∗ 12.5 MIN 3.8 MAX TYPE NAME VOLTAGE CLASS 1.0 0.8 2.5 7.0 φ3.6±0.2 2.5 4.5 0.5 2.6 123 24 1 2 3 4 ∗ Measurement point of case temperature • IT (AV) ........................................................................... 8A • VDRM ..............................................................400V/600V • IGT ..........................................................................15mA 3 1 CATHODE ANODE GATE ANODE TO-220 APPLICATION Switching mode power supply, ECR, regulator for autocycle, motor control MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage DC off-state voltage Voltage class 8 400 500 320 400 320 12 600 720 480 600 480 Unit V V V V V Symbol IT (RMS) IT (AV) ITSM I2t PGM PG (AV) VFGM VRGM IFGM Tj Tstg — Parameter RMS on-state current Average on-state current Surge on-state current I2t for fusing Conditions Commercial frequency, sine half wave, 180° conduction, Tc =88°C 60Hz sine half wave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current Ratings 12.6 8 120 60 5 0.5 6 10 2 –40 ~ +125 –40 ~ +125 Unit A A A A2s W W V V A °C °C g Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Weight Typical value 2.0 Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE ELECTRICAL CHARACTERISTICS Symbol IRRM IDRM VTM VGT VGD IGT IH R th (j-c) Parameter Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Test conditions Tj=125°C, V RRM applied Tj=125°C, V DRM applied Tc=25 °C, ITM =25A, instantaneous value Tj=25 °C, VD=6V, IT=1A Tj=125°C, VD=1/2VDRM Tj=25 °C, VD=6V, IT=1A Tj=25 °C, VD=12V Junction to case Limits Min. — — — — 0.2 — — — Typ. — — — — — — 15 — Max. 2.0 2.0 1.4 1.0 — 15 — 3.0 Unit mA mA V V V mA mA °C/W V1. The contact thermal resistance R th (c-f) is 1.0°C/W with greased. PERFORMANCE CURVES MAXIMUM ON-STATE CHARACTERISTICS 103 7 Tc = 125°C 5 3 2 102 7 5 3 2 101 7 5 3 2 100 0 1 2 3 4 5 RATED SURGE ON-STATE CURRENT 200 SURGE ON-STATE CURRENT (A) 180 160 140 120 100 80 60 40 20 0 100 2 3 4 5 7 101 2 3 4 5 7 102 ON-STATE CURRENT (A) ON-STATE VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE GATE CHARACTERISTICS 102 7 5 3 2 101 7 5 3 2 100 7 5 3 2 GATE TRIGGER CURRENT VS. JUNCTION TEMPERATURE 100 (%) VFGM = 6V PGM = 5W GATE VOLTAGE (V) GATE TRIGGER CURRENT (Tj = t°C) GATE TRIGGER CURRENT (Tj = 25°C) 103 7 TYPICAL EXAMPLE 5 3 2 102 7 5 3 2 101 7 5 3 2 100 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) VGT = 1V IGT = 15mA PG(AV) = 0.5W VGD = 0.2V IFGM = 2A 10–1 5 7 101 2 3 5 7 102 2 3 5 7 103 2 3 5 GATE CURRENT (mA) TRANSIENT THERMAL IMPEDANCE (°C/W) 1.0 GATE TRIGGER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, ,,,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 0 20 40 60 80 100 120 JUNCTION TEMPERATURE (°C) GATE TRIGGER VOLTAGE VS. JUNCTION TEMPERATURE MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) 102 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 101 100 10–1 0.1 0 –40 –20 10–2 10–3 2 3 5 710–22 3 5 710–12 3 5 7 100 2 3 5 7 101 TIME (s) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE HALF WAVE) 32 ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE HALF WAVE) 200 180 CASE TEMPERATURE (°C) 28 24 20 16 12 8 4 0 0 θ 360° RESISTIVE, INDUCTIVE LOADS 2 4 6 8 10 12 14 16 θ = 30° 60° 90° 120° 180° 160 140 120 100 80 60 40 20 0 0 θ 360° RESISTIVE, INDUCTIVE LOADS θ = 30° 60° 90° 120° 180° 1 2 3 4 5 6 7 8 9 10 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (SINGLE-PHASE FULL WAVE) 32 CASE TEMPERATURE (°C) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (SINGLE-PHASE FULL WAVE) 200 180 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 12 14 16 18 20 θ = 30° 90° 180° 60° 120° θ θ 28 24 20 16 12 8 4 0 0 2 4 6 θ θ θ = 30° 60° 90° 120° 180° 360° RESISTIVE LOADS 360° RESISTIVE LOADS 8 10 12 14 16 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) AVERAGE POWER DISSIPATION (W) MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 32 CASE TEMPERATURE (°C) ALLOWABLE CASE TEMPERATURE VS. AVERAGE ON-STATE CURRENT (RECTANGULAR WAVE) 200 180 160 140 120 100 80 60 40 20 θ = 30° 90° 180° 60° 120° 270° DC θ 360° RESISTIVE, INDUCTIVE LOADS 28 24 20 16 12 8 4 0 0 2 4 θ RESISTIVE, 360° INDUCTIVE LOADS 6 8 10 12 14 120° 180° θ = 30° 60° 90° 270° DC 16 0 0 2 4 6 8 10 12 14 16 18 20 AVERAGE ON-STATE CURRENT (A) AVERAGE ON-STATE CURRENT (A) 100 (%) 160 140 120 100 80 60 40 20 TYPICAL EXAMPLE BREAKOVER VOLTAGE (dv/dt = vV/µs ) BREAKOVER VOLTAGE (dv/dt = 1V/µs ) BREAKOVER VOLTAGE (T j = t °C) BREAKOVER VOLTAGE (T j = 25°C) 100 (%) BREAKOVER VOLTAGE VS. JUNCTION TEMPERATURE BREAKOVER VOLTAGE VS. RATE OF RISE OF OFF-STATE VOLTAGE 160 Tj = 125°C TYPICAL 140 EXAMPLE 120 IGT (25°C) # 1 4.7mA 100 # 2 7.2mA 80 60 40 20 0 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 RATE OF RISE OF OFF-STATE VOLTAGE (V/µs) #1 #2 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) Feb.1999 MITSUBISHI SEMICONDUCTOR 〈 THYRISTOR〉 CR8AM MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE HOLDING CURRENT VS. JUNCTION TEMPERATURE 103 7 5 3 2 102 7 5 3 2 101 7 5 3 2 50 45 HOLDING CURRENT (mA) HOLDING CURRENT VS. GATE TRIGGER CURRENT HOLDING CURRENT (mA) 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 20 ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, ,,,,,,,,,,, DISTRIBUTION TYPICAL EXAMPLE 100 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) GATE TRIGGER CURRENT (mA) TURN-ON TIME VS. GATE CURRENT 5.0 4.5 TURN-ON TIME (µs) TURN-OFF TIME (µs) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 # VD = 100V RL = 12Ω Ta = 25°C TYPICAL EXAMPLE IGT (25°C) # 5.2mA 80 70 60 50 40 30 20 10 ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, ,,,,,,,,,, TYPICAL EXAMPLE 0 20 TURN-OFF TIME VS. JUNCTION TEMPERATURE DISTRIBUTION 0 10 20 30 40 50 60 70 80 90 100 GATE CURRENT (mA) 0 IT = 8A, –di/dt = 5A/µs, VD = 300V, dv/dt = 20V/µs VR = 50V 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = t °C) REPETITIVE PEAK REVERSE VOLTAGE (Tj = 25°C) 100 (%) REPETITIVE PEAK REVERSE VOLTAGE VS. JUNCTION TEMPERATURE 160 TYPICAL EXAMPLE 140 120 100 80 60 40 20 0 –40 –20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (°C) 100 (%) GATE TRIGGER CURRENT VS. GATE CURRENT PULSE WIDTH 104 7 TYPICAL EXAMPLE 5 3 2 103 7 5 3 2 102 7 5 3 2 101 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 GATE CURRENT PULSE WIDTH (µs) tw 0.1s GATE TRIGGER CURRENT (tw) GATE TRIGGER CURRENT (DC) Feb.1999