FK18SM-12

MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE FK18SM-12 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 2 2 4 20.0 φ 3.2 5.0 1.0 q 5.45 w e 5.45 19.5MIN. 4.4 0.6 2.8 4 wr q GATE w DRAIN e SOURCE r DRAIN e ¡VDSS ................................................................................ 600V ¡rDS (ON) (MAX) .............................................................. 0.54Ω ¡ID ......................................................................................... 18A ¡Integrated Fast Recovery Diode (MAX.) ........150ns q TO-3P APPLICATION Servo motor drive, Robot, UPS, Inverter Fluorecent lamp, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IS ISM PD Tch Tstg — (Tc = 25°C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 600 ±30 18 54 18 54 275 –55 ~ +150 –55 ~ +150 4.8 Unit V V A A A A W °C °C g Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IG = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0V ID = 1mA, VDS = 10V ID = 9A, VGS = 10V ID = 9A, VGS = 10V ID = 9A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 600 ±30 — — 2 — — 8.0 — — — — — — — — — — Typ. — — — — 3 0.42 3.78 13 2800 350 50 50 85 350 100 1.5 — — Max. — — ±10 1 4 0.54 4.86 — — — — — — — — 2.0 0.45 150 Unit V V µA mA V Ω V S pF pF pF ns ns ns ns V °C/W ns Drain-source breakdown voltage Gate-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 200V, ID = 9A, VGS = 10V, RGEN = RGS = 50Ω IS = 9A, VGS = 0V Channel to case IS = 18A, dis/dt = –100A/µs PERFORMANCE CURVES POWER DISSIPATION DERATING CURVE 300 MAXIMUM SAFE OPERATING AREA 102 7 5 3 2 101 7 5 3 2 1ms 10ms 100ms DC TC = 25°C Single Pulse POWER DISSIPATION PD (W) DRAIN CURRENT ID (A) 250 200 150 100 50 0 tw=100µs 100 7 5 3 2 0 50 100 150 200 10–1 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103 DRAIN-SOURCE VOLTAGE VDS (V) Feb.1999 CASE TEMPERATURE TC (°C) MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE OUTPUT CHARACTERISTICS (TYPICAL) 50 TC = 25°C Pulse Test DRAIN CURRENT ID (A) 40 DRAIN CURRENT ID (A) VGS = 20V 10V 6V 16 PD = 275W 12 20 OUTPUT CHARACTERISTICS (TYPICAL) VGS=20V 10V 6V 5V TC = 25°C Pulse Test 30 5V 20 8 4V 10 PD = 275W 4V 4 0 0 10 20 30 40 50 0 0 4 8 12 16 20 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN-SOURCE VOLTAGE VDS (V) ON-STATE VOLTAGE VS. GATE-SOURCE VOLTAGE (TYPICAL) 40 DRAIN-SOURCE ON-STATE VOLTAGE VDS (ON) (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (Ω) TC = 25°C Pulse Test 32 1.0 ON-STATE RESISTANCE VS. DRAIN CURRENT (TYPICAL) TC = 25°C Pulse Test 0.8 VGS = 10V 0.6 20V 24 ID = 35A 16 18A 8 9A 0 0 4 8 12 16 20 0.4 0.2 0 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VGS (V) TRANSFER CHARACTERISTICS (TYPICAL) 40 TC = 25°C VDS = 50V Pulse Test 102 7 5 FORWARD TRANSFER ADMITTANCE yfs (S) 3 2 101 7 5 3 2 FORWARD TRANSFER ADMITTANCE VS.DRAIN CURRENT (TYPICAL) VDS = 10V Pulse Test DRAIN CURRENT ID (A) 32 24 TC = 25°C 16 75°C 125°C 8 0 0 4 8 12 16 20 100 0 10 23 5 7 101 23 5 7 102 GATE-SOURCE VOLTAGE VGS (V) DRAIN CURRENT ID (A) Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE CAPACITANCE VS. DRAIN-SOURCE VOLTAGE (TYPICAL) 7 5 SWITCHING TIME (ns) 3 2 103 7 5 3 2 Coss Ciss 103 7 5 3 2 102 tf 7 5 td(on) 3 2 101 100 tr Tch = 25°C VDD = 200V VGS = 10V RGEN = RGS = 50Ω 23 5 7 101 23 5 7 102 SWITCHING CHARACTERISTICS (TYPICAL) td(off) CAPACITANCE Ciss, Coss, Crss (pF) 102 7 5 Tch = 25°C Crss f = 1MHz 3 VGS = 0V 2 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3 DRAIN-SOURCE VOLTAGE VDS (V) DRAIN CURRENT ID (A) GATE-SOURCE VOLTAGE VS.GATE CHARGE (TYPICAL) GATE-SOURCE VOLTAGE VGS (V) 20 SOURCE CURRENT IS (A) Tch = 25°C ID = 18A 16 VDS = 100V 12 400V 200V 50 SOURCE-DRAIN DIODE FORWARD CHARACTERISTICS (TYPICAL) VGS = 0V Pulse Test 40 TC = 125°C 30 75°C 25°C 8 20 4 10 0 0 40 80 120 160 200 0 0 0.8 1.6 2.4 3.2 4.0 GATE CHARGE Qg (nC) SOURCE-DRAIN VOLTAGE VSD (V) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C) DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C) ON-STATE RESISTANCE VS. CHANNEL TEMPERATURE (TYPICAL) 101 7 5 3 2 100 7 5 3 2 10–1 0 50 100 150 200 250 5.0 GATE-SOURCE THRESHOLD VOLTAGE VGS (th) (V) VGS = 10V ID = 1/2ID Pulse Test THRESHOLD VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VDS = 10V ID = 1mA 4.0 3.0 2.0 1.0 0 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) CHANNEL TEMPERATURE Tch (°C) Feb.1999 MITSUBISHI Nch POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C) DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C) BREAKDOWN VOLTAGE VS. CHANNEL TEMPERATURE (TYPICAL) VGS = 0V ID = 1mA 1.2 REVERSE RECOVERY TIME trr (ns) 1.4 1.0 3 2 trr 102 7 5 3 2 101 0 10 23 5 7 101 Irr 3 2 101 7 5 3 Tch = 25°C 2 Tch = 150°C 100 23 5 7 102 0.8 0.6 0.4 –50 0 50 100 150 CHANNEL TEMPERATURE Tch (°C) REVERSE RECOVERY CURRENT Irr (A) TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W) DIODE REVERSE VS. SOURCE CURRENT dis/dt CHARACTERISTIC (TYPICAL) 102 103 7 7 5 5 3 3 trr 2 2 102 7 5 3 2 101 7 5 3 2 100 101 23 5 7 102 101 7 5 3 2 100 7 5 3 2 SOURCE CURRENT IS (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS 101 7 5 3 2 REVERSE RECOVERY TIME trr (ns) Irr IS = 18A VGS = 0V VDD = 250V Tch = 25°C Tch = 150°C 23 10–1 5 7 103 0.05 D= tw 0.02 T 0.01 Single Pulse 10–2 10–4 2 3 5710–3 2 3 5710–22 3 5710–12 3 57 100 2 3 57 101 2 3 57 102 PULSE WIDTH tw (s) 100 7 D=1 5 3 0.5 2 0.2 10–1 7 0.1 5 3 2 PDM tw T SOURCE CURRENT dis/dt (–A/µs) Feb.1999 REVERSE RECOVERY CURRENT Irr (A) DIODE REVERSE VS. SOURCE CURRENT CHARACTERISTIC (TYPICAL) 102 103 dis/dt = –100A/µs 7 7 VGS = 0V 5 5 VDD = 250V