ML720L11S

MITSUBISHI LASER DIODES ML7XX11 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES TYPE NAME ML725B11F/ML720J11S ML725AA11F / ML720AA11S ML725J11F / ML720L11S APPLICATION · ~1.25Gbps digital transmission system FEATURES · Homogeneous grating (AR/HR facet coating) structure DFB · Wide temperature range operation ( -40 to 85ºC ) · Low threshold current (typical 6mA) · High speed response (typical 0.1nsec) · φ5.6mm TO-CAN package · Flat window cap, Ball lens cap, or Aspherical lens cap DESCRIPTION ML7XX11series are DFB (Distributed Feedback) laser diodes emitting light beam around 1310nm. They are well suited for light source in long distance digital transmission system. They are hermetically sealed devices with the photo diode for optical output monitoring. ABSOLUTE MAXIMUM RATINGS Symbol Po If VRL VRD IFD Tc Tstg Parameter Light output power Forward current (Laser diode) Reverse voltage (Laser diode) Reverse voltage (Photo diode) Forward current (Photo diode) Case temperature Storage temperature Conditions CW ------------Ratings 10 150 2 20 2 -40 to +85 -40 to +100 Unit mW mA V V mA ºC ºC ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [ Flat window cap : ML725B11F / ML720J11S ] Symbol Ith Iop Vop η λp θ // θ┴ SMSR tr,tf Im Id Ct Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Beam divergence angle (parallel) Beam divergence angle (perpendicular) Side mode suppression ratio Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions CW CW, Tc=85ºC CW, Po=5mW CW, Po=5mW, Tc=85ºC CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW Tc= - 40 to +85ºC Ib=Ith, 20-80% CW, Po=5mW VRD=5V VRD=5V Min. ----------0.3 1290 ----35 Typ. 6 30 16 50 1.1 0.5 1310 25 30 40 Max. 12 40 30 75 1.5 --1330 35 40 --Unit mA mA V mW/mA nm deg. deg. dB --0.1 0.2 ns 0.05 0.2 --mA ----0.1 µA --10 20 pF Except influence of the 18mm lead. MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML7XX11 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [ Ball lens cap ; ML725AA11F / ML720AA11S ] Symbol Ith Iop Vop η λp SMSR Pf Df tr,tf Im Id Ct Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Side mode suppression ratio Fiber coupling power Focul length Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions CW CW, Tc=85ºC CW, Po=5mW CW, Po=5mW, Tc=85ºC CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW Tc= - 40 to +85ºC CW, Po=5mW, SMF CW, Po=5mW, SMF Ib=Ith, 20-80% CW, Po=5mW VRD=5V VRD=5V Min. ----------0.3 1290 35 Typ. 6 30 16 50 1.1 0.5 1310 40 Max. 12 40 30 75 1.5 --1330 --Unit mA mA V mW/mA nm dB 0.5 1.0 --mW 6.0 6.5 7.0 mm --0.1 0.2 ns 0.05 0.2 --mA ----0.1 µA --10 20 pF Except influence of the 18mm lead. ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC otherwise specified) [ Aspherical lens cap ; ML725J11F / ML720L11S ] Symbol Ith Iop Vop η λp SMSR Pf Df tr,tf Im Id Ct Parameter Threshold current Operation current Operating voltage Slope efficiency Peak wavelength Side mode suppression ratio Fiber coupling power Focul length Rise and Fall time Monitoring output current (PD) Dark current (PD) Capacitance (PD) Test conditions CW CW, Tc=85ºC CW, Po=5mW CW, Po=5mW, Tc=85ºC CW, Po=5mW CW, Po=5mW CW, Po=5mW CW, Po=5mW Tc= - 40 to +85ºC CW, Po=5mW, SMF CW, Po=5mW, SMF Ib=Ith, 20-80% CW, Po=5mW VRD=5V VRD=5V Min. ----------0.3 1290 35 Typ. 6 30 16 50 1.1 0.5 1310 40 Max. 12 40 30 75 1.5 --1330 --Unit mA mA V mW/mA nm dB 1.5 2.0 --mW 6.5 7.5 8.5 mm --0.1 0.2 ns 0.05 0.2 --mA ----0.1 µA --10 20 pF Except influence of the 18mm lead. MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML7XX11 SERIES Notice : Some parametric limits are subject to change OUTLINE DRAWINGS Dimension : mm InGaAsP DFB LASER DIODES ML725B11F ML720J11S 2-90° φ5.6 -0.03 φ4.25 Ｙ (0.25) (3) +0 (3) LD Case (1) (2) PD (1) (4) (2) Ｘ (4) (0.25) ML725B11F 1±0.1 0.25 ±0.03 φ3.55±0.1 (3) LD 1.27 ±0.0 3 Emitting Facet (Glass) φ2.0Min. φ1.0Min. Case 2.1±0.1 5 (1) (2) PD Reference Plane ±0.1 1.2 (4) 18 ±1 φ2.0 ±0.25 (P.C.D.) (1) (2) 4-φ0.45 ±0.05 ML720J11S Pin Connection ( Top view ) Dimension : mm ML725AA11F ML720AA11S 2-90° (1) φ5.6 -0.03 φ4.25 Ｙ (0.25) (3) (3) (Dimension:mm) Case LD (1) (2) PD (2) (4) Ｘ (4) (0.25) 1±0.1 ML725AA11F φ3.55±0.1 φ2.0±0.01 (6.7) (3) LD 1.27 ±0.03 Case 3.87 ±0.1 (3.0) Emitting Facet (1) (2) PD Reference Plane 1.2 (4) φ2.0±0.25 (P.C.D.) (1) (2) 4-φ0.45±0.05 ML720AA11S Pin Connection ( Top view ) 18 ±1 MITSUBISHI ELECTRIC Dec. 2004 MITSUBISHI LASER DIODES ML7XX11 SERIES Notice : Some parametric limits are subject to change InGaAsP DFB LASER DIODES OUTLINE DRAWINGS Dimension : mm ML725J11F ML720L11S Top View 2-90° (3) φ5.6 -0.03 φ4.3 Ｙ (0.25) (3) +0 Case LD (1) (2) PD (4) (1) (4) (2) Ｘ (0.25) ML725J11F 1±0.1 φ3.75±0.1 Ｚ (3) LD Case 3.97 ±0.15 (7.51) 1.27 ±0.03 (1) Emitting Facet Reference Plane (2) PD ±0.1 1.2 (4) φ2.0±0.25 (P.C.D.) 4-φ0.45±0.05 18 ±1 ML720L11S Pin Connection ( Top view ) (1) (2) MITSUBISHI ELECTRIC Dec. 2004