PM100CVA120

MITSUBISHI MITSUBISHI PM100CVA120 PM100CVA120 FLAT-BASE TYPE FLAT-BASE TYPE INSULATED PACKAGE INSULATED PACKAGE PM100CVA120 FEATURE • 3φ 100A, 1200V Current-sense IGBT for 20kHz switching • Monolithic gate drive & protection logic • Detection, protection & status indication circuits for overcurrent, short-circuit, over-temperature & under-voltage (P-FO available from upper leg devices) • Acoustic noise-less 22kW class inverter application • UL Recognized Yellow Card No. E80276(N) File No. E80271 APPLICATION General purpose inverter, servo drives and other motor controls PACKAGE OUTLINES Dimensions in mm 7.5 7.5 15.1 120 105 ±0.25 12.3 4–φ5.5MOUNTING HOLES 1234 102 89.2 ±0.5 87 ±0.25 9 10 1112 13 141516 17 18 19 U V W 12.3 2.54 ±0.25 5-M5NUTS 12 43.57 ±0.3 5678 14.1 ±0.25 14.1 ±0.25 14.1 ±0.25 TERMINAL CODE 1. WFO 8. VVP1 15. VNC 2. VWPC 9. UFO 16. VN1 3. WP 10. VUPC 17. UN 4. VWP1 11. UP 18. VN 5. VFO 12. VUP1 19. WN 6. VVPC 13. NC 14. FO 7. VP 1.1 ±0.3 18.25 85.2 19.5 22 22 12 24.1 –0.5 21.6 4 24.1 33.7 34.7 +1.0 LABEL P N 14.6 ±0.3 A 2.54 ±0.25 2.54 ±0.25 2.54 ±0.25 3.49 ±0.25 3.49 ±0.25 4-φ3 C0.7 0.64 A : DETAIL Jun. 2005 MITSUBISHI PM100CVA120 FLAT-BASE TYPE INSULATED PACKAGE INTERNAL FUNCTIONS BLOCK DIAGRAM FO Rfo Rfo Rfo Rfo NC VNC WN VN1 VN UN WP VWP1 VP VVP1 UP VUP1 VWPC WFO VVPC VFO VUPC UFO GND FO In VCC TEMP GND Si OUT Th GND FO In VCC GND In FO VCC GND FO In VCC GND FO In VCC GND FO In VCC GND Si OUT GND Si OUT GND Si OUT GND Si OUT GND Si OUT Rfo=1.5kΩ N W V U P MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCES ±IC ±ICP PC Tj Parameter Collector-Emitter Voltage Collector Current Collector Current (Peak) Collector Dissipation Junction Temperature Condition VD = 15V, VCIN = 15V TC = 25°C TC = 25°C TC = 25°C Ratings 1200 100 200 541 –20 ~ +150 Unit V A A W °C CONTROL PART Symbol VD VCIN VFO IFO Parameter Supply Voltage Input Voltage Fault Output Supply Voltage Fault Output Current Condition Applied between : VUP1-VUPC VVP1-VVPC, VWP1-VWPC, VN1-VNC Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC Applied between : UFO-VUPC, VFO-VVPC, WFO-VWPC FO-VNC Sink current at UFO, VFO, WFO and FO terminal Ratings 20 20 20 20 Unit V V V mA Jun. 2005 MITSUBISHI PM100CVA120 FLAT-BASE TYPE INSULATED PACKAGE TOTAL SYSTEM Parameter Supply Voltage Protected by VCC(PROT) SC Symbol VCC(surge) Supply Voltage (Surge) TC Condition VD = 13.5 ~ 16.5V, Inverter Part, Tj = 125°C Start Applied between : P-N, Surge value or without switching Ratings 800 1000 –20 ~ +100 –40 ~ +125 2500 Unit V V °C °C Vrms Module Case Operating Temperature (Note-1) Storage Temperature Tstg Isolation Voltage Viso 60Hz, Sinusoidal, Charged part to Base, AC 1 min. (Note-1) TC measurement point is below. (3mm depth at the center of the side of base plate) Tc ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted) INVERTER PART Symbol VCE(sat) VEC ton trr tc(on) toff tc(off) ICES Parameter Collector-Emitter Saturation Voltage FWDi Forward Voltage Test Condition VD = 15V, IC = 100A VCIN = 0V –IC = 100A, VD = 15V, VCIN = 15V VD = 15V, VCIN = 0V↔15V VCC = 600V, IC = 100A Tj = 125°C Inductive Load (upper and lower arm) VCE = VCES, VCIN = 15V Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Min. — — — 0.4 — — — — — — Limits Typ. 2.65 2.75 2.50 0.9 0.2 0.4 2.4 0.7 — — Max. 3.30 3.35 3.50 2.3 0.3 1.0 3.4 1.2 1 10 Unit V V Switching Time µs Collector-Emitter Cutoff Current mA CONTROL PART Symbol ID Vth(ON) Vth(OFF) SC toff(SC) OT OTr UV UVr IFO(H) IFO(L) tFO Parameter Circuit Current Input ON Threshold Voltage Input OFF Threshold Voltage Short Circuit Trip Level Short Circuit Current Delay Time Over Temperature Protection Supply Circuit Under-Voltage Protection Fault Output Current Minimum Fault Output Pulse Width Test Condition VD = 15V, VCIN = 15V VN1-VNC V*P1-V*PC Min. — — 1.2 1.7 145 — Trip level Reset level Trip level Reset level (Note-2) (Note-2) 111 — 11.5 — — — 1.0 Limits Typ. 40 13 1.5 2.0 — 10 118 100 12.0 12.5 — 10 1.8 Max. 55 18 1.8 2.3 — — 125 — 12.5 — 0.01 15 — Unit mA V A µs °C V mA ms Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC –20≤ Tj ≤ 125°C, VD = 15V VD = 15V Base-plate Temperature detection, VD = 15V –20 ≤ Tj ≤ 125°C VD = 15V, VFO = 15V VD = 15V (Note-2) Fault output is given only when the internal SC, OT & UV protection. Fault output of OT protection operate by lower arm Fault output of OT, UV protection given pulse while over level. Jun. 2005 MITSUBISHI PM100CVA120 FLAT-BASE TYPE INSULATED PACKAGE THERMAL RESISTANCES Symbol Rth(j-c)Q Rth(j-c)F Rth(c-f) Parameter Junction to case Thermal Resistances Contact Thermal Resistance Test Condition Inverter IGBT part (per 1/6 module) Inverter FWDi part (per 1/6 module) Case to fin, Thermal grease applied (per 1 module) Min. — — — Limits Typ. — — — Max. 0.231 0.35 0.022 Unit °C/W MECHANICAL RATINGS AND CHARACTERISTICS Symbol — — — Parameter Mounting torque Mounting torque Weight Mounting part Main terminal Test Condition screw : M5 screw : M5 Min. 2.5 2.5 — Limits Typ. 3.0 3.0 730 Max. 3.5 3.5 — Unit N•m N•m g RECOMMENDED CONDITIONS FOR USE Symbol VCC VD VCIN(ON) VCIN(OFF) tdead fPWM Parameter Supply Voltage Control Supply Voltage Input ON Voltage Input OFF Voltage Arm Shoot-through Blocking Time PWM Input Frequency Test Condition Applied across P-N terminals Applied between : VUP1-VUPC, VVP1-VVPC VWP1-VWPC, VN1-VNC (Note-3) Applied between : UP-VUPC, VP-VVPC, WP-VWPC UN • VN • WN-VNC For IPM’s each input signals Using Application Circuit input signal of IPM, 3φ Sinusoidal PWM VVVF inverter Recommended value ≤ 800 15 ± 1.5 ≤ 0.8 ≥ 4.0 ≥ 3.0 ≤ 20 Unit V V V µs kHz (Note-3) With ripple satisfying the following conditions dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak Jun. 2005 MITSUBISHI PM100CVA120 FLAT-BASE TYPE INSULATED PACKAGE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 140 COLLECTOR CURRENT IC (A) Tj = 25°C 120 VCIN = 0V 100 80 60 40 20 0 0 1 2 3 4 5 15V VD = 17V 13V 5 4 Tj = 25°C Tj = 125°C VD = 15V VCIN = 0V 3 2 1 0 0 20 40 60 80 100 120 140 160 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC(A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SWITCHING CHARACTERISTICS (TYPICAL) 101 7 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) SWITCHING TIME (µs) Tj = 25°C Tj = 125°C 5 IC = 100A VCIN = 0V 4 3 2 1 0 10 6 5 3 2 Tj = 125°C VCC = 600V VD = 15V Inductive load toff ton tc(off) tc(on) 100 7 5 3 2 12 14 16 18 20 10–1 1 10 2 3 5 7 102 2 3 5 7 103 CONTROL SUPPLY VOLTAGE VD(V) COLLECTOR CURRENT IC (A) COLLECTOR RECOVERY CURRENT –IC (A) DIODE FORWARD CHARACTERISTICS (TYPICAL) 102 7 5 3 2 DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT lrr (A) 2 2 102 7 5 3 2 lrr 100 7 5 3 2 101 7 5 3 2 101 7 5 VCC = 600V 3 2 trr 10–1 7 5 100 Tj = 25°C Tj = 125°C VD = 15V VCIN = 15V 0 0.5 1.0 1.5 2.0 2.5 3.0 VD = 15V Inductive load 5 7 101 2 3 5 7 102 Tj = 25°C 3 Tj = 125°C 2 3 5 2 EMITTER-COLLECTOR VOLTAGE VEC (V) COLLECTOR RECOVERY CURRENT –IC (A) Jun. 2005 REVERS RECOVERY TIME trr (µs) MITSUBISHI PM100CVA120 FLAT-BASE TYPE INSULATED PACKAGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT per 1 element) 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi per 1 element) 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) 100 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j – c) 7 Single Pulse 5 3 Per unit base = Rth(j – c)Q = 0.231°C/ W 2 7 5 3 2 7 5 3 2 7 5 3 2 7 Single Pulse 5 3 Per unit base = Rth(j – c)F = 0.35°C/ W 2 7 5 3 2 7 5 3 2 7 5 3 2 100 10–1 10–1 10–2 10–2 10–3 –3 10 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 TIME (s) 10–3 –3 10 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 TIME (s) Jun. 2005