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PM200DSA120

PM200DSA120

  • 厂商:

    MITSUBISHI

  • 封装:

  • 描述:

    PM200DSA120 - FLAT-BASE TYPE INSULATED PACKAGE - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
PM200DSA120 数据手册
MITSUBISHI INTELLIGENT POWER MODULES PM200DSA120 FLAT-BASE TYPE INSULATED PACKAGE A B H H E J Q S - DIA. (4 TYP.) C2E1 E2 C1 N 123 4 5 C D 123 45 P J N SIDE 1. VN1 2. SNR 3. CN1 4. VNC 5. FNO P SIDE 1. VP1 2. SPR 3. CP1 4. VPC 5. FPO N - DIA. (4 TYP.) P - M6 THD. (3 TYP.) K R (8 TYP.) T 0.64 MM SQ. PIN (10 TYP.) L K FG M VP1 C1 Description: Mitsubishi Intelligent Power Modules are isolated base modules designed for power switching applications operating at frequencies to 20kHz. Built-in control circuits provide optimum gate drive and protection for the IGBT and free-wheel diode power devices. Features: Complete Output Power Circuit VCC FPO SPR CP1 VPC FO TEMP OUT1 SR IN GND OUT2 SENS SINK VN1 C2E1 Gate Drive Circuit Protection Logic – Short Circuit – Over Current – Over Temperature – Under Voltage VCC FNO SNR CN1 VNC FO TEMP OUT1 SR IN GND OUT2 SENS SINK E2 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H J Inches 5.12 4.33±0.010 2.76 2.05±0.010 1.18 Millimeters 130.0 110.0±0.25 70.0 52.0±0.25 30.0 Dimensions K L M N P Q R S T Inches 0.55 0.51 0.28 0.26 Dia. M6 Metric 0.14 0.100 0.08 Dia. 0.016 Millimeters 14.0 13.0 7.0 Dia. 6.5 M6 3.5 2.54 Dia. 2.0 0.42 Applications: Inverters UPS Motion/Servo Control Power Supplies Ordering Information: Example: Select the complete part number from the table below -i.e. PM200DSA120 is a 1200V, 200 Ampere Intelligent Power Module. Type PM Current Rating Amperes 200 VCES Volts (x 10) 120 1.14 +0.04/-0.02 29.0 +1/-0.5 1.02 0.98 0.71 26.0 25.0 18.0 Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM200DSA120 FLAT-BASE TYPE INSULATED PACKAGE Absolute Maximum Ratings, Tj = 25°C unless otherwise specified Ratings Power Device Junction Temperature Storage Temperature Case Operating Temperature Mounting Torque, M6 Mounting Screws Mounting Torque, M6 Main Terminal Screws Module Weight (Typical) Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg TC — — — VCC(prot.) Viso PM200DSA120 -20 to 150 -40 to 125 -20 to 100 3.92~5.88 3.92~5.88 630 800 2500 Units °C °C °C N·m N·m Grams Volts Vrms Control Sector Supply Voltage (Applied between VP1-VPC, VN1-VNC) Input Voltage (Applied between CP1-VPC, CN1-VNC) Fault Output Supply Voltage (Applied between Fpo-Vpc and Fno-Vnc) Fault Output Current (Sink Current at FPO, FNO Terminal) VD VCIN VFO IFO 20 10 20 20 Volts Volts Volts mA IGBT Inverter Sector Collector-Emitter Voltage (VD = 15V, VCIN = 5V) Collector Current, (Tc = 25°C) Peak Collector Current, (Tc = 25°C) Supply Voltage (Applied between C1 - E2) Supply Voltage, Surge (Applied between C1 - E2) Collector Dissipation VCES IC ICP VCC VCC(surge) PC 1200 200 400 900 1000 1140 Volts Amperes Amperes Volts Volts Watts Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM200DSA120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Control Sector Over Current Trip Level Inverter Part Short Circuit Trip Level Inverter Part Over Current Delay Time Over Temperature Protection OC SC toff(OC) OT OTr Supply Circuit Under Voltage Protection UV UVr Supply Voltage Circuit Current VD ID Vth(on) Vth(off) fPWM IFO(H) IFO(L) Minimum Fault Output Pulse Width SXR Terminal Output Voltage tFO VSXR -20°C ≤ T ≤ 125°C, VD = 15V -20°C ≤ T ≤ 125°C, VD = 15V VD = 15V Trip Level Reset Level Trip Level Reset Level Applied between VP1-VPC, VN1-VNC VD = 15V, VCIN = 5V, VN1-VNC VD = 15V, VCIN = 5V, VXP1-VXPC Input ON Threshold Voltage Input OFF Threshold Voltage PWM Input Frequency Fault Output Current Applied between CP1-VPC, CN1-VNC 3-φ Sinusoidal VD = 15V, VFO = 15V VD = 15V, VFO = 15V VD = 15V Tj ≤125°C, Rin = 6.8 kΩ (SPR, SNR) 240 320 — 100 85 11.5 — 13.5 — — 1.2 1.7 — — — 1.0 4.5 360 540 5 110 95 12.0 12.5 15 23 23 1.5 2.0 15 — 10 1.8 5.1 — — — 120 105 12.5 — 16.5 30 30 1.8 2.3 20 0.01 15 — 5.6 Amperes Amperes µs °C °C Volts Volts Volts mA mA Volts Volts kHz mA mA ms Volts Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM200DSA120 FLAT-BASE TYPE INSULATED PACKAGE Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units IGBT Inverter Sector Collector Cutoff Current ICES VEC VCE(sat) VCE = VCES, Tj = 25°C VCE = VCES, Tj = 125°C Emitter-Collector Voltage Collector-Emitter Saturation Voltage -IC = 200A, VD = 15V, VCIN = 5V VD = 15V, VCIN = 0V, IC = 200A VD = 15V, VCIN = 0V, IC = 200A, Tj = 125°C Inductive Load Switching Times ton trr tC(on) toff tC(off) VD = 15V, VCIN = 0 ↔ 5V VCC = 600V, IC = 200A Tj = 125°C 0.5 — — — — 1.4 0.2 0.4 2.0 0.6 2.5 0.4 1.0 3.5 1.1 µs µs µs µs µs — — — — — — — 2.5 2.3 2.1 1 10 3.5 3.2 2.9 mA mA Volts Volts Volts Thermal Characteristics Characteristic Junction to Case Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)F Contact Thermal Resistance Rth(c-f) Condition Each IGBT Each FWDi Case to Fin Per Module, Thermal Grease Applied Min. — — — Typ. — — — Max. 0.11 0.18 0.038 Units °C/Watt °C/Watt °C/Watt Recommended Conditions for Use Characteristic Supply Voltage Symbol VCC VD Input ON Voltage Input OFF Voltage PWM Input Frequency Minimum Dead Time VCIN(on) VCIN(off) fPWM tdead Condition Applied across C1-E2 Terminals Applied between VP1-VPC, VN1-VNC Applied between CP1-VPC, CN1-VNC Using Application Circuit Input Signal Value 0 ~ 800 15 ± 1.5 0 ~ 0.8 Units Volts Volts Volts 4.0 ~ VSXR Volts 5 ~ 20 ≥ 3.5 kHz µs Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM200DSA120 FLAT-BASE TYPE INSULATED PACKAGE SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) 6 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat), (VOLTS) SATURATION VOLTAGE VCE(sat), (VOLTS) 5 COLLECTOR CURRENT, IC, (AMPERES) 360 VD = 15V VCIN = 0V Tj = 25oC Tj = 125oC 15 5 4 3 2 1 0 0 IC = 200A VCIN = 0V Tj = 25oC Tj = 125oC 4 280 VD = 17V 13 3 200 2 120 1 Tj = 25oC VCIN = 0V 0 12 14 16 18 20 22 0 80 160 240 320 SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE, VCE(sat), (VOLTS) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) REVERSE RECOVERY CURRENT VS. COLLECTOR CURRENT (TYPICAL) 101 101 VCC = 600V VD = 15V SWITCHING TIMES, tc(on), tc(off), (µs) 100 103 REVERSE RECOVERY CURRENT, Irr, (AMPERES) SWITCHING TIMES, ton, toff, (µs) Inductive Load toff ton Tj = 25oC Tj = 125oC REVERSE RECOVERY TIME, trr, (µs) trr 100 VCC = 600V VD = 15V Inductive Load 100 tc(off) tc(on) 10-1 Irr VCC = 600V VD = 15V Inductive Load 102 Tj = 25oC Tj = 125oC Tj = 25oC Tj = 125oC 10-1 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 10-1 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 10-2 101 101 102 103 COLLECTOR REVERSE CURRENT, IE, (AMPERES) DIODE FORWARD CHARACTERISTICS OVER CURRENT TRIP LEVEL VS. SUPPLY VOLTAGE (TYPICAL) OVER CURRENT TRIP LEVEL VS. TEMPERATURE (TYPICAL) COLLECTOR REVERSE CURRENT, -IC, (AMPERES) 103 OVER CURRENT TRIP LEVEL % (NORMALIZED) 120 OVER CURRENT TRIP LEVEL % (NORMALIZED) 140 TC = 25oC VD = 15V VCIN = 5V Tj = 25oC Tj = 125oC 100 120 102 80 100 60 80 101 40 60 VD = 15V 100 0 0.5 1.0 1.5 2.0 2.5 3.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 0 0 13 15 17 19 21 SUPPLY VOLTAGE, VD, (VOLTS) 0 0 40 80 120 160 JUNCTION TEMPERATURE, TC, (oC) Sep.1998 MITSUBISHI INTELLIGENT POWER MODULES PM200DSA120 FLAT-BASE TYPE INSULATED PACKAGE FAULT OUTPUT PULSE WIDTH VS. TEMPERATURE (TYPICAL) CONTROL SUPPLY VOLTAGE TRIP-RESET LEVEL TEMPERATURE DEPENDENCY (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each IGBT) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 140 FAULT OUTPUT PULSE WIDTH % (NORMALIZED) 14 VD = 15V UV UVr 101 120 UV TRIP-RESET LEVEL, UV, UVr, (VOLTS) 13 100 100 12 10-1 80 11 60 10 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)Q = 0.11oC/W 0 0 40 80 120 160 JUNCTION TEMPERATURE, TC, (oC) 0 0 40 80 120 160 JUNCTION TEMPERATURE, TC, (oC) 10-3 10-3 10-2 10-1 TIME, (s) 100 101 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (Each FWDi) TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE) 101 100 10-1 10-2 SINGLE PULSE STANDARD VALUE = Rth(j-c)F = 0.18oC/W 10-3 10-3 10-2 10-1 TIME, (s) 100 101 Sep.1998
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