RD06HHF1

MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 9.1+/-0.7 1.3+/-0.4 3.6+/-0.2 Silicon MOSFET Power Transistor 30MHz,6W DESCRIPTION RD06HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications. OUTLINE DRAWING 3.2+/-0.4 4.8MAX 9+/-0.4 •High power gain: Pout>6W, Gp>16dB @Vdd=12.5V,f=30MHz 12.3+/-0.6 FEATURES 2 For output stage of high power amplifiers in HF band mobile radio sets. 12.3MIN APPLICATION 1.2+/-0.4 0.8+0.10/-0.15 123 0.5+0.10/-0.15 2.5 2.5 3.1+/-0.6 4.5+/-0.5 5deg PIN 1.Gate 2.Source 3.Drain UNIT:mm 9.5MAX ABSOLUTE MAXIMUM RATINGS (Tc=25°C UNLESS OTHERWISE NOTED) SYMBOL VDSS VGSS Pch Pin ID Tch Tstg Rth j-c PARAMETER Drain to source voltage Gate to source voltage Channel dissipation Input power Drain current Channel temperature Storage temperature Thermal resistance CONDITIONS Vgs=0V Vds=0V Tc=25°C Zg=Zl=50Ω junction to case RATINGS UNIT 50 V +/- 20 V 27.8 W 0.3 W 3 A °C 150 -40 to +150 °C °C/W 4.5 Note 1: Above parameters are guaranteed independently. ELECTRICAL CHARACTERISTICS (Tc=25°C, UNLESS OTHERWISE NOTED) SYMBOL IDSS IGSS VTH Pout ηD PARAMETER Zero gate voltage drain current Gate to source leak current Gate threshold Voltage Output power Drain efficiency Load VSWR tolerance CONDITIONS VDS=17V, VGS=0V VGS=10V, VDS=0V VDS=12V, IDS=1mA VDD=12.5V, Pin=0.15W, f=30MHz, Idq=0.5A VDD=15.2V,Po=6W(Pin Control) f=30MHz,Idq=0.5A,Zg=50Ω Load VSWR=20:1(All Phase) MIN 1.9 6 55 LIMITS TYP MAX. 10 1 4.9 10 65 No destroy UNIT uA uA V W % - Note : Above parameters , ratings , limits and conditions are subject to change. RD06HHF1 MITSUBISHI ELECTRIC 1/7 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 Vgs-Ids CHARACTERISTICS 5 4 3 2 1 0 Ta=+25°C Vds=10V Silicon MOSFET Power Transistor 30MHz,6W TYPICAL CHARACTERISTICS CHANNNEL DISSIPATION VS. AMBIENT TEMPERATURE 50 CHANNEL DISSIPATION Pch(W) 40 20 10 0 0 40 80 120 160 200 AMBIENT TEMPERATURE Ta(°C) Ids(A) 30 0 2 4 6 Vgs(V) 8 10 Vds-Ids CHARACTERISTICS 4 Ta=+25°C Vgs=10V Vds VS. Ciss CHARACTERISTICS 60 50 Ciss(pF) 40 30 20 10 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz 3 Ids(A) Vgs=9V Vgs=8V 2 Vgs=7V 1 Vgs=6V Vgs=5V 0 0 2 4 6 Vds(V) 8 10 Vds VS. Coss CHARACTERISTICS 100 80 Coss(pF) 60 40 20 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz Vds VS. Crss CHARACTERISTICS 10 8 Crss(pF) 6 4 2 0 0 10 Vds(V) 20 30 Ta=+25°C f=1MHz RD06HHF1 MITSUBISHI ELECTRIC 2/7 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 Pin-Po CHARACTERISTICS 100 Po Silicon MOSFET Power Transistor 30MHz,6W TYPICAL CHARACTERISTICS Pin-Po CHARACTERISTICS 50 40 30 20 10 Ｉｄｄ Gp Ta=+25°C f=30MHz Vdd=12.5V Idq=0.5A 100 Po 14 12 Pout(W) , Idd(A) 10 ηd Po(dBm) , Gp(dB) , Idd(A) 80 ηｄ 90 80 ηd(%) 70 ηd(%) 60 40 20 0 8 6 4 2 0 0.0 0.1 Pin(W) 0.2 0.3 Idd Ta=25°C f=30MHz Vdd=12.5V Idq=0.5A 60 50 40 30 0 -10 0 10 Pin(dBm) 20 Vdd-Po CHARACTERISTICS 16 14 12 Po(W) 10 8 6 4 2 0 4 6 8 10 Vdd(V) 12 14 0 0 Idd Ta=25°C f=30MHz Pin=0.15W Idq=0.5A Zg=ZI=50 ohm Vgs-Ids CHARACTORISTICS 2 4 5 4 Ids(A),GM(S) 3 2 1 Vds=10V Tc=-25~+75°C -25°C +75°C +25°C 3 Po 2 1 Idd(A) 0 2 4 6 Vgs(V) 8 10 Vgs-gm CHARACTORISTICS 2.0 Vds=10V Tc=-25~+75°C 1.5 gm(S) 1.0 -25°C +25°C 0.5 +75°C 0.0 0 1 2 3 456 Vgs(V) 7 8 9 RD06HHF1 MITSUBISHI ELECTRIC 3/7 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 Silicon MOSFET Power Transistor 30MHz,6W TEST CIRCUIT(f=30MHz) Vgg Vdd 330uF,50V L2 8.2KOHM C1 84pF 1KOHM C2 RF-IN 220pF 150/120pF 56pF L3 L4 1OHM C1 C1 220pF 100pF 10uF,50V*3 C1 L1 56pF 30pF L5 L6 C2 RF-OUT 100pF 200/200pF 100pF 5 16 35 46 65 85 76 91 100 1.5 18 36 42 45 45 67 75 91 100 C1:100pF,0.022uF,0.1uF in parallel C2:470uF*2 in parallel L1:10Turns,I.D8mm,D0.9mm copper wire L2:10Turns,I.D6mm,D1.6mm silver plated copper wire L3:5Turns,I.D5.6mm,D0.9mm copper wire L4:6Turns,I.D5.6mm,D0.9mm copper wire L5:4Turns,I.D5.6mm,D0.9mm copper wire P=0.5mm L6:7Turns,I.D5.6mm,D0.9mm copper wire Dimensions:mm Note:Board material- teflon substrate micro strip line width=4.2mm/50OHM,er:2.7,t=1.6mm / RD06HHF1 MITSUBISHI ELECTRIC 4/7 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 Zo=50ohm Silicon MOSFET Power Transistor 30MHz,6W INPUT/OUTPUT IMPEDANCE VS.FREQUENCY CHARACTERISTICS f=30MHz Zout f=30MHz Zin Zin , Zout f (MHz) 30 Zin (ohm) 65.06-j150.9 Zout (ohm) 8.75-j4.92 Conditions Po=10W, Vdd=12.5V,Pin=0.15W RD06HHF1 MITSUBISHI ELECTRIC 5/7 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 S12 (mag) 0.008 0.021 0.029 0.032 0.032 0.029 0.027 0.027 0.031 0.039 0.048 0.059 0.070 0.083 0.095 0.108 0.120 0.133 0.145 0.157 0.167 0.179 (ang) 76.2 59.4 43.2 27.3 23.1 25.3 34.5 49.1 61.8 71.0 75.8 77.9 76.9 76.1 73.7 71.0 68.1 65.0 61.6 58.2 54.5 51.0 (mag) 0.826 0.767 0.677 0.547 0.523 0.528 0.561 0.588 0.622 0.657 0.686 0.715 0.743 0.763 0.789 0.804 0.820 0.837 0.847 0.858 0.869 0.876 S22 (ang) -17.3 -43.6 -65.0 -96.8 -113.4 -124.7 -132.7 -139.6 -145.9 -151.7 -157.0 -162.3 -167.6 -172.3 -177.3 178.1 173.5 169.0 164.8 160.2 155.7 151.8 Silicon MOSFET Power Transistor 30MHz,6W RD06HHF1 S-PARAMETER DATA (@Vdd=12.5V, Id=500mA) Freq. [MHz] 10 30 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 S11 (mag) 0.985 0.900 0.799 0.667 0.636 0.630 0.645 0.663 0.685 0.708 0.729 0.752 0.771 0.789 0.804 0.819 0.834 0.842 0.851 0.859 0.866 0.870 (ang) -18.8 -50.4 -74.4 -109.6 -129.0 -140.1 -148.2 -155.0 -160.7 -165.9 -170.8 -175.4 179.9 175.4 171.2 166.9 162.6 158.5 154.3 150.3 146.2 142.3 S21 (mag) (ang) 34.407 165.9 30.427 143.3 24.979 126.1 15.565 100.7 10.953 85.1 8.194 73.7 6.528 63.9 5.315 55.2 4.437 47.4 3.771 39.9 3.233 33.2 2.826 26.8 2.475 20.7 2.186 15.2 1.943 9.7 1.738 4.6 1.560 0.0 1.410 -4.5 1.275 -8.7 1.160 -12.6 1.058 -16.9 0.963 -20.0 RD06HHF1 MITSUBISHI ELECTRIC 6/7 REV.5 2 APRIL. 2004 MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD06HHF1 Silicon MOSFET Power Transistor 30MHz,6W Keep safety first in your circuit designs! Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. warning ! Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. These results causes in fire or injury. RD06HHF1 MITSUBISHI ELECTRIC 7/7 REV.5 2 APRIL. 2004