RM100DZ

MITSUBISHI DIODE MODULES RM100DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE RM100DZ/CZ-M,-H • IF(AV) • VRRM Average forward current .......... 100A Repetitive peak reverse voltage ................ 400/800V • DOUBLE ARMS • Insulated Type • UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 2–φ6.5 12.5 26 (DZ) A1K2 SR1 K1 SR2 A2 17.5 20 20 3–M5 (CZ) A1 SR1 K1K2 SR2 A2 6.5 LABEL 21 30 Feb.1999 MITSUBISHI DIODE MODULES RM100DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Reverse DC voltage Voltage class M 400 480 320 H 800 960 640 Unit V V V Symbol IF (RMS) IF (AV) IFSM I2t f Tj Tstg Viso Parameter RMS forward current Average forward current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=115°C One half chcle at 60Hz, peak value Value for one cycle of surge current Ratings 157 100 2000 1.7 × 104 1000 –40~+150 –40~+125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 Unit A A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Tj=150°C, VRRM applied Tj=25°C, IFM=320A, instantaneous meas. Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — — 10 Typ. — — — — — Max. 20 1.25 0.3 0.2 — Unit mA V °C/ W °C/ W MΩ Feb.1999 MITSUBISHI DIODE MODULES RM100DZ/CZ-M,-H HIGH POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.4 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 2000 Tj=25°C SURGE (NON-REPETITIVE) FORWARD CURRENT (A) FORWARD CURRENT (A) 1600 1200 800 400 0.8 1.2 1.6 2.0 2.4 0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 160 140 TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.40 0.35 RESISTIVE, INDUCTIVE LOAD SINGLE-PHASE OPERATION THREE-PHASE OPERATION DC OPERATION POWER DISSIPATION (W) 0.30 0.25 0.20 0.15 0.10 0.05 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160 TIME (s) AVERAGE FORWARD CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. AVERAGE FORWARD CURRENT 160 RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) 140 DC OPERATION 120 100 SINGLE PHASE OPERATION THREE-PHASE OPERATION 0 20 40 60 80 100 120 140 160 80 60 AVERAGE FORWARD CURRENT (A) Feb.1999