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RM30TB-H

RM30TB-H

  • 厂商:

    MITSUBISHI

  • 封装:

  • 描述:

    RM30TB-H - MEDIUM POWER GENERAL USE INSULATED TYPE - Mitsubishi Electric Semiconductor

  • 数据手册
  • 价格&库存
RM30TB-H 数据手册
MITSUBISHI DIODE MODULES RM30TB-H MEDIUM POWER GENERAL USE INSULATED TYPE RM30TB-H q q IO VRRM q q q DC output current ....................... 60A Repetitive peak reverse voltage ................ 800V 3 phase bridge Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, DC motor controllers, Battery DC power supplies, DC power supplies for control panels, and other general DC power equipment OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 14.5 28 10 2–φ4.5 8 13.5 15 57 70 16 5–M4 20 40 22 24 LABEL 6 Mar.2002 MITSUBISHI DIODE MODULES RM30TB-H MEDIUM POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM Ea Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage Recommended AC input voltage Voltage class H 800 960 220 Unit V V V Symbol IO IFSM I2t f Tj Tstg Viso Parameter DC output current Surge (non-repetitive) forward current I2t for fusing Maximum operating frequency Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M4 Conditions Three-phase full wave rectifying circuit, TC=105°C One half cycle at 60Hz, peak value Value for one cycle of surge current Ratings 60 1000 4.2 × 103 1000 –40~+150 –40~+125 2000 0.98~1.47 10~15 0.98~1.47 10~15 100 Unit A A A2s Hz °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M4 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM VFM Rth (j-c) Rth (c-f) — Parameter Repetitive reverse current Forward voltage Thermal resistance Contact thermal resistance Insulation resistance Test conditions Tj=150°C, VRRM applied Tj=25°C, IFM=100A, instantaneous meas. Junction to case Case to fin, conductive grease applied Measured with a 500V megohmmeter between main terminal and case Min. — — — — 10 Typ. — — — — — Max. 10 1.3 0.31 0.09 — Unit mA V °C/ W °C/ W MΩ Mar.2002 MITSUBISHI DIODE MODULES RM30TB-H MEDIUM POWER GENERAL USE INSULATED TYPE PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.6 ALLOWABLE SURGE (NON-REPETITIVE) FORWARD CURRENT 1000 Tj=25°C SURGE (NON-REPETITIVE) FORWARD CURRENT (A) FORWARD CURRENT (A) 800 600 400 200 0 1.0 1.4 1.8 2.2 2.6 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLES AT 60Hz) MAXIMUM POWER DISSIPATION 160 TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 7 10 1 0.32 RESISTIVE, INDUCTIVE LOAD POWER DISSIPATION (W) 0.28 0.24 0.20 0.16 0.12 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 0.08 0.04 0 10 –3 2 3 5 7 10 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) DC OUTPUT CURRENT (A) ALLOWABLE CASE TEMPERATURE VS. DC OUTPUT CURRENT 150 RESISTIVE, INDUCTIVE LOAD CASE TEMPERATURE (°C) 140 130 120 110 100 90 80 70 0 10 20 30 40 50 60 70 80 DC OUTPUT CURRENT (A) Mar.2002
RM30TB-H 价格&库存

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