TM90RZ-24

MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE TM90RZ/EZ-24,-2H • IT (AV) • IF (AV) • VRRM • • • • Average on-state current ............ 90A Average forward current ............ 90A Repetitive peak reverse voltage .... 1200/1600V VDRM Repetitive peak off-state voltage .... 1200/1600V MIX DOUBLE ARMS Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION DC motor control, NC equipment, AC motor control, contactless switches, electric furnace temperature control, light dimmers OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 93.5 80 2–φ6.5 (RZ) 13 26 A1K2 CR K1 SR A2 K1 G1 K1 G1 16.5 23 23 3–M5 Tab#110, t=0.5 (EZ) A1 CR K1K2 SR A2 K1 G1 9 6.5 LABEL 21 30 Feb.1999 MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VRRM VRSM VR (DC) VDRM VDSM VD (DC) Parameter Repetitive peak reverse voltage Non-repetitive peak reverse voltage DC reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage DC off-state voltage Voltage class 24 1200 1350 960 1200 1350 960 2H 1600 1700 1280 1600 1700 1280 Unit V V V V V V Symbol IT (RMS), IF (RMS) IT (AV), IF (AV) ITSM, IFSM I2t di/dt PGM PG (AV) VFGM VRGM IFGM Tj Tstg Viso Parameter RMS current Average current Surge (non-repetitive) current I2t for fusing Critical rate of rise of on-state current Peak gate power dissipation Average gate power dissipation Peak gate forward voltage Peak gate reverse voltage Peak gate forward current Junction temperature Storage temperature Isolation voltage Charged part to case Main terminal screw M5 Conditions Single-phase, half-wave 180° conduction, TC=82°C One half cycle at 60Hz, peak value Value for one cycle of surge current VD=1/2VDRM, IG=1.0A, Tj=125°C Ratings 140 90 1800 1.4 × 104 100 5.0 0.5 10 5.0 2.0 –40~125 –40~125 2500 1.47~1.96 15~20 1.96~2.94 20~30 160 Unit A A A A2s A/µs W W V V A °C °C V N·m kg·cm N·m kg·cm g — Mounting torque Mounting screw M6 — Weight Typical value ELECTRICAL CHARACTERISTICS Limits Symbol IRRM IDRM VTM, VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) — Parameter Repetitive peak reverse current Repetitive peak off-state current Forward voltage Critical rate of rise of off-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Thermal resistance Contact thermal resistance Insulation resistance Tj=125°C, VRRM applied Tj=125°C, VDRM applied Tj=125°C, ITM=IFM=270A, instantaneous meas. Tj=125°C, VD=2/3VDRM Tj=25°C, VD=6V, RL=2Ω Tj=125°C, VD=1/2VDRM Tj=25°C, VD=6V, RL=2Ω Junction to case (per 1/2 module) Case to fin, conductive grease applied (per 1/2 module) Measured with a 500V megohmmeter between main terminal and case Test conditions Min. — — — 500 — 0.25 15 — — 10 Typ. — — — — — — — — — — Max. 15 15 1.4 — 2.0 — 100 0.3 0.2 — Unit mA mA V V/µs V V mA °C/ W °C/ W MΩ Note: Items of the above table applies to the Thyristor part and the Diode part as circled in the following tables. Feb.1999 MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM RATINGS Item Thyristor Diode — — — — VRRM VRSM VR (DC) VDRM VDSM VD (DC) IT (RMS) IF (RMS) IT (AV) IF (AV) ITSM IFSM I2t di/dt Item Thyristor Diode PGM PG (AV) VFGM IFGM Tj Tstg — — — — ELECTRICAL CHARACTERISTICS Item Thyristor Diode — — — — — IRRM IDRM VTM VFM dv/dt VGT VGD IGT Rth (j-c) Rth (c-f) PERFORMANCE CURVES MAXIMUM FORWARD CHARACTERISTIC 10 3 7 5 3 2 CURRENT (A) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.8 2000 Tj=125°C SURGE (NON-REPETITIVE) CURRENT (A) 1600 RATED SURGE (NON-REPETITIVE) CURRENT 1200 800 400 1.0 1.2 1.4 1.6 1.8 0 1 23 5 7 10 20 30 50 70100 FORWARD VOLTAGE (V) CONDUCTION TIME (CYCLE AT 60Hz) GATE CHARACTERISTICS 4 3 2 10 1 GATE VOLTAGE (V) VFGM=10V PGM=5.0W IFGM=2.0A TRANSIENT THERMAL IMPEDANCE (°C/W) MAXIMUM TRANSIENT THERMAL IMPEDANCE (JUNCTION TO CASE) 10 0 2 3 5 710 1 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10 –3 2 3 5 710 –2 2 3 5 7 10 –1 2 3 5 7 10 0 TIME (s) 7 5 VGT=3.0V PG(AV)= 3 0.50W 2 0 IGT= 10 100mA 7 5 Tj=25°C 3 2 VGD=0.25V 10 –1 7 5 410 1 2 3 5 7 10 2 2 3 5 7 10 3 2 3 5 7 10 4 GATE CURRENT (mA) Feb.1999 MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM AVERAGE POWER DISSIPATION (SINGLE PHASE HALFWAVE) AVERAGE POWER DISSIPATION (W) 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 CASE TEMPERATURE (°C) θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT LIMITING VALUE OF THE AVERAGE CURRENT (SINGLE PHASE HALFWAVE) 130 120 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 180° 120° 90° 60° θ=30° 110 100 90 80 70 60 50 0 20 40 60 θ=30° 60° 90° 120° 180° 80 100 AVERAGE CURRENT (A) AVERAGE CURRENT (A) AVERAGE POWER DISSIPATION (W) 160 140 120 100 80 60 40 20 0 0 20 MAXIMUM AVERAGE POWER DISSIPATION (RECTANGULAR WAVE) 270° DC CASE TEMPERATURE (°C) 180° 120° 90° 60° θ=30° θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT LIMITING VALUE OF THE AVERAGE CURRENT (RECTANGULAR WAVE) 130 120 110 100 90 80 70 60 50 0 20 40 60 80 100 120 140 160 θ=30° 60° 90° 180° 120° 270° DC θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE ELEMENT 40 60 80 100 120 140 160 AVERAGE CURRENT (A) AVERAGE CURRENT (A) AVERAGE POWER DISSIPATION (W) 240 200 160 120 80 40 0 0 CASE TEMPERATURE (°C) MAXIMUM AVERAGE POWER DISSIPATION (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 320 θ 280 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE LIMITING VALUE OF THE RMS CURRENT (REVERSE-PARALLEL CONNECTION, THREE-PHASE THREE-LINE CONNECTION) 130 120 110 100 90 80 70 60 θ 360° RESISTIVE, INDUCTIVE LOAD PER SINGLE MODULE ° 80 =1 ° θ0 12 ° 90 ° 60 ° 30 θ=30° 60°,90° 180°,120° θ 40 80 120 160 200 50 0 40 80 120 160 200 RMS CURRENT (A) RMS CURRENT (A) Feb.1999 MITSUBISHI THYRISTOR MODULES TM90RZ/EZ-24,-2H HIGH VOLTAGE HIGH POWER GENERAL USE INSULATED TYPE MAXIMUM POWER DISSIPATION (SINGLE PHASE FULLWAVE RECTIFIED) 320 280 240 120° 200 160 120 80 40 0 0 40 80 120 θθ 360° RESISTIVE, INDUCTIVE LOAD LIMITING VALUE OF THE DC OUTPUT CURRENT (SINGLE PHASE FULLWAVE RECTIFIED) 130 120 CASE TEMPERATURE (°C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) 180° 90° 60° θ=30° 110 100 90 80 70 60 θ=30° θθ 360° RESISTIVE, INDUCTIVE LOAD 60° 90° 120° 180° 160 200 50 0 40 80 120 160 200 DC OUTPUT CURRENT (A) (PER TWO MODULES) MAXIMUM POWER DISSIPATION (THREE-PHASE FULLWAVE RECTIFIED) 320 280 CASE TEMPERATURE (°C) (PER SINGLE MODULE) POWER DISSIPATION (W) (PER SINGLE MODULE) 240 200 160 120 80 40 0 0 40 θ 360° RESISTIVE, INDUCTIVE LOAD DC OUTPUT CURRENT (A) (PER TWO MODULES) LIMITING VALUE OF THE DC OUTPUT CURRENT (THREE-PHASE FULLWAVE RECTIFIED) 130 120 90° 120° 60° θ=30° 110 100 90 80 70 60 50 θ 360° RESISTIVE, INDUCTIVE LOAD θ=30° 60° 90° 120° 80 120 160 200 240 280 320 0 40 80 120 160 200 240 280 320 DC OUTPUT CURRENT (A) (PER THREE MODULES) DC OUTPUT CURRENT (A) (PER THREE MODULES) Feb.1999