V62C2802048LL-55T

V62C2802048L(L) Ultra Low Power 256K x 8 CMOS SRAM Features • Low-power consumption - Active: 35mA at 55ns - Stand-by: 10 µA (CMOS input/output) 2 µA CMOS input/output, L version • Single +2.2 to 2.7V Power Supply_Typical • Extented Voltage from 2.2 to 3.6V. • Equal access and cycle time • 55/70/85/100 ns access time • Easy memory expansion with CE1, CE2 and OE inputs • 1.0V data retention mode • TTL compatible, Tri-state input/output • Automatic power-down when deselected • Package available: 32L TSOP(I)/ STSOP(I) • 48 Ball CSP_BGA Functional Description The V62C2802048L is a low power CMOS Static RAM organized as 262,144 words by 8 bits. Easy memory expansion is provided by an active LOW CE1, an active HIGH CE2, an active LOW OE , and Tri-state I/O’s. This device has an automatic power-down mode feature when deselected. Writing to the device is accomplished by taking Chip Enable 1 (CE1) with Write Enable (WE) LOW, and Chip Enable 2 (CE2) HIGH. Reading from the device is performed by taking Chip Enable 1 (CE1) with Output Enable (OE) LOW while Write Enable (WE) and Chip Enable 2 (CE2) is HIGH. The I/O pins are placed in a high-impedance state when the device is deselected: the outputs are disabled during a write cycle. TheV62C2802048LL comes with a 1V data retention feature and Lower Standby Power. The V62C2802048L is avalable in a 32-pin 8 x 20 mm TSOP1 / STSOP 8x13.4 mm and CSP type 48-fpBGA packages. Logic Block Diagram 32-Pin TSOP1 / STSOP (CSP_BGA See next page) A11 A9 A8 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O8 I/O7 I/O6 I/O5 I/O4 GND I/O3 I/O2 I/O1 A0 A1 A2 A3 INPUT BUFFER ROW DECODER SENSE AMP A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A13 WE CE2 I/O8 A15 Vcc A17 A16 A14 A12 A7 A6 A5 A4 Cell Array I/O1 COLUMN DECODER A10 A 11 A12 A 13 A 14 A 15 A 16 A 17 CONTROL CIRCUIT OE WE CE1 CE2 1 REV. 1.2 May 2001 V62C2802048L(L) V62C2802048L(L) MOSEL VITELIC 1 2 3 4 V62C2802048L(L)B 5 6 1 2 3 4 5 6 A B A0 A1 CS2 A3 A6 A8 I/O5 A2 WE A4 A7 I/O1 C I/O6 NC NC A5 NC I/O2 D E VSS NC NC NC NC VCC VCC NC NC NC NC VSS F G H I/O7 NC NC A17 NC I/O3 I/O8 A9 OE A10 CS1 A11 A16 A12 A15 A13 I/O4 A14 Note: NC means no Ball. Top View Top View 48 Ball - 9x12 fpBGA (Ultra Low Power) C A1 PACKAGE OUTLINE DWG. SYMBOL A UNIT:MM 1.05+0.15 0.25+0.05 0.35+.05 0.30(TYP) 12.00+0.10 5.25 9.00+0.10 3.75 0.75TYP 0.10 A aaa SIDE VIEW A1 b c D D1 D D1 E 6 e E1 e 5 aaa E1 4 3 2 1 A B C D E F G H BOTTOM VIEW b SOLDER BALL 2 REV. 1.2 May 2001 V62C2802048L(L) E V62C2802048L(L) Absolute Maximum Ratings * Parameter Voltage on Any Pin Relative to Gnd Power Dissipation Storage Temperature (Plastic) Temperature Under Bias Symbol Vt PT Tstg Tbias Minimum -0.5 − -55 -40 Maximum 3.6 1.0 +150 +85 Unit V W 0C 0 C * Note: Stresses greater than those listed above Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Truth Table CE1 H X L L L CE2 X L H H H WE X X H H L OE X X L H X Data High-Z High-Z Data Out High-Z Data In Standby Standby Active, Read Mode Active, Output Disable Active, Write * Key: X = Don’t Care, L = Low, H = High Recommended Operating Conditions (TA = 00C to +700C / -400C to 850C**) Parameter Supply Voltage Symbol VCC Gnd VIH VIL Min 2.2 0.0 2.0 -0.5* Typ 2.5 0.0 - Max 2.7 0.0 VCC + 0.2 0.6 Unit V V V V Input Voltage * VIL min = -1.0V for pulse width less than tRC/2. ** For Industrial Temperature 3 REV. 1.2 May 2001 V62C2802048L(L) V62C2802048L(L) DC Operating Characteristics (Vcc = 2.2~2.7V, Gnd = 0V, TA = 00C to +700C / -400C to 850C) Parameter Input Leakage Current Output Leakage Current Operating Power Supply Current Average Operating Current Sym Test Conditions Vcc = Max, Vin = Gnd to Vcc CE1 = VIH or CE2 = VIL Vcc= Max, VOUT = Gnd to Vcc CE1 = VIL , CE2 = VIH VIN = VIH or VIL , IOUT = 0 mA CE1 = VIL , CE2 = VIH IOUT = 0mA, Min Cycle, 100% Duty CE1 = 0.2V, CE2 = Vcc - 0.2V IOUT = 0mA, -55 1 1 3 35 - -70 1 1 3 30 - -85 1 1 3 25 - -100 1 1 3 20 Min Max Min Max Min Max Min Max Unit µA µA mA IILII IILOI ICC ICC1 mA ICC2 - 3 - 3 - 3 - 3 mA Cycle Time=1µs, 100% Duty Standby Power Supply Current (TTL Level) Standby Power Supply Current (CMOS Level) Output Low Voltage Output High Voltage ISB ISB1 CE1 = VIH or CE2 = VIL CE1 > Vcc - 0.2V or CE2 < 0.2V, f = 0 VIN < 0.2V or VIN > Vcc- 0.2V IOL = 2 mA IOH = -2 mA - 0.5 10 2 0.4 - 2.0 0.5 10 2 0.4 - 2.0 0.5 10 2 0.4 - 2.0 0.5 10 2 0.4 - mA µA µA V V L 2.0 VOL VOH Capacitance (f = 1MHz, TA = 250C) Parameter* Symbol Input Capacitance I/O Capacitance Test Condition Vin = 0V Vin = Vout = 0V Max 7 8 Unit pF pF Cin CI/O * This parameter is guaranteed by device characterization and is not production tested. AC Test Conditions Input Pulse Level 0.6V to 2.2V 5ns TTL Input Rise and Fall Time Input and Output Timing Reference Level CL* 1.4V Output Load Condition 70ns/85 ns C L Figure A. * Including Scope and Jig Capacitance = 30pf + 1TTL Load Load 100ns/120 ns CL= 100pf + 1TTL Load 4 REV. 1.2 May 2001 V62C2802048L(L) V62C2802048L(L) Read Cycle (3,9) (Vcc = 2.2~2.7V, Gnd = 0V, TA = 00C to +700C / -400C to +850C) Parameter Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Output Hold from Address Change Chip Enable to Output in Low-Z Chip Disable to Output in High-Z Output Enable to Output in Low-Z Output Disable to Output in High-Z Power-Up Time Power-Down Time Symbol tRC tAA tACE tOE tOH tCLZ tCHZ tOLZ tOHZ tPU tPD 55 10 10 5 0 - -55 55 55 35 25 25 55 70 10 10 5 0 - -70 70 70 40 30 25 70 85 10 10 5 0 - -85 85 85 40 35 30 85 -100 100 10 10 5 0 100 100 50 40 35 100 Unit ns ns ns ns ns ns ns ns ns ns ns Note Min Max Min Max Min Max Min Max 4,5 4,5 4,5 4,5 5 5 Write Cycle (3,11) (Vcc = 2.2~2.7V, Gnd = 0V, TA = 00C to +700C / -400C to +850C) Parameter Write Cycle Time Chip Enable to Write End Address Setup to Write End Address Setup Time Write Pulse Width Write Recovering Time Data Valid to Write End Data Hold Time Write Enable to Output in High-Z Output Active from Write End Symbol tWC tCW tAW tAS tWP tWR tDW tDH tWZ tOW 55 45 45 0 45 0 25 0 5 -55 -70 -85 -100 Unit ns ns ns ns ns ns ns ns ns ns Note Min Max Min Max Min Max Min Max 25 70 60 60 0 50 0 30 0 5 30 85 70 70 0 60 0 35 0 5 35 100 80 80 0 70 0 40 0 5 40 - 4,5 4,5 5 REV. 1.2 May 2001 V62C2802048L(L) V62C2802048L(L) Timing Waveform of Read Cycle 1(Address Controlled) (3,6,7,9) t RC Address tAA DOUT tOH Data Valid Timing Waveform of Read Cycle 2(CE1 Controlled)(5,6,8,9) tRC CE1 tOE tOLZ tACE DOUT tCLZ Supply Current OE tOHZ tCHZ Data Valid tPD ICC 50% 50% tPU ISB Timing Waveform of Read Cycle 3(CE2 Controlled) (3,6,8,9) tRC CE2 OE tOLZ tACE DOUT tCLZ Supply Current tOE tOHZ tCHZ Data Valid tPD ICC 50% 50% tPU ISB 6 REV. 1.2 May 2001 V62C2802048L(L) V62C2802048L(L) Timing Waveform of Write Cycle 1 (WE Controlled)(10,11) tAW tWC tWR Address WE tAS DIN tWZ DOUT tWP tDW Data Valid tOW tDH Timing Waveform of Write Cycle 2 tAW Address tAS CE1 WE tWZ DIN DOUT tCW (CE1 Controlled) (10,11) tWC tWR tWP tDW tDH Data Valid Timing Waveform of Write Cycle 3 tAW Address tAS CE2 tCW (CE2 Controlled) (10,11) tWC tWR tWP WE tWZ DIN DOUT tDW tDH Data Valid REV. 1.2 May 2001 V62C2802048L(L) 7 V62C2802048L(L) Data Retention Characteristics (L Version Only)(1) Parameter VCC for Data Retention Data Retention Current Chip Deselect to Data Retention Time Operation Recovery Time(2) Symbol VDR ICCDR tCDR tR Test Condition CE1 > VCC - 0.2V or CE2 < + 0.2V VIN > VCC - 0.2V or VIN < 0.2V Min 1.0 0 tRC Max - Unit V µA ns ns 1 - Data Retention Waveform (L Version Only) (TA = 00C to +700C / -400C to +850C) Data Retention Mode VCC Vcc Typ VDR > 1.0V Vcc Typ tCDR CE VDR tR VIH VIH Notes 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. L-version includes this feature. This Parameter is samples and not 100% tested. For test conditions, see AC Test Condition, Figure A. This parameter is tested with CL = 5pF as shown in Figure B. Transition is measured + 500mV from steady-state voltage. This parameter is guaranteed, but is not tested. WE is HIGH for read cycle. CE1 and OE are LOW and CE2 is HIGH for read cycle. Address valid prior to or coincident with CE1 transition LOW or CE2 transition HIGH. All read cycle timings are referenced from the last valid address to the first transtion address. CE1 or WE must be HIGH or CE2 must be LOW during address transition. All write cycle timings are referenced from the last valid address to the first transition address. 8 REV. 1.2 May 2001 V62C2802048L(L) V62C2802048L(L) Ordering Information Device Type* V62C2802048L-55T V62C2802048L-70T V62C2802048L-85T V62C2802048L-100T V62C2802048LL-55T V62C2802048LL-70T V62C2802048LL-85T V62C2802048LL-100T V62C2802048L(L)-55V V62C2802048L(L)-70V V62C2802048L(L)-85V V62C2802048L(L)-100V V62C2802048L(L)-55B V62C2802048L(L)-70B V62C2802048L(L)-85B V62C2802048L(L)-100B Speed 55 ns 70 ns 85 ns 100 ns 55 ns 70 ns 85 ns 100 ns 55 ns 70 ns 85 ns 100 ns 55 ns 70 ns 85 ns 100 ns 8 x 13.4 mm 32-pin Plastic STSOP Package 8 x 20 mm 32-pin Plastic TSOP1 48-fpBGA * For Industrial Temperature tested devices, an “I” designator will be added to the end of the Device number. 9 REV. 1.2 May 2001 V62C2802048L(L) MOSEL VITELIC U.S.A. 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 WORLDWIDE OFFICES TAIWAN 7F, NO. 102 MIN-CHUAN E. ROAD, SEC. 3 TAIPEI PHONE: 886-2-2545-1213 FAX: 886-2-2545-1209 NO 19 LI HSIN ROAD SCIENCE BASED IND. PARK HSIN CHU, TAIWAN, R.O.C. PHONE: 886-3-579-5888 FAX: 886-3-566-5888 V62C2802048L(L) UK & IRELAND SUITE 50, GROVEWOOD BUSINESS CENTRE STRATHCLYDE BUSINESS PARK BELLSHILL, LANARKSHIRE, SCOTLAND, ML4 3NQ PHONE: 44-1698-748515 FAX: 44-1698-748516 SINGAPORE 10 ANSON ROAD #23-13 INTERNATIONAL PLAZA SINGAPORE 079903 PHONE: 65-3231801 FAX: 65-3237013 JAPAN ONZE 1852 BUILDING 6F 2-14-6 SHINTOMI, CHUO-KU TOKYO 104-0041 PHONE: 03-3537-1400 FAX: 03-3537-1402 GERMANY (CONTINENTAL EUROPE & ISRAEL) BENZSTRASSE 32 71083 HERRENBERG GERMANY PHONE: +49 7032 2796-0 FAX: +49 7032 2796 22 U.S. SALES OFFICES NORTHWESTERN 3910 NORTH FIRST STREET SAN JOSE, CA 95134 PHONE: 408-433-6000 FAX: 408-433-0952 SOUTHWESTERN 302 N. EL CAMINO REAL #200 SAN CLEMENTE, CA 92672 PHONE: 949-361-7873 FAX: 949-361-7807 CENTRAL, NORTHEASTERN & SOUTHEASTERN 604 FIELDWOOD CIRCLE RICHARDSON, TX 75081 PHONE: 214-826-6176 FAX: 214-828-9754 © Copyright 2001, MOSEL VITELIC Inc. 5/01 Printed in U.S.A. The information in this document is subject to change without notice. MOSEL VITELIC makes no commitment to update or keep current the information contained in this document. No part of this document may be copied or reproduced in any form or by any means without the prior written consent of MOSEL-VITELIC. MOSEL VITELIC subjects its products to normal quality control sampling techniques which are intended to provide an assurance of high quality products suitable for usual commercial applications. MOSEL VITELIC does not do testing appropriate to provide 100% product quality assurance and does not assume any liability for consequential or incidental arising from any use of its products. If such products are to be used in applications in which personal injury might occur from failure, purchaser must do its own quality assurance testing appropriate to such applications. MOSEL VITELIC 3910 N. First Street, San Jose, CA 95134-1501 Ph: (408) 433-6000 Fax: (408) 433-0952 Tlx: 371-9461