2N3715

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î ÎÎÎÎÎÎÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Operating Junction and Storage Temperature Range Thermal Resistance Power Dissipation Base Current Collector Current Emitter–Base Voltage Collector–Base Voltage Collector–Emitter Voltage Rating 140 160 Symbol TJ, Tstg VCEO VCB VEB θJC PD IC IB 2N3715 1.17 150 4.0 7.0 10 80 60 – 65 to + 200 2N3716 1.17 150 100 4.0 7.0 10 80 CASE 1–07 TO–204AA (TO–3) Amps Amps Watts ©3–12 Motorola, Inc. 1995 • • • • • . . . designed for medium–speed switching and amplifier applications. These devices feature: Silicon NPN Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA REV 7 Safe Area Limits are indicated by Figures 12, 13. Both limits are applicable and must be observed. PD, POWER DISSIPATION (WATTS) Total Switching Time at 3 A typically 1.15 µs Gain Ranges Specified at 1 A and 3 A Low VCE(sat): typically 0.5 V at IC = 5 A and IB = 0.5 A Excellent Safe Operating Areas Complement to 2N3791–92 100 120 20 40 60 80 0 0 Figure 1. Power–Temperature Derating Curve 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Motorola Bipolar Power Transistor Device Data 175 200 10 AMPERE POWER TRANSISTORS SILICON NPN 60 – 80 VOLTS 150 WATTS 2N3715 2N3716 Order this document by 2N3715/D NPN _C/W Volts Volts Volts Unit _C ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ Î Î Î ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ Î Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Î Î Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (1) Pulse Test: Pulse Width ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Motorola Bipolar Power Transistor Device Data SWITCHING TIMES ( µ s) (IC = 5.0 A, IB1 = IB2 = 0.5 Adc) Rise Time Storage Time Fall Time Switching Times (Figure 2) Small Signal Current Gain (VCE = 10 Vdc, IC = 0.5 Adc, f = 1.0 MHz) Base–Emitter Voltage (1) (IC = 3.0 Adc, VCE = 2.0 Vdc) Base–Emitter Saturation Voltage (1) (IC = 5.0 Adc, IB = 0.5 Adc) Collector–Emitter Saturation Voltage (1) (IC = 5.0 Adc, IB = 0.5 Adc) DC Current Gain (1) (IC = 1.0 Adc, VCE = 2.0 Vdc) (IC = 3.0 Adc, VCE = 2.0 Vdc) Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0) Collector–Emitter Cutoff Current (VCE = 80 Vdc, VBE = – 1.5 Vdc) (VCE = 100 Vdc, VBE = – 1.5 Vdc) (VCE = 60 Vdc, VBE = – 1.5 Vdc, TC = 150_C) (VCE = 80 Vdc, VBE = – 1.5 Vdc, TC = 150_C) Emitter–Base Cutoff Current (VEB = 7.0 Vdc) 0.3 0.5 0.7 1.0 1.5 0.1 0.1 0.2 IB1 = IB2 0.2 tr tf 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (AMPS) ts v 300 µs, Duty Cycle v 2.0%. Characteristic Figure 2. Typical Switching Times 3.0 5.0 +11.5 V 2N3715, 2N3716 2N3715, 2N3716 2N3715, 2N3716 2N3715, 2N3716 –9 V Hg RELAYS 100 Ω 1W All Types All Types All Types 2N3715 2N3716 2N3715 2N3716 2N3715 2N3716 + 62 V toff ~ 1.7 ms ton ~ 30 µs VCEO(sus)* VCE(sat)* VBE(sat)* –9 V Symbol A TEST CIRCUIT ~ 4.8 ms VBE* IEBO ICEX hFE* hfe tr ts tf 100 Ω – 4 V 900 Ω 20 Ω 1W WAVE SHAPE AT POINT A Min 4.0 50 30 60 80 — — — — — — — — IC = 5 A, IB1 = IB2 = 0.5 A f ≈ 150 cps DUTY CYCLE ≈ 2% 6Ω 4W 2N3715 2N3716 0.45 0.3 0.4 Typ + 30 V 900 Ω 100 Ω Max 150 — 1.5 1.5 0.8 1.0 1.0 10 10 5.0 — — — 3–13 mAdc mAdc Unit Vdc Vdc Vdc Vdc µs — — 2N3715 2N3716 IC, COLLECTOR CURRENT (AMPS) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 2N3715, 2N3716 1000 700 500 300 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0 0.4 0.8 VCE = 2 V SEE NOTE 2 TJ = 175°C – 40°C 25°C 5.0 10 20 50 IB , BASE CURRENT (mA) VCE = 2 V SEE NOTES 1, 2 TJ = 175°C – 40°C 25°C 100 200 500 1000 1.2 1.6 2.0 IB, BASE CURRENT (mA) VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 3. Collector Current versus Base Current Figure 4. Base Current–Voltage Variations IC, COLLECTOR CURRENT (AMPS) 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.1 2N3715, 2N3716 TJ = 175°C 25°C – 40°C VCE = 2 V SEE NOTE 2 0.4 0.8 1.2 1.6 2.0 VBE, BASE–EMITTER VOLTAGE (VOLTS) Figure 5. Collector Current–Voltage Variations NOTE 1. Dotted line indicates metered base current plus the ICBO of the transistor at 175_C. NOTE 2. Pulse test: pulse width ≈ 200 µsec, duty cycle ≈ 1.5%. 3–14 Motorola Bipolar Power Transistor Device Data 2N3715 2N3716 VCE(sat) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.1 10 20 30 50 70 IC = 1 A 100 200 IB, BASE CURRENT (mA) 300 500 700 1000 2000 IC = 3 A IC = 5 A TJ = 25°C – 40°C 175°C SEE NOTE 2 Figure 6. Collector–Emitter Saturation Voltage Variations 1.4 VBE(sat) , BASE–EMITTER SATURATION VOLTAGE (VOLTS) 1.2 1.0 0.8 0.6 0.4 0.2 0.1 10 20 30 50 70 100 200 IB, BASE CURRENT (mA) 300 500 700 TJ = 25°C – 40°C 175°C SEE NOTE 2 1000 2000 IC = 1 A IC = 3 A IC = 5 A Figure 7. Base–Emitter Saturation Voltage Variations 10 7.0 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 – 0.6 VCE = VCEO – 20 V SEE NOTE 2 100 50 30 20 10 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 1 TJ = 175°C TJ = 100°C 10 100 1000 VCE = VCEO – 20 V SEE NOTE 2 10,000 100,000 TJ = 175°C TJ = 100°C REVERSE – 0.4 – 0.2 0 FORWARD 0.2 0.4 VBE, BASE–EMITTER VOLTAGE (VOLTS) RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS) Figure 8. Collector Current versus Base–Emitter Voltage Figure 9. Collector Current versus Base–Emitter Resistance Motorola Bipolar Power Transistor Device Data 3–15 2N3715 2N3716 200 hFE , CURRENT GAIN TJ = 175°C 150 25°C hFE I– + IBC ) ICBO ICBO 100 VCE = 2 V 50 – 40°C 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 IC, COLLECTOR CURRENT (AMPS) 1.0 2.0 3.0 5.0 7.0 10 Figure 10. Current Gain Variations fτ , CURRENT GAIN — BANDWIDTH PRODUCT (mc) 8 6 4 2 VCE = 6 V 0 0.1 0.2 0.3 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMPS) 2.0 3.0 5.0 Figure 11. Current Gain — Bandwidth Product versus Collector Current SAFE OPERATING AREAS 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 DC to 5 ms 500 µs 1 ms ≤ 50 µs 250 µs 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 DC to 5 ms 500 µs 1 ms ≤ 50 µs 250 µs IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) 0 10 20 30 40 50 60 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 70 0 10 80 20 30 40 50 60 70 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 90 Figure 12. 2N3715 The Safe Operating Area Curves indicate IC – VCE limits below which the device will not go into secondary breakdown. Collector load lines for specific circuits must fall within the applicable Safe Area to avoid causing a collector–emitter Figure 13. 2N3716 short. (Duty cycle of the excursions make no significant change in these safe areas.) To insure operation below the maximum TJ, the power–temperature derating curve must be observed for both steady state and pulse power conditions. 3–16 Motorola Bipolar Power Transistor Device Data 2N3715 2N3716 PACKAGE DIMENSIONS A N C –T– E D U V 2 2 PL SEATING PLANE K M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO–204AA OUTLINE SHALL APPLY. 0.13 (0.005) L G 1 TQ M Y M –Y– H B –Q– 0.13 (0.005) M TY M DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF ––– 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC ––– 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF ––– 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC ––– 21.08 3.84 4.19 30.15 BSC 3.33 4.77 STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR CASE 1–07 TO–204AA (TO–3) ISSUE Z Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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