2N5400

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5400/D Amplifier Transistors PNP Silicon 2N5400 2N5401* *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg 2N5400 2N5401 120 130 5.0 600 625 5.0 1.5 12 – 55 to +150 150 160 Unit Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C 3 CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 100 Vdc, IE = 0) (VCB = 120 Vdc, IE = 0) (VCB = 100 Vdc, IE = 0, TA = 100°C) (VCB = 120 Vdc, IE = 0, TA = 100°C) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. V(BR)CEO 2N5400 2N5401 V(BR)CBO 2N5400 2N5401 V(BR)EBO ICBO 2N5400 2N5401 2N5400 2N5401 IEBO — — — — — 100 50 100 50 50 130 160 5.0 — — — 120 150 — — Vdc Vdc Vdc nAdc µAdc nAdc Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N5400 2N5401 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 2N5400 2N5401 2N5400 2N5401 2N5400 2N5401 VCE(sat) — — VBE(sat) — — 1.0 1.0 0.2 0.5 Vdc 30 50 40 60 40 50 — — 180 240 — — Vdc — (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 50 mAdc, VCE = 5.0 Vdc) Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Small–Signal Current Gain (IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Noise Figure (IC = 250 µAdc, VCE = 5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2.0%. 2N5400 2N5401 NF fT 2N5400 2N5401 Cobo hfe 30 40 — 200 200 8.0 dB 100 100 — 400 300 6.0 pF — MHz 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N5400 2N5401 200 150 TJ = 125°C h FE, CURRENT GAIN 100 70 50 – 55°C 30 20 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 IC, COLLECTOR CURRENT (mA) 10 20 30 50 100 VCE = – 1.0 V VCE = – 5.0 V 25°C Figure 1. DC Current Gain VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 IB, BASE CURRENT (mA) 2.0 5.0 10 20 50 IC = 1.0 mA 10 mA 30 mA 100 mA Figure 2. Collector Saturation Region 103 IC, COLLECTOR CURRENT ( µA) 102 101 TJ = 125°C 100 10–1 10–2 10–3 0.3 75°C REVERSE 25°C FORWARD VCE = 30 V IC = ICES 0.2 0.1 0 0.1 0.2 0.3 0.4 0.5 VBE, BASE–EMITTER VOLTAGE (VOLTS) 0.6 0.7 Figure 3. Collector Cut–Off Region Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 2N5400 2N5401 θV, TEMPERATURE COEFFICIENT (mV/ °C) 1.0 0.9 0.8 V, VOLTAGE (VOLTS) 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 VCE(sat) @ IC/IB = 10 VBE(sat) @ IC/IB = 10 TJ = 25°C 2.5 2.0 1.5 1.0 0.5 0 –0.5 –1.0 –1.5 –2.0 –2.5 0.1 θVB for VBE(sat) 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 100 θVC for VCE(sat) TJ = – 55°C to 135°C Figure 4. “On” Voltages Figure 5. Temperature Coefficients 10.2 V Vin 10 µs INPUT PULSE tr, tf ≤ 10 ns DUTY CYCLE = 1.0% 0.25 µF 100 RB 5.1 k Vin 100 1N914 3.0 k RC Vout C, CAPACITANCE (pF) VBB + 8.8 V VCC –30 V 100 70 50 30 20 10 7.0 5.0 3.0 2.0 1.0 0.2 Cibo TJ = 25°C Cobo Values Shown are for IC @ 10 mA 0.3 2.0 3.0 5.0 7.0 0.5 0.7 1.0 VR, REVERSE VOLTAGE (VOLTS) 10 20 Figure 6. Switching Time Test Circuit Figure 7. Capacitances 1000 700 500 300 t, TIME (ns) 200 100 70 50 30 20 2000 IC/IB = 10 TJ = 25°C tr @ VCC = 120 V tr @ VCC = 30 V t, TIME (ns) 1000 700 500 300 200 100 70 50 30 100 200 20 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 IC/IB = 10 TJ = 25°C tf @ VCC = 30 V ts @ VCC = 120 V tf @ VCC = 120 V td @ VBE(off) = 1.0 V VCC = 120 V 1.0 2.0 3.0 5.0 10 20 30 50 10 0.2 0.3 0.5 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Turn–On Time Figure 9. Turn–Off Time 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data 2N5400 2N5401 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V CASE 029–04 (TO–226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 2N5400 2N5401 Motorola reserves the right to make changes without further notice to any products herein. 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