BC489

MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Current Transistors Order this document by BC489/D NPN Silicon COLLECTOR 1 2 BASE 3 EMITTER BC489,A,B MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 80 80 5.0 0.5 625 5.0 1.5 12 – 55 to +150 1 Unit Vdc Vdc Vdc Adc mW mW/°C Watt mW/°C °C 2 3 CASE 29–04, STYLE 17 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) V(BR)CEO V(BR)CBO V(BR)EBO ICBO 80 80 5.0 — — — — — — — — 100 Vdc Vdc Vdc nAdc ON CHARACTERISTICS* DC Current Gain (IC = 10 mAdc, VCE = 2.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE BC489 BC489A BC489B 40 60 100 160 15 — — 160 260 — — 400 250 400 — — (IC = 1.0 Adc, VCE = 5.0 Vdc)* 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2%. Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 BC489,A,B ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS* (Continued) Collector – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc) Base – Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) (IC = 1.0 Adc, IB = 100 mAdc)(1) VCE(sat) — — VBE(sat) — — 0.85 0.9 1.2 — 0.2 0.3 0.5 — Vdc Vdc DYNAMIC CHARACTERISTICS Current–Gain — Bandwidth Product (IC = 50 mAdc, VCE = 2.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. fT Cob Cib — — — 200 7.0 50 — — — MHz pF pF TURN–ON TIME 5.0 µs +10 V 0 tr = 3.0 ns Vin 5.0 µF –1.0 V 100 RB 100 VCC +40 V RL OUTPUT Vin TURN–OFF TIME +VBB 100 RB 5.0 µF 5.0 µs tr = 3.0 ns * Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities 100 VCC +40 V RL OUTPUT *CS < 6.0 pF *CS < 6.0 pF Figure 1. Switching Time Test Circuits 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC489,A,B f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) 300 200 VCE = 2.0 V TJ = 25°C C, CAPACITANCE (pF) 80 60 40 Cibo TJ = 25°C 100 70 50 20 10 8.0 6.0 Cobo 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 4.0 0.1 Figure 2. Current–Gain — Bandwidth Product Figure 3. Capacitance 1.0 k 700 500 300 200 t, TIME (ns) 100 70 50 30 20 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25°C 10 ts tf tr td @ VBE(off) = 0.5 V 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 10 5.0 7.0 Figure 4. Switching Time r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 1.0 D = 0.5 0.2 0.1 0.02 0.01 SINGLE PULSE SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN–469) TJ(pk) – TC = P(pk) ZθJC(t) TJ(pk) – TA = P(pk) ZθJA(t) 5.0 k 10 k 20 k 50 k 100 k ZθJC(t) = r(t) • RθJC ZθJA(t) = r(t) • RθJA 20 50 100 200 500 t, TIME (ms) 1.0 k 2.0 k 2.0 5.0 10 Figure 5. Thermal Response Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 BC489,A,B IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 100 70 50 30 20 10 1.0 TA = 25°C 1.0 s TC = 25°C 100 µs 1.0 ms CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT BC489 20 30 50 2.0 3.0 5.0 7.0 10 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 70 100 Figure 6. Active Region — Safe Operating Area 400 TJ =125°C hFE , DC CURRENT GAIN 200 25°C –55°C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 VCE = 1.0 V Figure 7. DC Current Gain 1.0 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 TJ = 25°C 0.8 50 IC = 10 mA mA 100 mA 250 mA 500 mA 0.6 0.4 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 0.2 0 0.05 0.1 0.2 0.5 2.0 5.0 1.0 10 IC, COLLECTOR CURRENT (mA) 20 50 Figure 8. “On” Voltages Figure 9. Collector Saturation Region 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data BC489,A,B RθVB, TEMPERATURE COEFFICIENT (mV/°C) –0.8 –1.2 V, VOLTAGE (VOLTS) –1.0 TJ = 25°C –0.8 VBE(sat) @ IC/IB = 10 –0.6 VBE(on) @ VCE = –1.0 V –0.4 –1.6 RθVB for VBE –2.0 –2.4 –0.2 VCE(sat) @ IC/IB = 10 –2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 500 0 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) –500 Figure 10. Base–Emitter Temperature Coefficient Figure 11. “On” Voltages VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) TJ = 25°C –0.8 RθVB, TEMPERATURE COEFFICIENT (mV/°C) –1.0 –0.8 –1.2 –0.6 –1.6 RθVB for VBE –0.4 IC = –10 mA –0.2 –50 mA –100 mA –250 mA –500 mA –2.0 –2.4 0 –0.05 –0.1 –0.2 –0.5 –1.0 –2.0 –5.0 IB, BASE CURRENT (mA) –10 –20 –50 –2.8 –0.5 –1.0 –2.0 –5.0 –10 –20 –50 –100 –200 IC, COLLECTOR CURRENT (mA) –500 Figure 12. Collector Saturation Region Figure 13. Base–Emitter Temperature Coefficient Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 BC489,A,B PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V CASE 029–04 (TO–226AA) ISSUE AD STYLE 17: PIN 1. COLLECTOR 2. BASE 3. 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