MCM69R738CZP4.4

MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MCM69R738C/D 4M Late Write 2.5 V I/O The MCM69R738C/820C is a 4M–bit synchronous late write fast static RAM designed to provide high performance in secondary cache and ATM switch, Telecom, and other high speed memory applications. The MCM69R820C (organized as 256K words by 18 bits) and the MCM69R738C (organized as 128K words by 36 bits) are fabricated in Motorola’s high performance silicon gate BiCMOS technology. The differential clock (CK) inputs control the timing of read/write operations of the RAM. At the rising edge of CK, all addresses, write enables, and synchronous selects are registered. An internal buffer and special logic enable the memory to accept write data on the rising edge of CK, a cycle after address and control signals. Read data is also driven on the rising edge of CK. The RAM uses 2.5 V inputs and outputs. The synchronous write and byte enables allow writing to individual bytes or the entire word. • • • • • • • • • Byte Write Control Single 3.3 V +10%, –5% Operation 2.5 V I/O (VDDQ) Register to Register Synchronous Operation Asynchronous Output Enable Boundary Scan (JTAG) IEEE 1149.1 Compatible Differential Clock Inputs Optional x18 or x36 Organization MCM69R738C/820C–4 = 4 ns MCM69R738C/820C–4.4 = 4.4 ns MCM69R738C/820C–5 = 5 ns MCM69R738C/820C–6 = 6 ns • Sleep Mode Operation (ZZ Pin) • 119–Bump, 50 mil (1.27 mm) Pitch, 14 mm x 22 mm Plastic Ball Grid Array (PBGA) Package MCM69R738C MCM69R820C ZP PACKAGE PBGA CASE 999–02 Freescale Semiconductor, Inc... REV 1 8/13/99 © Motorola, Inc. 1999 MOTOROLA FAST SRAM For More Information On This Product, Go to: www.freescale.com MCM69R738C•MCM69R820C 1 Freescale Semiconductor, Inc. FUNCTIONAL BLOCK DIAGRAM DATA IN REGISTER DQ DATA OUT REGISTER SA ADDRESS REGISTERS MEMORY ARRAY SW SBx SW REGISTERS CONTROL LOGIC CK G Freescale Semiconductor, Inc... SS SS REGISTERS PIN ASSIGNMENTS TOP VIEW MCM69R738C 1 A B C D E DQc F G DQc H J K L DQd M VDDQ DQd N P R T U DQd DQd NC NC DQd DQd SA NC VSS VSS VSS VSS SA TDI SW SA SA VDD SA TCK VSS VSS VSS VDD SA TDO DQa VDDQ DQa DQa SA NC DQa DQa NC ZZ N P R T NC U SA SA TDI NC TCK SA TDO SA ZZ VDDQ TMS NC VDDQ DQd SBd CK SBa DQa DQa M VDDQ DQb DQb NC NC NC DQb SA VSS VSS VSS VSS SW SA SA VDD VSS VSS VSS VDD NC VDDQ DQa NC SA NC DQa NC DQc DQc DQc SBc VSS NC VSS NC NC VDD CK SBb VSS NC VSS DQb DQb DQb DQb H J K L DQb NC DQc VSS VSS SS G VSS VSS DQb DQb F G NC DQb DQb NC SBb VSS NC VSS VSS NC NC VDD CK CK VSS VSS NC VSS SBa NC DQa DQa NC VDDQ DQc DQb VDDQ VDDQ NC NC DQc 2 SA NC SA DQc 3 SA SA SA VSS 4 NC NC VDD NC 5 SA SA SA VSS 6 SA NC SA DQb 7 VDDQ NC NC DQb A B C D E NC VDDQ DQb NC VSS VSS SS G VSS VSS NC DQa DQa VDDQ 1 VDDQ NC NC DQb 2 SA NC SA NC MCM69R820C 3 SA SA SA VSS 4 NC NC VDD NC 5 SA SA SA VSS 6 SA NC SA DQa 7 VDDQ NC NC NC VDDQ VDD DQd DQd VDD VDDQ DQa DQa VDDQ VDD NC DQb VDD VDDQ NC DQa DQa NC VDDQ TMS NC VDDQ MCM69R738C•MCM69R820C 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA FAST SRAM Freescale Semiconductor, Inc. MCM69R738C PIN DESCRIPTIONS PBGA Pin Locations 4K 4L (a) 6K, 7K, 6L, 7L, 6M, 6N, 7N, 6P, 7P (b) 6D, 7D, 6E, 7E, 6F, 6G, 7G, 6H, 7H (c) 1D, 2D, 1E, 2E, 2F, 1G, 2G, 1H, 2H (d) 1K, 2K, 1L, 2L, 2M, 1N, 2N, 1P, 2P 4F 2A, 3A, 5A, 6A, 3B, 5B, 2C, 3C, 5C, 6C, 4N, 4P, 2R, 6R, 3T, 4T, 5T 5L, 5G, 3G, 3L (a), (b), (c), (d) 4E Symbol CK CK DQx Type Input Input I/O Description Address, data in, and control input register clock. Active high. Address, data in, and control input register clock. Active low. Synchronous Data I/O. G SA SBx Input Input Input Output Enable: Asynchronous pin, active low. Synchronous Address Inputs: Registered on the rising clock edge. Synchronous Byte Write Enable: Enables writes to byte x in conjunction with the SW input. Has no effect on read cycles, active low. Synchronous Chip Enable: Registered on the rising clock edge, active low. Synchronous Write: Registered on the rising clock edge, active low. Writes all enabled bytes. Test Clock (JTAG). Test Data In (JTAG). Test Data Out (JTAG). Test Mode Select (JTAG). Enables sleep mode, active high. Core Power Supply. Output Power Supply: Provides operating power for output buffers. Ground. No Connection: There is no connection to the chip. Note: 3J and 5J are tied common. SS SW TCK TDI TDO TMS ZZ VDD VDDQ VSS NC Input Input Input Input Output Input Input Supply Supply Supply — Freescale Semiconductor, Inc... 4M 4U 3U 5U 2U 7T 4C, 2J, 4J, 6J, 4R, 5R 1A, 7A, 1F, 7F, 1J, 7J, 1M, 7M, 1U, 7U 3D, 5D, 3E, 5E, 3F, 5F, 3H, 5H, 3K, 5K, 3M, 5M, 3N, 5N, 3P, 5P, 3R 4A, 1B, 2B, 4B, 6B, 7B, 1C, 7C, 4D, 4G, 4H, 3J, 5J, 1R, 7R, 1T, 2T, 6T, 6U MOTOROLA FAST SRAM For More Information On This Product, Go to: www.freescale.com MCM69R738C•MCM69R820C 3 Freescale Semiconductor, Inc. MCM69R820C PIN DESCRIPTIONS PBGA Pin Locations 4K 4L (a) 6D, 7E, 6F, 7G, 6H, 7K, 6L, 6N, 7P (b) 1D, 2E, 2G, 1H, 2K, 1L, 2M, 1N, 2P 4F 2A, 3A, 5A, 6A, 3B, 5B, 2C, 3C, 5C, 6C, 4N, 4P, 2R, 6R, 2T, 3T, 5T, 6T 5L, 3G (a), (b) 4E 4M Symbol CK CK DQx G SA SBx Type Input Input I/O Input Input Input Description Address, data in, and control input register clock. Active high. Address, data in, and control input register clock. Active low. Synchronous Data I/O. Output Enable: Asynchronous pin, active low. Synchronous Address Inputs: Registered on the rising clock edge. Synchronous Byte Write Enable: Enables writes to byte x in conjunction with the SW input. Has no effect on read cycles, active low. Synchronous Chip Enable: Registered on the rising clock edge, active low. Synchronous Write: Registered on the rising clock edge, active low. Writes all enabled bytes. Test Clock (JTAG). Test Data In (JTAG). Test Data Out (JTAG). Test Mode Select (JTAG). Enables sleep mode, active high. Core Power Supply. Output Power Supply: Provides operating power for output buffers. Ground. No Connection: There is no connection to the chip. Note: 3J and 5J are tied common. SS SW TCK TDI TDO TMS ZZ VDD VDDQ VSS NC Input Input Input Input Output Input Input Supply Supply Supply — Freescale Semiconductor, Inc... 4U 3U 5U 2U 7T 4C, 2J, 4J, 6J, 4R, 5R 1A, 7A, 1F, 7F, 1J, 7J, 1M, 7M, 1U, 7U 3D, 5D, 3E, 5E, 3F, 5F, 5G, 3H, 5H, 3K, 5K, 3L, 3M, 5M, 3N, 5N, 3P, 5P, 3R 4A, 1B, 2B, 4B, 6B, 7B, 1C, 7C, 2D, 4D, 7D, 1E, 6E, 2F, 1G, 4G, 6G, 2H, 4H, 7H, 3J, 5J, 1K, 6K, 2L, 7L, 6M, 2N, 7N, 1P, 6P, 1R, 7R, 1T, 4T, 6U MCM69R738C•MCM69R820C 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA FAST SRAM Freescale Semiconductor, Inc. ABSOLUTE MAXIMUM RATINGS (Voltages Referenced to VSS, See Note) Rating Core Supply Voltage Output Supply Voltage Voltage On Any Pin Input Current (per I/O) Output Current (per I/O) Operating Temperature Temperature Under Bias Storage Temperature Symbol VDD VDDQ Vin Iin Iout TA Tbias Tstg Value –0.5 to 4.6 –0.5 to VDD + 0.5 –0.5 to VDD + 0.5 ±50 ±70 0 to 70 –10 to 85 –55 to 125 Unit V V V mA mA °C °C °C This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high–impedance circuit. This BiCMOS memory circuit has been designed to meet the dc and ac specifications shown in the tables, after thermal equilibrium has been established. This device contains circuitry that will ensure the output devices are in High–Z at power up. NOTE: Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to RECOMMENDED OPERATING CONDITIONS. Exposure to higher than recommended voltages for extended periods of time could affect device reliability. Freescale Semiconductor, Inc... PBGA PACKAGE THERMAL CHARACTERISTICS Rating Junction to Ambient (Still Air) Junction to Ambient (@200 ft/min) Junction to Ambient (@200 ft/min) Junction to Board (Bottom) Junction to Case (Top) Single–Layer Board Four–Layer Board Symbol RθJA RθJA RθJA RθJB RθJC Max 53 38 22 14 5 Unit °C/W °C/W °C/W °C/W °C/W 3 4 Notes 1, 2 1, 2 NOTES: 1. Junction temperature is a function of on–chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. 2. Per SEMI G38–87. 3. Indicates the average thermal resistance between the die and the printed circuit board. 4. Indicates the average thermal resistance between the die and the case top surface as measured by the cold plate method (MIL SPEC–883 Method 1012.1). CLOCK TRUTH TABLE K L–H L–H L–H L–H L–H L–H L–H L–H L–H X ZZ L L L L L L L L L H SS L L L L L L L H H X SW H L L L L L L H L X SBa X L H H H L H X X X SBb X H L H H L H X X X SBc X H H L H L H X X X SBd X H H H L L H X X X DQ (n) X High–Z High–Z High–Z High–Z High–Z High–Z X High–Z High–Z DQ (n + 1) Dout 0 – 35 Din 0 – 8 Din 9 – 17 Din 18 – 26 Din 27 – 35 Din 0 – 35 High–Z High–Z High–Z High–Z Mode Read Cycle All Bytes Write Cycle 1st Byte Write Cycle 2nd Byte Write Cycle 3rd Byte Write Cycle 4th Byte Write Cycle All Bytes Abort Write Cycle Deselect Cycle Deselect Cycle Sleep Mode MOTOROLA FAST SRAM For More Information On This Product, Go to: www.freescale.com MCM69R738C•MCM69R820C 5 Freescale Semiconductor, Inc. DC OPERATING CONDITIONS AND CHARACTERISTICS (VDD = 3.3 V ± 5%, 0°C ≤ TA ≤ 70°C, Unless Otherwise Noted) RECOMMENDED OPERATING CONDITIONS (See Notes 1 through 4) Parameter Core Power Supply Voltage Output Driver Supply Voltage AC Supply Current (Device Selected, All Outputs Open, Freq = Max, VDD = Max, VDDQ = Max). Includes Supply Currents for VDD. Quiescent Active Power Supply Current (Device Selected, All Outputs Open, Freq = 0, VDD = Max, VDDQ = Max). Includes Supply Currents for VDD. Symbol VDD VDDQ IDD1 Min 3.15 2.3 — Max –4 — — 795 Max –4.4 — — 775 Max –5 — — 750 Max –6 — — 750 Max 3.6 2.8 — Unit V V mA 5 Notes IDD2 — 540 540 540 540 — mA 6 Freescale Semiconductor, Inc... Active Standby Power Supply Current (Device Deselected, Freq = Max, VDD = Max, VDDQ = Max) CMOS Standby Supply Current (Device Deselected, Freq = 0, VDD = Max, VDDQ = Max, All Inputs Static at CMOS Levels) Sleep Mode Current (ZZ = VIH, Freq = Max, VDD = Max, VDDQ = Max) ISB1 — 400 400 400 400 — mA 7 ISB2 — 390 390 390 390 — mA 6, 7 IZZ — 100 100 100 100 — mA NOTES: 1. All data sheet parameters specified to full range of VDD unless otherwise noted. All voltages are referenced to voltage applied to VSS bumps. 2. Supply voltage applied to VDD connections. 3. Supply voltage applied to VDDQ connections. 4. All power supply currents measured with outputs open or deselected. 5. 50% read and 50% write; all addresses switching. 6. CMOS levels for I/Os are VIC ≤ VSS + 0.2 V or ≥ VDDQ – 0.2 V. CMOS levels for other inputs are Vin ≤ VSS + 0.2 V or ≥ VDD – 0.2 V. 7. Device deselected as defined by the Clock Truth Table. MCM69R738C•MCM69R820C 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA FAST SRAM Freescale Semiconductor, Inc. DC INPUT CHARACTERISTICS Parameter DC Input Logic High DC Input Logic Low Input Leakage Current Clock Input Leakage Current Clock Input Signal Voltage Clock Input Differential Voltage Clock Input Common Mode Voltage Range (See Figure 3) Symbol VIH (dc) VIL (dc) Ilkg(1) Iclkg(1) Vin VDIF (dc) VCM (dc) Min 1.7 –0.3 — — –0.3 0.2 1.1 Max VDD + 0.3 0.7 ±5 ±8 VDD + 0.3 VDD + 0.6 2.1 Unit V V µA µA V V V 3 4 1 2 2 Notes NOTES: 1. Inputs may undershoot to –0.5 V (peak) for up to 20% tKHKH (e.g., 2 ns at a clock cycle time of 10 ns). 2. 0 V ≤ Vin ≤ VDD. 3. Minimum instantaneous differential input voltage required for differential input clock operation. 4. Maximum rejectable common mode input voltage variation. Freescale Semiconductor, Inc... DC OUTPUT CHARACTERISTICS Parameter Output Leakage Current Output Low Voltage Output High Voltage NOTES: 1. IOL ≥ – 8 mA. 2. IOH ≥ 8 mA. Symbol Ilkg(0) VOL VOH Min –1 — 1.7 Max 1 0.7 — Unit µA V V 1 2 Notes CAPACITANCE (f = 1.0 MHz, dV = 3.0 V, VDD = 3.3 V ± 5%, 0°C ≤ TA ≤ 70°C, Periodically Sampled Rather Than 100% Tested) Characteristic Input Capacitance Input/Output Capacitance CK, CK Capacitance Symbol Cin CI/O CCK Typ 4 7 4 Max 5 8 5 Unit pF pF pF MOTOROLA FAST SRAM For More Information On This Product, Go to: www.freescale.com MCM69R738C•MCM69R820C 7 Freescale Semiconductor, Inc. AC OPERATING CONDITIONS AND CHARACTERISTICS (VDD = 3.3 V ± 5%, 0°C ≤ TA ≤ 70°C, Unless Otherwise Noted) Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 2.5 V Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . 1 V/ns (20% to 80%) Input Timing Measurement Reference Level . . . . . . . . . . . . . . 1.25 V Output Timing Reference Level . . . . . . . . . . . . . . . . . . . . . . . . . 1.25 V Clock Input Timing Reference Level . . . . . . Differential Cross–Point Clock Input Pulse Level . . . . . . . . . . . . . . . . . . . . . . . . . 1.8 V to 2.1 V RθJA Device . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22°C/W READ/WRITE CYCLE TIMING 69R738C–4 69R820C–4 Parameter Cycle Time Clock High Pulse Width Clock Low Pulse Width Clock High to Output Low–Z Symbol tKHKH tKHKL tKLKH tKHQX1 tKHQV tKHQX tKHQZ tGLQX tGLQV tGHQX tGHQZ tZZE tZZR Address Data In Chip Select Write Enable Address Data In Chip Select Write Enable tAVKH tDVKH tSVKH tWVKH tKHAX tKHDX tKHSX tKHWX Min 4 1.5 1.5 0.5 — 0.7 — 0.5 — 0.5 — — 200 0.5 Max — — — — 2 — 2 — 2 — 2 50 — — 69R738C–4.4 69R820C–4.4 Min 4.4 1.5 1.5 1 — 0.7 — 0.5 — 0.5 — — 200 0.5 Max — — — — 2.2 — 2.2 — 2.2 — 2 50 — — 69R738C–5 69R820C–5 Min 5 2 2 1 — 1 — 0.5 — 0.5 — — 200 0.5 Max — — — — 2.5 — 2.5 — 2.5 — 2.5 50 — — 69R738C–6 69R820C–6 Min 6 2.4 2.4 1 — 1 — 0.5 — 0.5 — — 200 0.5 Max — — — — 3 — 3 — 3 — 3 50 — — Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns 1, 2 1 1, 2 1, 2 Notes Freescale Semiconductor, Inc... Clock High to Output Valid Clock High to Output Hold Clock High to Output High–Z Output Enable Low to Output Low–Z Output Enable Low to Output Valid Output Enable to Output Hold Output Enable High to Output High–Z ZZ High to Sleep Mode ZZ Low to Recovery Setup Times: Hold Times: 0.75 — 0.75 — 1 — 1 — ns NOTES: 1. This parameter is sampled and not 100% tested. 2. Measured at ±200 mV from steady state. TIMING LIMITS The table of timing values shows either a minimum or a maximum limit for each parameter. Input requirements are specified from the external system point of view. Thus, address setup time is shown as a minimum since the system must supply at least that much time. On the other hand, responses from the memory are specified from the device point of view. Thus, the access time is shown as a maximum since the device never provides data later than that time. VDDQ/2 50 Ω DEVICE UNDER TEST 50 Ω Figure 1. AC Test Load MCM69R738C•MCM69R820C 8 For More Information On This Product, Go to: www.freescale.com MOTOROLA FAST SRAM Freescale Semiconductor, Inc. VOH VSS 50% 100% 20% tKHKH Figure 2. Undershoot Voltage Freescale Semiconductor, Inc... VDDQ VTR CROSSING POINT VDIF VCP VSS * VCM, the Common Mode Input Voltage, equals VTR – [(VTR – VCP)/2]. VCM* Figure 3. Differential Inputs/Common Mode Input Voltage MOTOROLA FAST SRAM For More Information On This Product, Go to: www.freescale.com MCM69R738C•MCM69R820C 9 Freescale Semiconductor, Inc. REGISTER/REGISTER READ–WRITE–READ CYCLES t KHKH CK t AVKH t KHAX SA A0 t SVKH SS t WVKH SW t KHWX A1 t KHSX A2 t KLKH A3 A4 t KHKL Freescale Semiconductor, Inc... SBx G VIL t KHQV t KHQZ t KHQX t KHQX t KHQX1 t KHDX t DVKH D2 Q3 DQx Q–1 Q0 Q1 MCM69R738C•MCM69R820C 10 For More Information On This Product, Go to: www.freescale.com MOTOROLA FAST SRAM Freescale Semiconductor, Inc. REGISTER/REGISTER READ–WRITE–READ (G Controlled) t KHKH CK t AVKH t KHAX SA A0 A1 A2 t KLKH A3 A4 t KHKL SS VIL SW Freescale Semiconductor, Inc... SBx G t GHQZ DQx Q–1 Q0 Q1 D2 t GLQV t GLQX Q3 t GHQX MOTOROLA FAST SRAM For More Information On This Product, Go to: www.freescale.com MCM69R738C•MCM69R820C 11 ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ tZZE Freescale Semiconductor, Inc... ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉÉ I ZZ tZZR MCM69R738C•MCM69R820C 12 CK NORMAL OPERATION NO NEW READS OR WRITES ALLOWED Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com SW DQ ZZ G ADDR IDD MOTOROLA FAST SRAM SLEEP MODE TIMING IN SLEEP MODE NO READS OR WRITES ALLOWED NORMAL OPERATION Freescale Semiconductor, Inc. FUNCTIONAL OPERATION READ AND WRITE OPERATIONS All control signals except G are registered on the rising edge of the CK clock. These signals must meet the setup and hold times shown in the AC Characteristics table. On the rising edge of the following clock, read data is clocked into the output register and available at the outputs at tKHQV. During this same cycle a new read address can be applied to the address pins. A deselect cycle (dead cycle) must occur prior to a write cycle. Read cycles may follow write cycles immediately. G, SS, and SW control output drive. Chip deselect via a high on SS at the rising edge of CK clock has its effect on the output drivers after the next rising edge of CK. SW low deselects the output drivers immediately (on the same cycle). Output selecting via a low on SS and high on SW at a rising CK clock has its effect on the output drivers after the next rising edge of CK. Output drive is also controlled directly by output enable G. G is an asynchronous input. No clock edges are required to enable/disable the output using G. Output data will be valid the latter of tGLQV and tKHQV. Outputs will begin driving at tKHQX1. Outputs will hold previous data until tKHQX or tGHQX. WRITE AND BYTE WRITE FUNCTIONS Note that in the following discussion the term “byte” refers to nine bits of the RAM I/O bus. In all cases, the timing parameters described for synchronous write input (SW), apply to each of the byte write enable inputs (SBa, SBb, etc.). Byte write enable inputs have no effect on read cycles. This allows the system designer not interested in performing byte writes to connect the byte enable inputs to active low (VSS). Reads of all bytes proceed normally and write cycles activated via a low on SW and the rising edge of CK, write the entire RAM I/O width. This way the designer is spared having to drive multiple write input buffer loads. Byte writes are performed using the byte write enable inputs in conjunction with the synchronous write input (SW). It is important to note that writing any one byte will inhibit a read of all bytes at the current address. The RAM can not simultaneously read one byte and write another at the same address. A write cycle initiated with none of the byte write enable inputs active, is neither a read or a write. No write will occur, but the outputs will be deselected as in a normal write cycle. LATE WRITE The write address is sampled on the first rising edge of clock, and write data is sampled on the following rising edge. The late write feature is implemented with single stage write buffering. Write buffering is transparent to the user. A comparator monitors the address bus and, when necessary, routes buffer contents to the outputs to ensure coherent operation. This occurs in all cases, whether there is a byte write or a full word is written. POWER UP AND INITIALIZATION The following supply voltage application sequence is recommended: VSS, VDD, then VDDQ. Please note, per the Absolute Maximum Ratings table, VDDQ is not to exceed VDD + 0.5 V, whatever the instantaneous value of VDD. Once supplies have reached specification levels, a minimum dwell of 1.0 ms with CK clock inputs cycling is required before beginning normal operations. SLEEP MODE This device is equipped with an optional sleep or low power mode. The sleep mode pin is asynchronous and active high. During normal operation, the ZZ pin is pulled low. When ZZ is pulled high, the chip will enter sleep mode where the device will meet the lowest possible power conditions. The Sleep Mode Timing diagram shows the following modes of operation: Normal Operation, No Read/Write Allowed, and Sleep Mode. Normal Operation All inputs must meet setup and hold times prior to sleep and tZZR nanoseconds after recovering from sleep. Clock (CK) must also meet cycle high and low times during these periods. Two cycles prior to sleep, initiation of either a read or write operation is not allowed. No Read/Write Allowed During the period of time just prior to sleep and during recovery from sleep, the assertion of any write or read signal is not allowed. If a write or read operation occurs during these periods, the memory array may be corrupted. Validity of data out from the RAM can not be guaranteed immediately after ZZ is asserted (prior to being in sleep). During sleep mode recovery, the output impedance must be given additional time above and beyond tZZR in order to match desired impedance (see explanation in Output Impedance Circuitry paragraph). Sleep Mode The RAM automatically deselects itself. The RAM disconnects its internal clock buffer. The external clock may continue to run without impacting the RAMs sleep current (IZZ). All outputs will remain in a High–Z state while in sleep mode. All inputs are allowed to toggle. The RAM will not be selected, and perform any reads or writes. Freescale Semiconductor, Inc... MOTOROLA FAST SRAM For More Information On This Product, Go to: www.freescale.com MCM69R738C•MCM69R820C 13 Freescale Semiconductor, Inc. SERIAL BOUNDARY SCAN TEST ACCESS PORT OPERATION OVERVIEW The serial boundary scan test access port (TAP) on this RAM is designed to operate in a manner consistent with IEEE Standard 1149.1–1990 (commonly referred to as JTAG), but does not implement all of the functions required for IEEE 1149.1 compliance. Certain functions have been modified or eliminated because their implementation places extra delays in the RAMs critical speed path. Nevertheless, the RAM supports the standard TAP controller architecture. The TAP controller is the state machine that controls the TAP operation and can be expected to function in a manner that does not conflict with the operation of devices with IEEE 1149.1 compliant TAPs. The TAP operates using conventional JEDEC Standard 8–1B low voltage (3.3 V) TTL/CMOS logic level signaling. DISABLING THE TEST ACCESS PORT It is possible to use this device without utilizing the TAP. To disable the TAP Controller without interfering with normal operation of the device, TCK must be tied to VSS to preclude mid–level inputs. TDI and TMS are designed so an undriven input will produce a response identical to the application of a logic 1, and may be left unconnected. But they may also be tied to VDD through a 1 k resistor. TDO should be left unconnected. TAP DC OPERATING CHARACTERISTICS Freescale Semiconductor, Inc... (VDD = 3.3 V ± 5%, 0°C ≤ TA ≤ 70°C, Unless Otherwise Noted) Parameter Logic Input Logic High Logic Input Logic Low Logic Input Leakage Current CMOS Output Logic Low CMOS Output Logic High TTL Output Logic Low TTL Output Logic High NOTES: 1. 0 V≤ Vin ≤ VDDQ for all logic input pins. 2. IOL1 ≤ 100 µA @ VOL = 0.2 V. Sampled, not 100% tested. 3. |IOH1| ≤ 100 µA @ VDDQ – 0.2 V. Sampled, not 100% tested. 4. IOL2 ≤ 8 mA @ VOL = 0.4 V. 5. |IOH2| ≤ 8 mA @ VOH = 2.4 V. Symbol VIH1 VIL1 Ilkg VOL1 VOH1 VOL2 VOH2 Min 2.0 –0.3 — — VDD – 0.2 — 2.4 Max VDD + 0.3 0.8 ±5 0.2 — 0.4 — Unit V V µA V V V V 1 2 3 4 5 Notes MCM69R738C•MCM69R820C 14 For More Information On This Product, Go to: www.freescale.com MOTOROLA FAST SRAM Freescale Semiconductor, Inc. TAP AC OPERATING CONDITIONS AND CHARACTERISTICS (VDD = 3.3 V ± 5%, 0°C ≤ TA ≤ 70°C, Unless Otherwise Noted) Input Pulse Levels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 to 3.0 V Input Rise/Fall Time . . . . . . . . . . . . . . . . . . . . . . 1 V/ns (20% to 80%) Input Timing Measurement Reference Level . . . . . . . . . . . . . . . 1.5 V Output Timing Reference Level . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 V Output Test Load . . . . . 50 Ω Parallel Terminated T–Line with 20 pF Receiver Input Capacitance Test Load Termination Supply Voltage (VT) . . . . . . . . . . . . . . . 1.5 V TAP CONTROLLER TIMING Parameter Cycle Time Clock High Time Clock Low Time TMS Setup TMS Hold TDI Valid to TCK High Symbol tTHTH tTHTL tTLTH tMVTH tTHMX tDVTH tTHDX tCS tCH tTLQX Min 100 40 40 10 10 10 10 10 10 0 Max — — — — — — — — — — 20 Unit ns ns ns ns ns ns ns ns ns ns ns 1 1 Notes Freescale Semiconductor, Inc... TCK High to TDI Don’t Care Capture Setup Capture Hold TCK Low to TDO Unknown TCK Low to TDO Valid tTLOV — NOTE: 1. tCS + tCH defines the minimum pause in RAM I/O pad transitions to assure accurate pad data capture. AC TEST LOAD 1.5 V 50 Ω DEVICE UNDER TEST 50 Ω 20 pF TAP CONTROLLER TIMING DIAGRAM tTHTH tTLTH TEST CLOCK (TCK) tTHTL tMVTH TEST MODE SELECT (TMS) tTHDX tDVTH TEST DATA IN (TDI) tTLQV tTLQX TEST DATA OUT (TDO) tTHMX MOTOROLA FAST SRAM For More Information On This Product, Go to: www.freescale.com MCM69R738C•MCM69R820C 15 Freescale Semiconductor, Inc. TEST ACCESS PORT PINS TCK — TEST CLOCK (INPUT) Clocks all TAP events. All inputs are captured on the rising edge of TCK and all outputs propagate from the falling edge of TCK. TMS — TEST MODE SELECT (INPUT) The TMS input is sampled on the rising edge of TCK. This is the command input for the TAP controller state machine. An undriven TMS input will produce the same result as a logic 1 input level. TDI — TEST DATA IN (INPUT) The TDI input is sampled on the rising edge of TCK. This is the input side of the serial registers placed between TDI and TDO. The register placed between TDI and TDO is determined by the state of the TAP controller state machine and the instruction that is currently loaded in the TAP instruction register (see Figure 5). An undriven TDI pin will produce the same result as a logic 1 input level. TDO — TEST DATA OUT (OUTPUT) Output that is active depending on the state of the TAP state machine (see Figure 5). Output changes in response to the falling edge of TCK. This is the output side of the serial registers placed between TDI and TDO. TRST — TAP RESET This device does not have a TRST pin. TRST is optional in IEEE 1149.1. The test–logic–reset state is entered while TMS is held high for five rising edges of TCK. Power–on reset circuitry is included internally. This type of reset does not affect the operation of the system logic. The reset affects test logic only. BOUNDARY SCAN REGISTER The boundary scan register is identical in length to the number of active input and I/O connections on the RAM (not counting the TAP pins). This also includes a number of place holder locations (always set to a logic 1) reserved for density upgrade address pins. There are a total of 70 bits in the case of the x36 device and 51 bits in the case of the x18 device. The boundary scan register, under the control of the TAP controller, is loaded with the contents of the RAMs I/O ring when the controller is in capture–DR state and then is placed between the TDI and TDO pins when the controller is moved to shift–DR state. Several TAP instructions can be used to activate the boundary scan register. The Bump/Bit Scan Order tables describe which device bump connects to each boundary scan register location. The first column defines the bit’s position in the boundary scan register. The shift register bit nearest TDO (i.e., first to be shifted out) is defined as bit 1. The second column is the name of the input or I/O at the bump and the third column is the bump number. IDENTIFICATION (ID) REGISTER The ID register is a 32–bit register that is loaded with a device and vendor specific 32–bit code when the controller is put in capture–DR state with the IDCODE command loaded in the instruction register. The code is loaded from a 32–bit on–chip ROM. It describes various attributes of the RAM as indicated below. The register is then placed between the TDI and TDO pins when the controller is moved into shift–DR state. Bit 0 in the register is the LSB and the first to reach TDO when shifting begins. ID Register Presence Indicator Bit No. Value 0 1 Freescale Semiconductor, Inc... TEST ACCESS PORT REGISTERS OVERVIEW The various TAP registers are selected (one at a time) via the sequences of 1s and 0s input to the TMS pin as the TCK is strobed. Each of the TAPs registers are serial shift registers that capture serial input data on the rising edge of TCK and push serial data out on subsequent falling edge of TCK. When a register is selected, it is “placed” between the TDI and TDO pins. INSTRUCTION REGISTER The instruction register holds the instructions that are executed by the TAP controller when it is moved into the run test/idle or the various data register states. The instructions are 3 bits long. The register can be loaded when it is placed between the TDI and TDO pins. The instruction register is automatically preloaded with the IDCODE instruction at power up or whenever the controller is placed in test–logic– reset state. BYPASS REGISTER The bypass register is a single bit register that can be placed between TDI and TDO. It allows serial test data to be passed through the RAMs TAP to another device in the scan chain with as little delay as possible. Motorola JEDEC ID Code (Compressed Format, per IEEE Standard 1149.1–1990 Bit No. Value 11 0 10 0 9 0 8 0 7 0 6 0 5 0 4 1 3 1 2 1 1 0 Reserved For Future Use Bit No. Value 17 x 16 x 15 x 14 x 13 x 12 x Device Width Configuration 128K x 36 256K x 18 Bit No. Value Value 22 0 0 21 0 0 20 1 0 19 0 1 18 0 1 Device Depth Configuration 128K x 36 256K x 18 Bit No. Value Value 27 0 0 26 0 0 25 1 1 24 0 1 23 1 0 Revision Number Bit No. Value 31 x 30 x 29 x 28 x Figure 4. ID Register Bit Meanings MCM69R738C•MCM69R820C 16 For More Information On This Product, Go to: www.freescale.com MOTOROLA FAST SRAM Freescale Semiconductor, Inc. MCM69R738C Bump/Bit Scan Order Bit No. 1 2 3 4 5 6 7 8 9 10 11 Signal Name M2 SA SA SA SA ZZ DQa DQa DQa DQa DQa DQa DQa DQa DQa SBa CK CK G SBb DQb DQb DQb DQb DQb DQb DQb DQb DQb SA SA SA SA NC Bump p ID 5R 4P 4T 6R 5T 7T 6P 7P 6N 7N 6M 6L 7L 6K 7K 5L 4L 4K 4F 5G 7H 6H 7G 6G 6F 7E 6E 7D 6D 6A 6C 5C 5A 6B Bit No. 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 Signal Name SA NC SA SA SA SA DQc DQc DQc DQc DQc DQc DQc DQc DQc SBc NC SS NC NC SW SBd DQd DQd DQd DQd DQd DQd DQd DQd DQd SA SA SA Bump p ID 3B 2B 3A 3C 2C 2A 2D 1D 2E 1E 2F 2G 1G 2H 1H 3G 4D 4E 4G 4H 4M 3L 1K 2K 1L 2L 2M 1N 2N 1P 2P 3T 2R 4N MCM69R820C Bump/Bit Scan Order Bit No. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 Signal Name M2 SA SA SA SA ZZ DQa DQa DQa DQa SBa CK CK G DQa DQa DQa DQa DQa SA SA SA SA NC SA SA NC SA SA SA SA DQb DQb DQb Bump p ID 5R 6T 4P 6R 5T 7T 7P 6N 6L 7K 5L 4L 4K 4F 6H 7G 6F 7E 6D 6A 6C 5C 5A 6B 5B 3B 2B 3A 3C 2C 2A 1D 2E 2G Bit No. 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 Signal Name SBb NC SS NC NC SW DQb DQb DQb DQb DQb SA SA SA SA M1 Bump p ID 3G 4D 4E 4G 4H 4M 2K 1L 2M 1N 2P 3T 2R 4N 2T 3R Freescale Semiconductor, Inc... 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 SA 5B 70 M1 3R 35 DQb 1H NOTES: 1. The NC pads listed in this table are indeed no connects, but are represented in the boundary scan register by a “place holder” bit that is forced to logic 1. These pads are reserved for use as address inputs on higher density RAMs that follow this pad out and scan order standard. 2. In scan mode, differential inputs CK and CK are referenced to each other and must be at opposite logic levels for reliable operation. 3. M1 and M2 are not ordinary inputs and may not respond to standard I/O logic levels. M1 and M2 must be driven to within 100 mV of a VDD or VSS supply rail to ensure consistent results. 4. ZZ must remain at VIL during boundary scan to ensure consistent results. MOTOROLA FAST SRAM For More Information On This Product, Go to: www.freescale.com MCM69R738C•MCM69R820C 17 Freescale Semiconductor, Inc. TAP CONTROLLER INSTRUCTION SET OVERVIEW There are two classes of instructions defined in IEEE Standard 1149.1–1990, the standard (public) instructions and device specific (private) instructions. Some public instructions are mandatory for IEEE 1149.1 compliance. Optional public instructions must be implemented in prescribed ways. Although the TAP controller in this device follows the IEEE 1149.1 conventions, it is not IEEE 1149.1 compliant because some of the mandatory instructions are not fully implemented. The TAP on this device may be used to monitor all input and I/O pads, but can not be used to load address, data, or control signals into the RAM or to preload the I/O buffers. In other words, the device will not perform IEEE 1149.1 EXTEST, INTEST, or the preload portion of the SAMPLE/PRELOAD command. When the TAP controller is placed in capture–IR state, the two least significant bits of the instruction register are loaded with 01. When the controller is moved to the shift–IR state, the instruction register is placed between TDI and TDO. In this state, the desired instruction is serially loaded through the TDI input (while the previous contents are shifted out at TDO). For all instructions, the TAP executes newly loaded instructions only when the controller is moved to update–IR state. The TAP instruction sets for this device are listed in the following tables. expected. RAM input signals must be stabilized for long enough to meet the TAPs input data capture setup plus hold time (tCS plus tCH). The RAMs clock inputs need not be paused for any other TAP operation except capturing the I/O ring contents into the boundary scan register. Moving the controller to shift–DR state then places the boundary scan register between the TDI and TDO pins. Because the PRELOAD portion of the command is not implemented in this device, moving the controller to the update–DR state with the SAMPLE/PRELOAD instruction loaded in the instruction register has the same effect as the pause–DR command. This functionality is not IEEE 1149.1 compliant. EXTEST EXTEST is an IEEE 1149.1 mandatory public instruction. It is to be executed whenever the instruction register, whatever length it may be in the device, is loaded with all logic 0s. EXTEST is not implemented in this device. Therefore, this device is not IEEE 1149.1 compliant. Nevertheless, this RAM TAP does respond to an all 0s instruction, as follows. With the EXTEST (000) instruction loaded in the instruction register, the RAM responds just as it does in response to the SAMPLE/PRELOAD instruction described above, except the DQ pins are forced to High–Z any time the instruction is loaded. IDCODE Freescale Semiconductor, Inc... STANDARD (PUBLIC) INSTRUCTIONS BYPASS The BYPASS instruction is loaded in the instruction register when the bypass register is placed between TDI and TDO. This occurs when the TAP controller is moved to the shift–DR state. This allows the board level scan path to be shortened to facilitate testing of other devices in the scan path. SAMPLE/PRELOAD SAMPLE/PRELOAD is an IEEE 1149.1 mandatory public instruction. When the SAMPLE/PRELOAD instruction is loaded in the instruction register, moving the TAP controller into the capture–DR state loads the data in the RAMs input and I/O buffers into the boundary scan register. Because the RAM clock(s) are independent from the TAP clock (TCK), it is possible for the TAP to attempt to capture the I/O ring contents while the input buffers are in transition (i.e., in a metastable state). Although allowing the TAP to sample metastable inputs will not harm the device, repeatable results can not be The IDCODE instruction causes the ID ROM to be loaded into the ID register when the controller is in capture–DR mode and places the ID register between the TDI and TDO pins in shift–DR mode. The IDCODE instruction is the default instruction loaded in at power up and any time the controller is placed in the test–logic–reset state. DEVICE SPECIFIC (PUBLIC) INSTRUCTION SAMPLE–Z If the SAMPLE–Z instruction is loaded in the instruction register, all DQ pins are forced to an inactive drive state (High–Z) and the boundary scan register is connected between TDI and TDO when the TAP controller is moved to the shift–DR state. DEVICE SPECIFIC (PRIVATE) INSTRUCTION NO OP Do not use these instructions; they are reserved for future use. MCM69R738C•MCM69R820C 18 For More Information On This Product, Go to: www.freescale.com MOTOROLA FAST SRAM Freescale Semiconductor, Inc. STANDARD (PUBLIC) INSTRUCTION CODES Instruction EXTEST IDCODE SAMPLE/PRELOAD Code* 000 001** 100 Description Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all DQ pins to High–Z state. NOT IEEE 1149.1 COMPLIANT. Preloads ID register and places it between TDI and TDO. Does not affect RAM operation. Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does not affect RAM operation. Does not implement IEEE 1149.1 PRELOAD function. NOT IEEE 1149.1 COMPLIANT. Places the bypass register between TDI and TDO. Does not affect RAM operation. Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces all DQ pins to High–Z state. BYPASS SAMPLE–Z 111 010 * Instruction codes expressed in binary; MSB on left, LSB on right. ** Default instruction automatically loaded at power up and in test–logic–reset state. STANDARD (PRIVATE) INSTRUCTION CODES Freescale Semiconductor, Inc... Instruction NO OP NO OP NO OP Code* 011 101 110 Description Do not use these instructions; they are reserved for future use. Do not use these instructions; they are reserved for future use. Do not use these instructions; they are reserved for future use. * Instruction codes expressed in binary, MSB on left, LSB on right. 1 TEST–LOGIC RESET 0 RUN–TEST/ IDLE 1 SELECT DR–SCAN 0 1 CAPTURE–DR 0 SHIFT–DR 0 1 EXIT1–DR 0 PAUSE–DR 1 0 EXIT2–DR 1 UPDATE–DR 1 0 1 0 0 1 1 EXIT1–IR 0 PAUSE–IR 1 EXIT2–IR 1 UPDATE–IR 0 0 1 1 1 SELECT IR–SCAN 0 CAPTURE–IR 0 SHIFT–IR 0 1 0 NOTE: The value adjacent to each state transition represents the signal present at TMS at the rising edge of TCK. Figure 5. TAP Controller State Diagram MOTOROLA FAST SRAM For More Information On This Product, Go to: www.freescale.com MCM69R738C•MCM69R820C 19 Freescale Semiconductor, Inc. ORDERING INFORMATION (Order by Full Part Number) MCM Motorola Memory Prefix Part Number 69R738C 69R820C XX X X R = Tape and Reel, Blank = Tray Speed (4 = 4 ns, 4.4 = 4.4 ns, 5 = 5 ns, 6 = 6 ns) Package (ZP = PBGA) Full Part Numbers — MCM69R738CZP4 MCM69R738CZP4.4 MCM69R738CZP5 MCM69R738CZP6 MCM69R820CZP4 MCM69R820CZP4.4 MCM69R820CZP5 MCM69R820CZP6 MCM69R738CZP4R MCM69R738CZP4.4R MCM69R738CZP5R MCM69R738CZP6R MCM69R820CZP4R MCM69R820CZP4.4R MCM69R820CZP5R MCM69R820CZP6R PACKAGE DIMENSIONS Freescale Semiconductor, Inc... ZP PACKAGE 7 X 17 BUMP PBGA CASE 999–02 4X 0.20 119X C E B 7 6 54 3 2 1 A B C D E F G H J K L M N P R T U b 0.3 0.15 M M ABC A D2 D D1 16X e NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. ALL DIMENSIONS IN MILLIMETERS. 3. DIMENSION b IS THE MAXIMUM SOLDER BALL DIAMETER MEASURED PARALLEL TO DATUM A. 4. DATUM A, THE SEATING PLANE, IS DEFINED BY THE SPHERICAL CROWNS OF THE SOLDER BALLS. DIM A A1 A2 A3 D D1 D2 E E1 E2 b e MILLIMETERS MIN MAX ––– 2.40 0.50 0.70 1.30 1.70 0.80 1.00 22.00 BSC 20.32 BSC 19.40 19.60 14.00 BSC 7.62 BSC 11.90 12.10 0.60 0.90 1.27 BSC E2 TOP VIEW A3 6X e E1 BOTTOM VIEW 0.25 A 0.35 A 0.20 A A A2 SIDE VIEW SEATING PLANE A1 A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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