MPS3638

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Transistors Order this document by MPS3638/D PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER MPS3638,A 1 2 3 MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Total Device Dissipation @ TA = 25°C Derate above 25°C Total Device Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCES VCBO VEBO IC PD PD TJ, Tstg Value –25 –25 –25 –4.0 –500 625 5.0 1.5 12 – 55 to +150 Unit Vdc Vdc Vdc Vdc mAdc mW mW/°C Watts mW/°C °C CASE 29–04, STYLE 1 TO–92 (TO–226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA(1) RqJC Max 200 83.3 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (IC = –100 mAdc, VBE = 0) Collector – Emitter Sustaining Voltage(2) (IC = –10 mAdc, IB = 0) Collector – Base Breakdown Voltage (IC = –100 mAdc, IE = 0) Emitter – Base Breakdown Voltage (IE = –100 mAdc, IC = 0) Collector Cutoff Current (VCE = –15 Vdc, VBE = 0) (VCE = –15 Vdc, VBE = 0, TA = –65°C) Emitter Cutoff Current (VEB = –3.0 V, IC = 0) Base Current (VCE = –15 Vdc, VBE = 0) 1. RqJA is measured with the device soldered into a typical printed circuit board. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES — — IEBO IB — — –0.035 –2.0 –35 –0.035 nA –25 –25 –25 –4.0 — — — — Vdc Vdc Vdc Vdc mAdc mAdc v v Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 MPS3638,A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS(2) DC Current Gain (IC = –1.0 mAdc, VCE = –10 Vdc) (IC = –10 mAdc, VCE = –10 Vdc) hFE MPS3638A MPS3638 MPS3638A MPS3638 MPS3638A MPS3638 MPS3638A VCE(sat) — — VBE(sat) — –0.80 –1.1 –2.0 –0.25 –1.0 Vdc 80 20 100 30 100 20 20 — — — — — — — Vdc — (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –300 mAdc, VCE = –2.0 Vdc) Collector – Emitter Saturation Voltage (IC = –50 mAdc, IB = –2.5 mAdc) (IC = –300 mAdc, IB = –30 mAdc) Base – Emitter Saturation Voltage (IC = –50 mAdc, IB = –2.5 mAdc) (IC = –300 mAdc, IB = –30 mAdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (VCE = –3.0 Vdc, IC = –50 mAdc, f = 100 MHz) Output Capacitance (VCB = –10 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Small–Signal Current Gain (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) Output Admittance (IC = –10 mAdc, VCE = –10 Vdc, f = 1.0 kHz) MPS3638 MPS3638A hfe MPS3638 MPS3638A hoe 25 100 — — — 1.2 mmhos fT MPS3638 MPS3638A Cobo MPS3638 MPS3638A Cibo MPS3638 MPS3638A hie hre — — 26 15 — — — — 65 25 2000 kΩ X 10– 4 — — 20 10 pF 100 150 — — pF MHz SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time Turn–On Time Turn–Off Time (VCC = –10 Vdc, IC = –300 mAdc, IB1 = –30 mAdc) (VCC = –10 Vdc, IC = –300 mAdc, IB1 = –30 mAdc, IB2 = –30 mAdc) (IC = –300 mAdc, IB1 = –30 mAdc) (IC = –300 mAdc, IB1 = –30 mAdc, IB2 = 30 mAdc) td tr ts tf ton toff — — — — — — 20 70 140 70 75 170 ns ns ns ns ns ns 2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3638,A SWITCHING TIME EQUIVALENT TEST CIRCUIT – 30 V < 2 ns +2 V 0 – 16 V 1.0 kΩ 10 to 100 µs, DUTY CYCLE = 2% CS* < 10 pF 200 Ω +14 V 0 –16 V < 20 ns 1.0 kΩ 1.0 to 100 µs, DUTY CYCLE = 2% – 30 V 200 Ω CS* < 10 pF + 4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn–On Time Figure 2. Turn–Off Time TRANSIENT CHARACTERISTICS 25°C 30 20 CAPACITANCE (pF) 100°C 10 7.0 5.0 Ceb 3.0 Q, CHARGE (nC) 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.1 10 20 10 7.0 5.0 Ccb VCC = 30 V IC/IB = 10 QT QA 0.2 0.3 2.0 3.0 5.0 7.0 10 0.5 0.7 1.0 REVERSE VOLTAGE (VOLTS) 20 30 200 30 50 70 100 IC, COLLECTOR CURRENT (mA) 300 500 Figure 3. Capacitances Figure 4. Charge Data Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MPS3638,A TRANSIENT CHARACTERISTICS (Continued) 25°C 100°C 100 70 50 t r , RISE TIME (ns) t, TIME (ns) 30 20 tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10 100 70 50 30 20 VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 5. Turn–On Time Figure 6. Rise Time 200 IC/IB = 10 t s′, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts′ = ts – 1/8 tf 30 20 IC/IB = 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3638,A SMALL–SIGNAL CHARACTERISTICS NOISE FIGURE VCE = –10 Vdc, TA = 25°C Bandwidth = 1.0 Hz 10 10 f = 1 kHz 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 Ω IC = 500 µA, RS = 560 Ω IC = 50 µA, RS = 2.7 kΩ IC = 100 µA, RS = 1.6 kΩ NF, NOISE FIGURE (dB) 8 6 6 4 4 IC = 50 µA 100 µA 500 µA 1.0 mA 2 RS = OPTIMUM SOURCE RESISTANCE 2 0 0.01 0.02 0.05 0.1 0.2 0 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1k 2k 5k 10 k 20 k 50 k RS, SOURCE RESISTANCE (OHMS) f, FREQUENCY (kHz) Figure 8. Frequency Effects Figure 9. Source Resistance Effects h PARAMETERS VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C selected from both the 2N4402 and 2N4403 lines, and the This group of graphs illustrates the relationship between same units were used to develop the correspondingly– hfe and other “h” parameters for this series of transistors. To numbered curves on each graph. obtain these curves, a high–gain and a low–gain unit were 1000 700 500 hfe , CURRENT GAIN 300 200 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 hie , INPUT IMPEDANCE (OHMS) 100 k 50 k 20 k 10 k 5k 2k 1k 500 200 30 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 100 70 50 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain 20 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 hoe, OUTPUT ADMITTANCE (m mhos) 500 Figure 11. Input Impedance 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 2N4403 UNIT 1 2N4403 UNIT 2 2N4402 UNIT 1 2N4402 UNIT 2 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Motorola Small–Signal Transistors, FETs and Diodes Device Data Figure 13. Output Admittance 5 MPS3638,A STATIC CHARACTERISTICS 3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125°C 25°C 1.0 0.7 0.5 0.3 0.2 0.1 – 55°C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 Figure 14. DC Current Gain VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 IC = 1.0 mA 0.4 10 mA 100 mA 500 mA 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 1.0 0.8 VOLTAGE (VOLTS) TJ = 25°C VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ °C) 0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2 qVC for VCE(sat) 0.6 VBE(sat) @ VCE = 10 V 0.4 0.2 qVS for VBE 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 Figure 16. “On” Voltages Figure 17. Temperature Coefficients 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data MPS3638,A PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.115 ––– 0.135 ––– MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 2.93 ––– 3.43 ––– A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X–X DIM A B C D F G H J K L N P R V CASE 029–04 (TO–226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 MPS3638,A Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. 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