MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF18085A/D
Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN–PCS/cellular radio and WLL applications. Specified for GSM–GSM EDGE 1805 – 1880 MHz. • GSM and GSM EDGE Performance, Full Frequency Band (1805–1880 MHz) Power Gain – 15 dB (Typ) @ 85 Watts CW Efficiency – 52% (Typ) @ 85 Watts CW • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, @ P1dB Output Power, @ f = 1805 MHz • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
MRF18085A RF Power Field Effect Transistors MRF18085AR3 N–Channel Enhancement–Mode Lateral MOSFETs MRF18085ALSR3
The RF MOSFET Line
GSM/GSM EDGE 1.8 – 1.88 GHz, 85 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs
CASE 465–06, STYLE 1 NI–780 MRF18085A, MRF18085AR3
CASE 465A–06, STYLE 1 NI–780S MRF18085ALSR3
MAXIMUM RATINGS
Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 273 1.56 –65 to +200 200 Unit Vdc Vdc Watts W/°C °C °C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Symbol RθJC Max 0.64 Unit °C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Typical) M3 (Typical)
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 0
MOTOROLA RF Motorola, Inc. 2002 DEVICE DATA
MRF18085A MRF18085AR3 MRF18085ALSR3 1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 µAdc) Zero Gate Voltage Drain Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Common–Source Amplifier Power Gain @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) Drain Efficiency @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) Input Return Loss @ 85 W (2) (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) Pout, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 – 1880 MHz) Output Mismatch Stress @ P1dB (VDD = 26 Vdc, IDQ = 800 mA, f = 1805 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) Gps η IRL P1dB Ψ 13.5 48 — 83 15 52 –12 90 — — –9 — dB % dB Watts Crss — 3.6 — pF VGS(th) VGS(Q) VDS(on) gfs 2 2.5 — — — 3.9 0.15 6.0 4 4.5 — — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc µAdc µAdc Symbol Min Typ Max Unit
No Degradation In Output Power Before and After Test
(1) Part is internally matched both on input and output. (2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch consistency.
MRF18085A MRF18085AR3 MRF18085ALSR3 2
MOTOROLA RF DEVICE DATA
VGG
C7 + C4 R1 R2 C5 C6 R3 Z1 Z3 C2 Z2 C1 Z4 Z5 Z6 DUT Z7 Z8 Z9 Z10
C8
+
VDD C9
RF INPUT
Z11 C10 C3
Z12
RF OUTPUT
C1, C3, C6, C7 C2 C4 C5, C8 C9 C10 R1, R2 R3 Z1 Z2 Z3
10 pF Chip Capacitors, B Case, ATC 1.8 pF Chip Capacitor, B Case, ATC 10 mF, 35 V Tantalum Capacitor, AVX 1 nF Chip Capacitors, B Case, ATC 220 mF, 63 V Electrolytic Capacitor, Radial, Philips 0.3 pF Chip Capacitor, B Case, ATC 10 kW, 1/4 W Chip Resistors (1206) 1.0 kW, 1/4 W Chip Resistor (1206) 0.671″ x 0.087″ Microstrip 0.568″ x 0.087″ Microstrip 0.500″ x 0.098″ Microstrip Shorted Stub
Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 PCB Connectors
0.610″ x 00.118″ Microstrip 0.331″ x 1.153″ Microstrip 0.063″ x 1.153″ Microstrip 0.122″ x 0.925″ Microstrip 0.547″ x 0.925″ Microstrip 0.394″ x 0.177″ Microstrip 0.180″ x 0.087″ Microstrip 0.686″ x 0.087″ Microstrip 0.294″ x 0.087″ Microstrip Taconic TLX8, 0.8 mm Thickness “N” Type, Macom 3052–1648–10
Figure 1. 1.80 – 1.88 GHz Test Fixture Schematic
C9 C4 R1 C5 C6 R2 C2 C1 Strap R3 CUT OUT AREA C7 C8
C3 C10
MRF18085A C–PP–02–01–2–Rev0
Figure 2. 1.80 – 1.88 GHz Test Fixture Component Layout
MOTOROLA RF DEVICE DATA
MRF18085A MRF18085AR3 MRF18085ALSR3 3
TYPICAL CHARACTERISTICS
17 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 0 1 10 100 1000 IDQ = 1000 mA 800 mA 600 mA 400 mA VDD = 26 Vdc f = 1840 MHz TC = 25_C G ps , POWER GAIN (dB) 17 16 15 14 13 12 11 10 9 8 0.1 IDQ = 800 mA f = 1840 MHz TC = 25_C 1 10 Pout, OUTPUT POWER (WATTS) 32 V 28 V 24 V VDD = 20 V 100 1000
Pout, OUTPUT POWER (WATTS)
Figure 3. Power Gain versus Output Power
Figure 4. Power Gain versus Output Power
17 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 9 1 10 100 50_C TC = 25_C 85_C
Pout , OUTPUT POWER (WATTS)
VDD = 26 Vdc IDQ = 800 mA f = 1840 MHz
120 100 80 60 40 20 0 1800 VDD = 26 Vdc IDQ = 800 mA TC = 25_C
Pin = 8 W 4W
1W 0.5 W
1000
1820
1840
1860
1880
1900
Pout, OUTPUT POWER (WATTS)
f, FREQUENCY (MHz)
Figure 5. Power Gain versus Output Power
Figure 6. Output Power versus Frequency
17 16 G ps , POWER GAIN (dB) 15 14 13 12 11 10 1750 1800 1850 f, FREQUENCY (MHz) IRL @ 30 W IRL @ 80 W Gps @ 30 W Gps @ 80 W
0 -4 -8 -12 -16 -20 VDD = 26 Vdc IDQ = 800 mA TC = 25_C 1900 -24
16 IRL, INPUT RETURN LOSS (dB) G ps , POWER GAIN (dB) 15 14 13 12 11 VDD = 26 Vdc IDQ = 800 mA f = 1840 MHz TC = 25_C
Gps
60 50 40 30 20 η, DRAIN EFFICIENCY (%)
η 0.1 1 10 100
10 0 1000
-28 1950
10
Pout, OUTPUT POWER (WATTS)
Figure 7. Power Gain versus Frequency
Figure 8. Power Gain and Efficiency versus Output Power
MRF18085A MRF18085AR3 MRF18085ALSR3 4
MOTOROLA RF DEVICE DATA
Zo = 10 Ω
Zsource f = 1710 MHz
f = 1710 MHz f = 1990 MHz
Zload
f = 1990 MHz
VDD = 26 V, IDQ = 800 mA, Pout = 85 W CW f MHz 1710 1785 1805 1880 1930 1960 1990 Zsource Ω 1.13 + j3.62 1.61 + j4.23 1.69 + j4.34 2.83 + j5.25 3.00 + j5.18 4.39 + j4.97 6.59 + j4.74 Zload Ω 1.79 + j2.88 1.82 + j3.15 1.90 + j2.66 2.09 + j2.77 2.01 + j2.44 2.01 + j2.57 1.79 + j2.37
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 9. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF18085A MRF18085AR3 MRF18085ALSR3 5
NOTES
MRF18085A MRF18085AR3 MRF18085ALSR3 6
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
B
G
1
2X
Q bbb
M
TA
M
B
M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F G H K M N Q R S aaa bbb ccc INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF
3
B
(FLANGE)
2
K
D bbb
M
TA
M
B
M
M
(INSULATOR)
R
M
(LID)
bbb N H C
(LID)
M
TA TA
B B
M
ccc aaa
M
TA TA
M
B B
M
S
M M M M M
(INSULATOR) M
ccc
F E A A
(FLANGE)
T
SEATING PLANE
CASE 465–06 ISSUE F NI–780 MRF18085A, MRF18085AR3
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
4X U (FLANGE)
B
1
4X Z (LID)
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 --0.040 --0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 --1.02 --0.76 0.127 REF 0.254 REF 0.381 REF
B
(FLANGE)
2
2X
K
D bbb
M
TA
M
B
M
N
(LID)
R
M
(LID)
ccc M H
3
TA
M
B
M
ccc aaa
M
TA TA
M
B B
M
(INSULATOR)
S
M
(INSULATOR) M
bbb C
M
TA
B
M
M
M
F E A A
(FLANGE)
T
SEATING PLANE
CASE 465A–06 ISSUE F NI–780S MRF18085ALSR3
STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE
MOTOROLA RF DEVICE DATA
MRF18085A MRF18085AR3 MRF18085ALSR3 7
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and the Stylized M Logo are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola and the Stylized M Logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors
MRF18085A MRF18085AR3 MRF18085ALSR3 ◊ 8
MOTOROLA RF DEVICE DATA
MRF18085A/D