MRF21010LSR1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MRF21010/D The RF MOSFET Line MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power — 2.1 Watts Power Gain — 13.5 dB Efficiency — 21% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel. • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. 2170 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs Freescale Semiconductor, Inc... CASE 360B - 05, STYLE 1 NI - 360 MRF21010LR1 CASE 360C - 05, STYLE 1 NI - 360S MRF21010LSR1 MAXIMUM RATINGS Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 65 - 0.5, +15 43.75 0.25 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C THERMAL CHARACTERISTICS Max 5.5 Unit °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MOTOROLA RF  Motorola, Inc. 2003 DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21010LR1 MRF21010LSR1 1 Freescale Semiconductor, Inc. ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID =10 µA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 50 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(th) VGS(Q) VDS(on) gfs 2.5 2.5 — — 3 4 0.4 0.95 4 4.5 0.5 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc µAdc µAdc Symbol Min Typ Max Unit Freescale Semiconductor, Inc... Drain - Source On - Voltage (VGS = 10 V, ID = 0.5 A) Forward Transconductance (VDS = 10 V, ID = 1 A) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two - Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Input Return Loss (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz) Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Crss — 1 — pF Gps 12 13.5 — dB η 31 35 — % IMD — - 35 - 30 dBc IRL — - 12 - 10 dB P1dB Gps — — 11 12 — — W dB η — 42 — % Ψ No Degradation In Output Power Before and After Test MRF21010LR1 MRF21010LSR1 2 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. VGG + C3 C4 C5 Z4 Z5 RF OUTPUT R1 R2 C6 C7 + C8 + C9 VDD RF INPUT DUT Z1 Z2 C2 C1 Z3 Z6 Z7 C10 Z8 Freescale Semiconductor, Inc... Z1 Z2 Z3 Z4 Z5 0.964″ 0.905″ 0.433″ 1.068″ 0.752″ x 0.087″ x 0.087″ x 0.512″ x 0.087″ x 0.087″ Microstrip Microstrip Microstrip Microstrip Microstrip Z6 Z7 Z8 PCB 0.453″ x 1.118″ Microstrip 0.921″ x 0.154″ Microstrip 0.925″ x 0.087″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55 Figure 1. MRF21010L Test Circuit Schematic Table 1. MRF21010L Test Circuit Component Designations and Values Part C1 * C2 C3, C9 C4, C7 C5, C6 C8 C10 N1, N2 R1 R2 (eared) (earless) Description 2.2 pF Chip Capacitor, B Case 1.8 pF Chip Capacitor, B Case 0.5 pF Chip Capacitor, B Case 10 µF, 35 V Tantalum Chip Capacitors 1 nF Chip Capacitors, B Case 5.6 pF Chip Capacitors, B Case 470 µF, 63 V Electrolytic Capacitor 10 pF Chip Capacitor, B Case Type N Connector Flange Mounts 1.0 kW Chip Resistor (0805) 12 W Chip Resistor (0805) 100B100GW 3052 - 1648 - 10 ATC Macom Value, P/N or DWG 100B2R2BW 100B1R8BW 100B0R5BW 293D106X9035D2T 100B102JW 100B5R6BW Manufacturer ATC ATC ATC Sprague - Vishay ATC ATC * Piece part depending on eared / earless version of the device. C8 VGG C3 R1 R2 C4 C5 C6 C7 C9 VDD RF Input C2 C1 C10 RF Output CUTOUT AREA MRF21010 C−XM−00−001−01 Figure 2. MRF21010L Test Circuit Component Layout MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21010LR1 MRF21010LSR1 3 Freescale Semiconductor, Inc. VGG V DD Ground C1 R2 R1 T1 R3 C6 T2 P1 C4 C5 R4 C2 C3 C7 R6 R5 C8 L1 L2 L3 L4 C9 L5 Freescale Semiconductor, Inc... C10 MRF21010 C−XM−99−001−01 Figure 3. MRF21010L Demonstration Board Component Layout Table 2. MRF21010L Demonstration Board Component Designations and Values Designators C1 C2, C6 C3, C4 C5 C7 C8, C10 C9 L1 L2 L3 L4 L5 R1, R6 R2, R3 R4 R5 P1 T1 T2 PCB Description 1 mF Chip Capacitor (0805), AVX #08053G105ZATEA 10 mF, 35 V Tantalum Capacitors, Vishay - Sprague #293D106X9035D 6.8 pF Chip Capacitors, ACCU - P (0805), AVX #08051J6R8CBT 10 nF Chip Capacitor (0805), AVX #08055C103KATDA 1.5 pF Chip Capacitor, ACCU - P (0805), AVX #08051J2R2BBT 0.5 pF Chip Capacitors, ACCU - P (0805), AVX #08051J0R5BBT 10 pF Chip Capacitor, ACCU - P (0805), AVX #08055J100GBT 19 mm × 1.07 mm 7.7 mm × 13.8 mm 9.3 mm × 22 mm 17.7 mm × 3.5 mm 3.4 mm × 1.5 mm 10 W, 1/8 W Chip Resistors (0805) 1 kW, 1/8 W Chip Resistors (0805) 2.2 kW, 1/8 W Chip Resistor (0805) 0 W, 1/8 W Chip Resistor (0805) 5 kW Potentiometer CMS Cermet Multi - Turn, Bourns #3224W Voltage Regulator, Micro - 8, Motorola #LP2951 Bipolar NPN Transistor, SOT - 23, Motorola #BC847 Rogers RO4350, 0.5 mm, εr = 3.53 MRF21010LR1 MRF21010LSR1 4 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. TYPICAL CHARACTERISTICS η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 2000 2080 2110 2140 2170 f, FREQUENCY (MHz) 2200 Gps IMD IRL VDD = 28 Vdc, Pout = 10 W (PEP), IDQ = 100 mA Two Tone Measurement, 100 kHz Tone Spacing η 0 −5 −10 −15 −20 −25 −30 −35 −40 2280 30 VDD = 28 Vdc, IDQ = 130 mA, f = 2140 MHz Channel Spacing 5 MHz, BW 4.096 MHz 25 (15 Channels) η Gps −10 ACPR, ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc) −20 20 −30 15 −40 10 ACPR −50 −60 3.5 5 0.5 1.5 2 2.5 3 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA 1 Freescale Semiconductor, Inc... Figure 4. Class AB Broadband Circuit Performance Figure 5. W - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power IMD, INTERMODULATION DISTORTION (dBc) IMD, INTERMODULATION DISTORTION (dBc) −25 −30 −35 −40 −45 −50 −55 −60 0.1 1 130 mA 80 mA 100 mA 150 mA VDD = 28 Vdc, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing −20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 0.1 1 10 100 7th Order 5th Order VDD = 28 Vdc, IDQ = 100 mA, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing 3rd Order 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion versus Output Power Figure 7. Intermodulation Distortion Products versus Output Power 14.5 VDD = 28 Vdc, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing 14.0 G ps , POWER GAIN (dB) 150 mA 13.5 130 mA 100 mA 13.0 80 mA G ps , POWER GAIN (dB) 15 Pout = 10 W (PEP), IDQ = 100 mA, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing −30 −32 −34 Gps −36 −38 IMD −40 14 13 12.5 12.0 0.1 1 10 100 12 22 Pout, OUTPUT POWER (WATTS) PEP 26 28 30 VDD, DRAIN VOLTAGE (VOLTS) −42 32 Figure 8. Power Gain versus Output Power Figure 9. Intermodulation and Gain versus Supply Voltage MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21010LR1 MRF21010LSR1 5 Freescale Semiconductor, Inc. f = 1990 MHz Zload f = 2230 MHz Z o = 10 Ω f = 1990 MHz Zsource Freescale Semiconductor, Inc... f = 2230 MHz VDD = 28 V, IDQ = 100 mA, Pout = P1dB CW f MHz 1990 2110 2230 Zsource Ω 2.85 - j4.38 2.89 - j5.04 2.73 - j6.19 Zload Ω 2.93 - j1.71 2.76 - j2.28 2.83 - j2.59 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Input Matching Network Device Under Test Output Matching Network Z source Z load Figure 10. Series Equivalent Input and Output Impedance MRF21010LR1 MRF21010LSR1 6 For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE DATA Freescale Semiconductor, Inc. PACKAGE DIMENSIONS 2X B G 1 Q aaa M TA M B M NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF 3 (FLANGE) 2X B 2 D bbb M T A 2X M K B M (LID) R (LID) N ccc M TA C M B M ccc H M TA M B M Freescale Semiconductor, Inc... E F T (INSULATOR) SEATING PLANE (INSULATOR) S DIM A B C D E F G H K M N Q R S aaa bbb ccc M bbb M TA M B M aaa M TA M B M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A A CASE 360B - 05 ISSUE F NI - 360 MRF21010LR1 A B (FLANGE) A 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. (FLANGE) B 2 2X D M 2X K M (LID) bbb TA M B R (LID) N ccc M M TA M B F M ccc E TA M B M H C (INSULATOR) S PIN 3 bbb M (INSULATOR) M T M SEATING PLANE M aaa M TA M B M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF TA B 360C- 05 ISSUE D NI - 360S MRF21010LSR1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MOTOROLA RF DEVICE DATA For More Information On This Product, Go to: www.freescale.com MRF21010LR1 MRF21010LSR1 7 Freescale Semiconductor, Inc. Freescale Semiconductor, Inc... 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Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3- 3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF21010LR1 MRF21010LSR1 8 ◊ For More Information On This Product, Go to: www.freescale.com MOTOROLA RF DEVICE MRF21010/D DATA