MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
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The RF MOSFET Line
MRF21010LR1 RF Power Field Effect Transistors MRF21010LSR1
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications. • Typical W - CDMA Performance: - 45 dBc ACPR, 2140 MHz, 28 Volts, 5 MHz Offset/4.096 MHz BW, 15 DTCH Output Power — 2.1 Watts Power Gain — 13.5 dB Efficiency — 21% • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large - Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel. • Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. 2170 MHz, 10 W, 28 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs
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CASE 360B - 05, STYLE 1 NI - 360 MRF21010LR1
CASE 360C - 05, STYLE 1 NI - 360S MRF21010LSR1
MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 65 - 0.5, +15 43.75 0.25 - 65 to +150 200 Unit Vdc Vdc W W/°C °C °C
THERMAL CHARACTERISTICS
Max 5.5 Unit °C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum)
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 7
MOTOROLA RF Motorola, Inc. 2003 DEVICE DATA
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MRF21010LR1 MRF21010LSR1 1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain - Source Breakdown Voltage (VGS = 0 Vdc, ID =10 µA) Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 V, ID = 50 µA) Gate Quiescent Voltage (VDS = 28 V, ID = 100 mA) VGS(th) VGS(Q) VDS(on) gfs 2.5 2.5 — — 3 4 0.4 0.95 4 4.5 0.5 — Vdc Vdc Vdc S V(BR)DSS IDSS IGSS 65 — — — — — — 10 1 Vdc µAdc µAdc Symbol Min Typ Max Unit
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Drain - Source On - Voltage (VGS = 10 V, ID = 0.5 A) Forward Transconductance (VDS = 10 V, ID = 1 A) DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two - Tone Common Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Two - Tone Drain Efficiency (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Input Return Loss (VDD = 28 Vdc, Pout = 10 W PEP, IDQ = 100 mA, f1 = 2110 MHz, f2 = 2170 MHz, Tone Spacing = 100 KHz) Output Power, 1 dB Compression Point, CW (VDD = 28 Vdc, IDQ = 100 mA, f = 2170 MHz) Common - Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) Drain Efficiency (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz) Output Mismatch Stress (VDD = 28 Vdc, Pout = 10 W CW, IDQ = 100 mA, f = 2170 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests)
Crss
—
1
—
pF
Gps
12
13.5
—
dB
η
31
35
—
%
IMD
—
- 35
- 30
dBc
IRL
—
- 12
- 10
dB
P1dB Gps
— —
11 12
— —
W dB
η
—
42
—
%
Ψ
No Degradation In Output Power Before and After Test
MRF21010LR1 MRF21010LSR1 2
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
VGG + C3 C4 C5 Z4 Z5 RF OUTPUT R1 R2 C6 C7 + C8 + C9 VDD
RF INPUT
DUT Z1 Z2 C2 C1 Z3
Z6
Z7 C10
Z8
Freescale Semiconductor, Inc...
Z1 Z2 Z3 Z4 Z5
0.964″ 0.905″ 0.433″ 1.068″ 0.752″
x 0.087″ x 0.087″ x 0.512″ x 0.087″ x 0.087″
Microstrip Microstrip Microstrip Microstrip Microstrip
Z6 Z7 Z8 PCB
0.453″ x 1.118″ Microstrip 0.921″ x 0.154″ Microstrip 0.925″ x 0.087″ Microstrip Taconic TLX8 - 0300, 0.030″, εr = 2.55
Figure 1. MRF21010L Test Circuit Schematic Table 1. MRF21010L Test Circuit Component Designations and Values
Part C1 * C2 C3, C9 C4, C7 C5, C6 C8 C10 N1, N2 R1 R2 (eared) (earless) Description 2.2 pF Chip Capacitor, B Case 1.8 pF Chip Capacitor, B Case 0.5 pF Chip Capacitor, B Case 10 µF, 35 V Tantalum Chip Capacitors 1 nF Chip Capacitors, B Case 5.6 pF Chip Capacitors, B Case 470 µF, 63 V Electrolytic Capacitor 10 pF Chip Capacitor, B Case Type N Connector Flange Mounts 1.0 kW Chip Resistor (0805) 12 W Chip Resistor (0805) 100B100GW 3052 - 1648 - 10 ATC Macom Value, P/N or DWG 100B2R2BW 100B1R8BW 100B0R5BW 293D106X9035D2T 100B102JW 100B5R6BW Manufacturer ATC ATC ATC Sprague - Vishay ATC ATC
* Piece part depending on eared / earless version of the device.
C8
VGG
C3 R1 R2 C4 C5 C6 C7 C9
VDD
RF Input
C2 C1 C10
RF Output
CUTOUT AREA
MRF21010 C−XM−00−001−01
Figure 2. MRF21010L Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
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MRF21010LR1 MRF21010LSR1 3
Freescale Semiconductor, Inc.
VGG V DD Ground
C1 R2
R1 T1 R3 C6 T2 P1 C4 C5
R4
C2 C3 C7
R6 R5 C8 L1 L2 L3 L4 C9 L5
Freescale Semiconductor, Inc...
C10
MRF21010 C−XM−99−001−01
Figure 3. MRF21010L Demonstration Board Component Layout
Table 2. MRF21010L Demonstration Board Component Designations and Values
Designators C1 C2, C6 C3, C4 C5 C7 C8, C10 C9 L1 L2 L3 L4 L5 R1, R6 R2, R3 R4 R5 P1 T1 T2 PCB Description 1 mF Chip Capacitor (0805), AVX #08053G105ZATEA 10 mF, 35 V Tantalum Capacitors, Vishay - Sprague #293D106X9035D 6.8 pF Chip Capacitors, ACCU - P (0805), AVX #08051J6R8CBT 10 nF Chip Capacitor (0805), AVX #08055C103KATDA 1.5 pF Chip Capacitor, ACCU - P (0805), AVX #08051J2R2BBT 0.5 pF Chip Capacitors, ACCU - P (0805), AVX #08051J0R5BBT 10 pF Chip Capacitor, ACCU - P (0805), AVX #08055J100GBT 19 mm × 1.07 mm 7.7 mm × 13.8 mm 9.3 mm × 22 mm 17.7 mm × 3.5 mm 3.4 mm × 1.5 mm 10 W, 1/8 W Chip Resistors (0805) 1 kW, 1/8 W Chip Resistors (0805) 2.2 kW, 1/8 W Chip Resistor (0805) 0 W, 1/8 W Chip Resistor (0805) 5 kW Potentiometer CMS Cermet Multi - Turn, Bourns #3224W Voltage Regulator, Micro - 8, Motorola #LP2951 Bipolar NPN Transistor, SOT - 23, Motorola #BC847 Rogers RO4350, 0.5 mm, εr = 3.53
MRF21010LR1 MRF21010LSR1 4
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) η, DRAIN EFFICIENCY (%),G ps , POWER GAIN (dB) IRL, INPUT RETURN LOSS (dB) IMD, INTERMODULATION DISTORTION (dBc) 40 35 30 25 20 15 10 5 0 2000 2080 2110 2140 2170 f, FREQUENCY (MHz) 2200 Gps IMD IRL VDD = 28 Vdc, Pout = 10 W (PEP), IDQ = 100 mA Two Tone Measurement, 100 kHz Tone Spacing η 0 −5 −10 −15 −20 −25 −30 −35 −40 2280 30 VDD = 28 Vdc, IDQ = 130 mA, f = 2140 MHz Channel Spacing 5 MHz, BW 4.096 MHz 25 (15 Channels) η Gps −10 ACPR, ADJACENT CHANNEL POWER RATIO (dB) IMD, INTERMODULATION DISTORTION (dBc)
−20
20
−30
15
−40
10
ACPR
−50 −60 3.5
5 0.5
1.5 2 2.5 3 Pout, OUTPUT POWER (WATTS Avg.) W−CDMA
1
Freescale Semiconductor, Inc...
Figure 4. Class AB Broadband Circuit Performance
Figure 5. W - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−25 −30 −35 −40 −45 −50 −55 −60 0.1 1 130 mA 80 mA 100 mA 150 mA VDD = 28 Vdc, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing
−20 −25 −30 −35 −40 −45 −50 −55 −60 −65 −70 0.1 1 10 100 7th Order 5th Order VDD = 28 Vdc, IDQ = 100 mA, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing 3rd Order
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion versus Output Power
Figure 7. Intermodulation Distortion Products versus Output Power
14.5 VDD = 28 Vdc, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing 14.0 G ps , POWER GAIN (dB) 150 mA 13.5 130 mA 100 mA 13.0 80 mA G ps , POWER GAIN (dB)
15 Pout = 10 W (PEP), IDQ = 100 mA, f = 2140 MHz Two Tone Measurement, 100 kHz Tone Spacing
−30 −32 −34 Gps −36 −38 IMD −40
14
13
12.5 12.0 0.1
1
10
100
12 22
Pout, OUTPUT POWER (WATTS) PEP
26 28 30 VDD, DRAIN VOLTAGE (VOLTS)
−42 32
Figure 8. Power Gain versus Output Power
Figure 9. Intermodulation and Gain versus Supply Voltage
MOTOROLA RF DEVICE DATA
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MRF21010LR1 MRF21010LSR1 5
Freescale Semiconductor, Inc.
f = 1990 MHz Zload f = 2230 MHz Z o = 10 Ω
f = 1990 MHz Zsource
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f = 2230 MHz
VDD = 28 V, IDQ = 100 mA, Pout = P1dB CW f MHz 1990 2110 2230 Zsource Ω 2.85 - j4.38 2.89 - j5.04 2.73 - j6.19 Zload Ω 2.93 - j1.71 2.76 - j2.28 2.83 - j2.59
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 10. Series Equivalent Input and Output Impedance
MRF21010LR1 MRF21010LSR1 6
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MOTOROLA RF DEVICE DATA
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
2X
B
G
1
Q aaa
M
TA
M
B
M
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF
3 (FLANGE) 2X
B
2
D bbb M T A
2X M
K
B
M
(LID)
R
(LID)
N
ccc
M
TA C
M
B
M
ccc H
M
TA
M
B
M
Freescale Semiconductor, Inc...
E
F
T
(INSULATOR)
SEATING PLANE
(INSULATOR)
S
DIM A B C D E F G H K M N Q R S aaa bbb ccc
M
bbb
M
TA
M
B
M
aaa
M
TA
M
B
M
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
A
A
CASE 360B - 05 ISSUE F NI - 360 MRF21010LR1
A B
(FLANGE)
A
1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY.
(FLANGE)
B
2 2X
D
M
2X
K
M (LID)
bbb
TA
M
B
R
(LID)
N
ccc
M
M
TA
M
B F
M
ccc E
TA
M
B
M
H
C
(INSULATOR)
S
PIN 3 bbb
M
(INSULATOR)
M
T
M
SEATING PLANE M
aaa
M
TA
M
B
M
DIM A B C D E F H K M N R S aaa bbb ccc
INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF
MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF
TA
B
360C- 05 ISSUE D NI - 360S MRF21010LSR1
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
MOTOROLA RF DEVICE DATA
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MRF21010LR1 MRF21010LSR1 7
Freescale Semiconductor, Inc.
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MRF21010LR1 MRF21010LSR1 8
◊
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MOTOROLA RF DEVICE MRF21010/D DATA