MRF9060

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Two–Tone Performance at 945 MHz, 26 Volts Output Power — 60 Watts PEP Power Gain — 17 dB Efficiency — 40% IMD — –31 dBc • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large–Signal Impedance Parameters • In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. MRF9060R1 MRF9060SR1 945 MHz, 60 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 360B–05, STYLE 1 NI–360 MRF9060R1 CASE 360C–05, STYLE 1 NI–360S MRF9060SR1 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C MRF9060R1 MRF9060SR1 Storage Temperature Range Operating Junction Temperature Tstg TJ Symbol VDSS VGS PD Value 65 –0.5, +15 159 0.91 219 1.25 –65 to +200 200 Unit Vdc Vdc Watts W/°C Watts W/°C °C °C ESD PROTECTION CHARACTERISTICS Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case MRF9060R1 MRF9060SR1 Symbol RθJC Max 1.1 0.8 Unit °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 4 MOTOROLA RF  Motorola, Inc. 2002 DEVICE DATA MRF9060R1 MRF9060SR1 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 450 mAdc) Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1.3 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss — — — 98 50 2 — — — pF pF pF (continued) VGS(th) VGS(Q) VDS(on) gfs 2 — — — 2.9 3.7 0.17 5.3 4 — 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit MRF9060R1 MRF9060SR1 2 MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 450 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f1 = 945.0 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 60 W CW, IDQ = 450 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Gps 16 17 — dB Symbol Min Typ Max Unit η 36 40 — % IMD — –31 –28 dBc IRL — –16 –9 dB Gps — 17 — dB η — 39 — % IMD — –31 — dBc IRL — –16 — dB P1dB — 70 — W Gps — 17 — dB η — 51 — % Ψ No Degradation In Output Power MOTOROLA RF DEVICE DATA MRF9060R1 MRF9060SR1 3 VGG C6 RF INPUT B1 + C7 L1 C4 Z1 C1 Z2 Z3 Z4 C2 Z5 Z6 Z7 C3 Z8 C5 Z9 Z10 DUT C9 Z11 Z12 Z13 L2 B2 C13 + C15 + C16 + C17 VDD Z14 Z15 Z16 C14 Z17 RF OUTPUT C8 C10 C11 C12 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 0.240″ x 0.060″ Microstrip 0.240″ x 0.060″ Microstrip 0.500″ x 0.100″ Microstrip 0.180″ x 0.270″ Microstrip 0.350″ x 0.270″ Microstrip 0.270″ x 0.520 x 0.140″ Taper 0.170″ x 0.520″ Microstrip 0.410″ x 0.520″ Microstrip 0.060″ x 0.520″ Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 0.360″ x 0.270″ Microstrip 0.060″ x 0.270″ Microstrip 0.110″ x 0.060″ Microstrip 0.330″ x 0.060″ Microstrip 0.230″ x 0.060″ Microstrip 0.740″ x 0.060″ Microstrip 0.130″ x 0.060″ Microstrip 0.340″ x 0.060″ Microstrip Figure 1. 945 MHz Broadband Test Circuit Schematic Table 1. 945 MHz Broadband Test Circuit Component Designations and Values Part B1 B2 C1, C7, C13, C14 C2, C3, C11 C4, C5, C8, C9 C6, C15, C16 C10 C12 C17 L1, L2 N1, N2 WB1, WB2 Board Material PCB Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors, B Case 0.8–8.0 Gigatrim Variable Capacitors 10 pF Chip Capacitors, B Case 10 mF, 35 V Tantalum Chip Capacitor 3.0 pF Chip Capacitor, B Case 0.5 pF Chip Capacitor, B Case (MRF9060) 0.7 pF Chip Capacitor, B Case (MRF9060S) 220 mF Electrolytic Chip Capacitor 12.5 nH Inductors N–Type Panel Mount, Stripline 10 mil Brass Wear Blocks 30 mil Glass Teflon, εr = 3.55 Copper Clad, 1 oz Cu Etched Circuit Board RF–35–0300 MRF9060 900 MHz, Rev. 2 Taconic Description Value, P/N or DWG 95F786 95F787 100B470JP 500X 44F3360 100B100JP 500X 93F2975 100B3R0JP 500X 100B0R5BP 500X 100B0R7BP 500X 14F185 A04T–5 3052–1648–10 Manufacturer Newark Newark ATC Newark ATC Newark ATC ATC ATC Newark Coilcraft Avnet MRF9060R1 MRF9060SR1 4 MOTOROLA RF DEVICE DATA C6 VDD C17 VGG B1 C7 B2 C13 C15 C16 C14 C10 C11 C12 OUTPUT L1 INPUT C1 C2 C3 C4 WB1 CUT OUT AREA C5 WB2 C8 C9 L2 MRF9060 900 MHz Rev-02 Figure 2. 930 – 960 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF9060R1 MRF9060SR1 5 TYPICAL CHARACTERISTICS h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) -10 -12 -14 -16 -18 18 17 G ps , POWER GAIN (dB) 16 15 14 13 12 11 10 930 IRL IMD Gps h VDD = 26 Vdc Pout = 60 W (PEP) IDQ = 450 mA Two-Tone Measurement, 100 kHz Tone Spacing 50 45 40 35 -30 -32 -34 -36 935 940 945 950 f, FREQUENCY (MHz) 955 -38 960 Figure 3. Class AB Broadband Circuit Performance IDQ = 650 mA 500 mA IMD, INTERMODULATION DISTORTION (dBc) 18 17.5 G ps , POWER GAIN (dB) 17 16.5 16 -20 -25 -30 -35 -40 -45 -50 -55 -60 450 mA 650 mA 500 mA VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 100 IDQ = 275 mA 450 mA 275 mA 15.5 15 1 VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 10 100 Pout, OUTPUT POWER (WATTS) PEP 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 4. Power Gain versus Output Power Figure 5. Intermodulation Distortion versus Output Power 0 IMD, INTERMODULATION DISTORTION (dBc) -10 -20 -30 -40 -50 -60 -70 0.1 5th Order 7th Order 100 3rd Order VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz IRL, INPUT RETURN LOSS (dB) 20 18 Gps, POWER GAIN (dB) 16 14 12 10 8 VDD = 26 Vdc IDQ = 450 mA f = 945 MHz 10 Pout, OUTPUT POWER (WATTS) AVG. 100 h Gps 60 50 40 30 20 10 0 h, DRAIN EFFICIENCY (%) 1 10 Pout, OUTPUT POWER (WATTS) PEP Figure 6. Intermodulation Distortion Products versus Output Power Figure 7. Power Gain and Efficiency versus Output Power MRF9060R1 MRF9060SR1 6 MOTOROLA RF DEVICE DATA Gps 16 Gps, POWER GAIN (dB) 14 h 12 10 8 6 IMD 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc IDQ = 450 mA f1 = 945 MHz f2 = 945.1 MHz 40 20 0 -20 -40 -60 Figure 8. Power Gain, Efficiency, and IMD versus Output Power MOTOROLA RF DEVICE DATA h, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 18 60 MRF9060R1 MRF9060SR1 7 Zin f = 930 MHz Zo = 5 Ω f = 960 MHz ZOL* f = 930 MHz f = 960 MHz VDD = 26 V, IDQ = 450 mA, Pout = 60 W PEP f MHz 930 945 960 Zin Zin Ω 0.80 + j0.10 0.80 + j0.05 0.81 + j0.10 ZOL* Ω 2.08 – j0.65 2.07 – j0.38 2.04 – j0.37 = Complex conjugate of source impedance. ZOL* = Complex conjugate of the optimum load impedance at a given output power, voltage, IMD, bias current and frequency. Note: ZOL* was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. Input Matching Network Device Under Test Output Matching Network Z in Z * OL Figure 9. Series Equivalent Input and Output Impedance MRF9060R1 MRF9060SR1 8 MOTOROLA RF DEVICE DATA NOTES MOTOROLA RF DEVICE DATA MRF9060R1 MRF9060SR1 9 NOTES MRF9060R1 MRF9060SR1 10 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS 2X B G 1 Q aaa M TA M B M 3 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. INCHES MIN MAX 0.795 0.805 0.225 0.235 0.125 0.175 0.210 0.220 0.055 0.065 0.004 0.006 0.562 BSC 0.077 0.087 0.220 0.250 0.355 0.365 0.357 0.363 0.125 0.135 0.227 0.233 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.19 20.45 5.72 5.97 3.18 4.45 5.33 5.59 1.40 1.65 0.10 0.15 14.28 BSC 1.96 2.21 5.59 6.35 9.02 9.27 9.07 9.22 3.18 3.43 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF B (FLANGE) 2X 2 D bbb M T A 2X M K R (LID) B M ccc N (LID) M TA M B M ccc M TA C M B M H F E S (INSULATOR) T M (INSULATOR) SEATING PLANE aaa TA M M TA M B M DIM A B C D E F G H K M N Q R S aaa bbb ccc bbb M B M A A CASE 360B–05 ISSUE F NI–360 MRF9060R1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE A B A (FLANGE) 1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. B (FLANGE) 2X 2 2X K M D M bbb TA M B R (LID) ccc N (LID) M TA M B F M ccc E M TA M B M H C PIN 3 bbb M SEATING PLANE M S (INSULATOR) M (INSULATOR) T M aaa M TA M B M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF TA B CASE 360C–05 ISSUE D NI–360S MRF9060SR1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MOTOROLA RF DEVICE DATA MRF9060R1 MRF9060SR1 11 Motorola reserves the right to make changes without further notice to any products herein. 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MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. E Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9060R1 MRF9060SR1 12 ◊ MRF9060/D MOTOROLA RF DEVICE DATA