MUN5130DW1

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MUN5111DW1T1/D Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5111DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low–power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel. MUN5111DW1T1 SERIES Motorola Preferred Devices 6 5 4 1 2 3 CASE 419B–01, STYLE 1 SOT–363 (3) (2) R1 R2 (1) Q1 Q2 R2 (4) (5) R1 (6) MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Rating Collector–Base Voltage Collector–Emitter Voltage Collector Current Symbol VCBO VCEO IC Value – 50 –50 –100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Thermal Resistance — Junction–to–Ambient (surface mounted) Operating and Storage Temperature Range Total Package Dissipation @ TA = 25°C(1) RθJA TJ, Tstg PD 833 – 65 to +150 *150 °C/W °C mW DEVICE MARKING AND RESISTOR VALUES: MUN5111DW1T1 SERIES Device MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1(2) MUN5116DW1T1(2) MUN5130DW1T1(2) MUN5131DW1T1(2) MUN5132DW1T1(2) MUN5133DW1T1(2) MUN5134DW1T1(2) MUN5135DW1T1(2) Marking 0A 0B 0C 0D 0E 0F 0G 0H 0J 0K 0L 0M R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 R2 (K) 10 22 47 47 ∞ ∞ 1.0 2.2 4.7 47 47 47 1. Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended footprint. 2. New resistor combinations. Updated curves to follow in subsequent data sheets. Thermal Clad is a trademark of the Bergquist Company Preferred devices are Motorola recommended choices for future use and best overall value. REV 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data © Motorola, Inc. 1997 1 MUN5111DW1T1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Base Cutoff Current (VCB = –50 V, IE = 0) Collector–Emitter Cutoff Current (VCE = – 50 V, IB = 0) Emitter–Base Cutoff Current (VEB = – 6.0 V, IC = 0) MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 ICBO ICEO IEBO — — — — — — — — — — — — — — – 50 –50 — — — — — — — — — — — — — — — — –100 –500 –0.5 –0.2 –0.1 –0.2 –0.9 –1.9 –4.3 –2.3 –1.5 –0.18 –0.13 –0.2 — — nAdc nAdc mAdc Collector–Base Breakdown Voltage (IC = –10 µA, IE = 0) Collector–Emitter Breakdown Voltage(3) (IC = – 2.0 mA, IB = 0) V(BR)CBO V(BR)CEO Vdc Vdc ON CHARACTERISTICS(3) DC Current Gain (VCE = –10 V, IC = – 5.0 mA) MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 — 60 100 140 140 250 250 5.0 15 27 140 130 140 — — — — — — — — — — — — — – 0.25 Vdc Collector–Emitter Saturation Voltage (IC = –10 mA, IE = –0.3 mA) (IC = –10 mA, IB = – 5 mA) MUN5130DW1T1/MUN5131DW1T1 (IC = –10 mA, IB = –1 mA) MUN5115DW1T1/MUN5116DW1T1/ MUN5132DW1T1/MUN5133DW1T1/MUN5134DW1T1 Output Voltage (on) (VCC = –5.0 V, VB = –2.5 V, RL = 1.0 kΩ) MUN5111DW1T1 MUN5112DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 (VCC = –5.0 V, VB = – 3.5 V, RL = 1.0 kΩ) MUN5113DW1T1 3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% VCE(sat) VOL — — — — — — — — — — — — — — — — — — — — — — — — –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 –0.2 Vdc 2 Motorola Small–Signal Transistors, FETs and Diodes Device Data MUN5111DW1T1 SERIES ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, common for Q1 and Q2) (Continued) Characteristic Output Voltage (off) (VCC = –5.0 V, VB = –0.5 V, RL = 1.0 kΩ) (VCC = –5.0 V, VB = –0.050 V, RL = 1.0 kΩ) MUN5130DW1T1 (VCC = –5.0 V, VB = – 0.25 V, RL = 1.0 kΩ) MUN5115DW1T1 MUN5116DW1T1 MUN5131DW1T1 MUN5132DW1T1 Input Resistor MUN5111DW1T1 MUN5112DW1T1 MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1 MUN5116DW1T1 MUN5130DW1T1 MUN5131DW1T1 MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 Symbol VOH Min – 4.9 Typ — Max — Unit Vdc R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 0.8 0.17 — 0.8 0.055 0.38 0.038 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 1.0 0.21 — 1.0 0.1 0.47 0.047 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 1.2 0.25 — 1.2 0.185 0.56 0.056 kΩ Resistor Ratio MUN5111DW1T1/MUN5112DW1T1/MUN5113DW1T1 MUN5114DW1T1 MUN5115DW1T1/MUN5116DW1T1 MUN5130DW1T1/MUN5131DW1T1/MUN5132DW1T1 MUN5133DW1T1 MUN5134DW1T1 MUN5135DW1T1 R1/R2 250 PD , POWER DISSIPATION (MILLIWATTS) 200 150 100 RθJA = 833°C/W 50 0 – 50 0 50 100 TA, AMBIENT TEMPERATURE (°C) 150 Figure 1. Derating Curve Motorola Small–Signal Transistors, FETs and Diodes Device Data 3 MUN5111DW1T1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — MUN5111DW1T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V TA = –25°C 0.1 75°C 25°C TA = 75°C 25°C 100 –25°C 0.01 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz lE = 0 V TA = 25°C 100 75°C 25°C TA = –25°C IC, COLLECTOR CURRENT (mA) Cob , CAPACITANCE (pF) 3 10 1 2 0.1 1 0.01 0.001 0 1 2 VO = 5 V 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 10 TA = –25°C 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current 4 Motorola Small–Signal Transistors, FETs and Diodes Device Data MUN5111DW1T1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — MUN5112DW1T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) 1000 VCE = 10 V 1 TA = –25°C 25°C TA = 75°C 100 25°C –25°C 75°C 0.1 0.01 10 0 20 IC, COLLECTOR CURRENT (mA) 40 50 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 100 75°C 10 25°C TA = –25°C Cob , CAPACITANCE (pF) 3 1 2 0.1 1 0.01 0.001 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 VO = 5 V 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = –25°C 10 75°C 25°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current Motorola Small–Signal Transistors, FETs and Diodes Device Data 5 MUN5111DW1T1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — MUN5113DW1T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) TA = 75°C 25°C 100 –25°C TA = –25°C 75°C 0.1 25°C 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C 25°C –25°C IC, COLLECTOR CURRENT (mA) 0.8 Cob , CAPACITANCE (pF) 10 1 0.6 0.4 0.1 0.2 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = –25°C 10 25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 16. Input Voltage versus Output Current 6 Motorola Small–Signal Transistors, FETs and Diodes Device Data MUN5111DW1T1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — MUN5114DW1T1 VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) TA = –25°C 25°C 75°C 180 160 140 120 100 80 60 40 20 0 1 2 4 6 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 80 90 100 VCE = 10 V TA = 75°C 25°C –25°C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4.5 4 Cob , CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 50 f = 1 MHz lE = 0 V TA = 25°C 100 TA = 75°C IC, COLLECTOR CURRENT (mA) 25°C –25°C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) 25°C TA = –25°C 75°C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current Motorola Small–Signal Transistors, FETs and Diodes Device Data 7 MUN5111DW1T1 SERIES TYPICAL ELECTRICAL CHARACTERISTICS — MUN5115DW1T1 1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25°C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. DC Current Gain TYPICAL ELECTRICAL CHARACTERISTICS — MUN5116DW1T1 1000 HFE, DC CURRENT GAIN (NORMALIZED) TA = 25°C VCE = 10 V VCE = 5.0 V 100 1.0 10 IC, COLLECTOR CURRENT (mA) 100 Figure 23. DC Current Gain 8 Motorola Small–Signal Transistors, FETs and Diodes Device Data MUN5111DW1T1 SERIES INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. SOT–363 0.5 mm (min) 1.9 mm SOT–363 POWER DISSIPATION The power dissipation of the SOT–363 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C – 25°C = 150 milliwatts 833°C/W The 833°C/W for the SOT–363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad™. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10°C. • The soldering temperature and time should not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient should be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ 0.4 mm (min) SOLDERING PRECAUTIONS 0.65 mm 0.65 mm 9 MUN5111DW1T1 SERIES SOLDER STENCIL GUIDELINES Prior to placing surface mount components onto a printed circuit board, solder paste must be applied to the pads. A solder stencil is required to screen the optimum amount of solder paste onto the footprint. The stencil is made of brass or stainless steel with a typical thickness of 0.008 inches. The stencil opening size for the surface mounted package should be the same as the pad size on the printed circuit board, i.e., a 1:1 registration. TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones, and a figure for belt speed. Taken together, these control settings make up a heating “profile” for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 23 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177 –189°C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints. STEP 1 PREHEAT ZONE 1 “RAMP” 200°C STEP 2 STEP 3 VENT HEATING “SOAK” ZONES 2 & 5 “RAMP” STEP 5 STEP 4 HEATING HEATING ZONES 3 & 6 ZONES 4 & 7 “SPIKE” “SOAK” 170°C 160°C STEP 6 STEP 7 VENT COOLING 205° TO 219°C PEAK AT SOLDER JOINT DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150°C 150°C 100°C 100°C 140°C SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY) 50°C DESIRED CURVE FOR LOW MASS ASSEMBLIES TIME (3 TO 7 MINUTES TOTAL) TMAX Figure 24. Typical Solder Heating Profile 10 Motorola Small–Signal Transistors, FETs and Diodes Device Data MUN5111DW1T1 SERIES PACKAGE DIMENSIONS A G V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K N S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC ––– 0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC ––– 0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 6 5 4 S 1 2 3 –B– D 6 PL 0.2 (0.008) N M B M J C STYLE 1: PIN 1. 2. 3. 4. 5. 6. EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 H K CASE 419B–01 ISSUE C Motorola Small–Signal Transistors, FETs and Diodes Device Data 11 MUN5111DW1T1 SERIES Motorola reserves the right to make changes without further notice to any products herein. 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