MP111DS-LF-Z

MP111 Dying Gasp Storage and Release Control IC The Future of Analog IC Technology DESCRIPTION FEATURES The MP111 is a dying gasp storage and release controller. It charges storage capacitor from the input during normal operation. Once the storage capacitor is charged to the selected voltage, the charge is stopped, and the storage capacitor is separated from the input. The charging circuit maintains the storage voltage after the charge is completed.    The MP111 keeps monitoring the input voltage, and releases the charge from storage capacitor to input capacitor when the input voltage is lower than the selected release voltage. It regulates the input voltage to keep it close to release voltage for as long as possible. APPLICATIONS       Wide 4.5V to 18V Input Operating Range 2.5A dumping current from Storage to VIN Built-in 250mA Current Limit for Charging Storage Capacitor User Programmable Storage and Release Voltage Dying Gasp FLAG Indicator Available in SOIC-8 package Cable/DSL/PON Modems Home Gateway Access Point Networks All MPS parts are lead-free, halogen free, and adhere to the RoHS directive. For MPS green status, please visit MPS website under Quality Assurance. “MPS” and “The Future of Analog IC Technology” are Registered Trademarks of Monolithic Power Systems, Inc. The MP111 has built-in current limit circuit during the charging up of the storage capacitors. The storage and release voltage can be programmed to user’s desired value by external resistors. The MP111 comes in an SOIC-8 package and requires a minimum number of readily available standard external components. TYPICAL APPLICATION C3 2.2nF VIN 4.5V to 18V C1 22 C2 15pF R3 464k 3 BST MP111 STRG 6 4 C4 22nF VMAX FB2 R4 49.9k Open Drain Output 8 2 VIN 1 VSTRG 23V R1 845k FB1 Connect to SW 7 GASP GND R5 10 5 R2 37.4k C5 2000 VSTORAGE 5V/div. VIN 5V/div. GASP 10V/div. IRELEASE 1A/div. MP111 Rev. 1.0 1 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 1 MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC ORDERING INFORMATION Part Number* MP111DS Package SOIC-8 Top Marking See Below * For Tape & Reel, add suffix –Z (eg.MP111DS–Z); For RoHS, compliant packaging, add suffix –LF (eg. MP111DS–LF–Z). TOP MARKING MP111: part number LLLLLLLL: lot number MPS; MPS prefix Y: year code WW: week code PACKAGE REFERENCE TOP VIEW BST 1 8 VMAX VIN 2 7 STRG FB2 3 6 GASP GND 4 5 FB1 SOIC-8 MP111 Rev. 1.0 1 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 2 MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC ABSOLUTE MAXIMUM RATINGS (1) Thermal Resistance (4) VIN ................................................... -0.3V to 22V VBST.................................................. -0.3V to 40V VBST-VIN………………………………-0.3V to 25V VMAX ................................................. -0.3V to 42V VMAX-VIN………………………….......-0.3V to 25V VSTRG................................................ -0.3V to 32V VSTRG-VIN……………………………..-0.3V to 25V VPG, VGASP ........................................ -0.3V to 22V All Other Pins ................................. -0.3V to 6.5V Junction Temperature ............................... 150C Lead Temperature .................................... 260C Continuous Power Dissipation (TA = +25°C) (2) ............................................................... 1.2W Junction Temperature ............................... 150C SOIC-8 .................................... 90 ....... 45 ... C/W θJA θJC Notes: 1) Exceeding these ratings may damage the device. 2) The maximum allowable power dissipation is a function of the maximum junction temperature TJ (MAX), the junction-toambient thermal resistance θJA, and the ambient temperature TA. The maximum allowable continuous power dissipation at any ambient temperature is calculated by PD (MAX) = (TJ (MAX)-TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die temperature, and the regulator will go into thermal shutdown. Internal thermal shutdown circuitry protects the device from permanent damage. 3) The device is not guaranteed to function outside of its operating conditions. 4) Measured on JESD51-7, 4-layer PCB. Recommended Operating Conditions (3) Supply Voltage VIN ........................... 4.5V to 18V Storage Voltage VSTRG ......................................... ................................Vin to 2×VIN-0.8V(32V max) Operating Junction Temp. (TJ). -40°C to +125°C MP111 Rev. 1.0 1 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 3 MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC ELECTRICAL CHARACTERISTICS VIN = 12V, TA = 25C, unless otherwise noted. Parameter Symbol Input Supply Voltage Range VIN Supply Current (Shutdown) IIN Supply Current (Quiescent) IIN VIN Under Voltage Lockout Threshold Rising VIN Under Voltage Lockout Threshold Hysteresis Feedback Voltage Vstorage Refresh Threshold-High Vstorage Refresh Threshold-Low Vstorage Refresh Threshold-Hysteresis Feedback Current GASP High Threshold GASP Low Threshold IFB VTHGASP VTLGASP GASP Delay GASPTd Condition Min Max 4.5 VEN = 0V VEN = 2V, VFB = 1.1V INUVVth 3.0 INUVHYS 18 0.95 VFB1_H 300 μA 3.5 4.0 1 V mV 1.05 VFB-0.05 VFB-0.025 VFB1_Hys V μA VFB+0.025 VFB+0.05 VFB1_L Units 1 350 VFB GASP Sink Current VGASP Capability GASP Leakage Current IGASP_LEAK Input Inrush Current Limit for Charging Storage IPRECHARGE_LIMIT Capacitor Current limit for Dumping Charge from CSTORAGE to IDUMP_LIMIT VIN Thermal Shutdown (5) TSD Thermal Shutdown THYS Hysteresis (5) Typ V V V 50 mV 10 1.05 1 nA VFB2 VFB2 2 μs Sink 4mA 0.4 V VGASP=3.3V 10 nA 0.25 A 2.5 A 150 ºC 30 ºC VFB1= VFB2=1V VIN=12V, Charging CSTORAGE from 0 to VIN Notes: 5) Guaranteed by design. MP111 Rev. 1.0 1 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 4 MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC TYPICAL PERFORMANCE CHARACTERISTICS VIN = 12V, VSTORAGE = 23V, VRELEASE=10.2V, For DCDC Converter: POUT=5W, VOUT=3.3V, TA = +25ºC, unless otherwise noted. Release Time vs. Storage Capacitance Thermal Performance 12 P=1W 250 10 200 150 P=3W 100 50 P=5W 0 0 500 1000 1500 2000 2500 POWER LOSS (W) RELEASE TIME (ms) 300 8 6 4 2 0 0.0001 0.001 0.01 0.1 1 10 MAXIMUM HOLD UP TIME (s) MP111 Rev. 1.0 1 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 5 MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC TYPICAL PERFORMANCE CHARACTERISTICS (continued) VIN = 12V, VSTORAGE = 23V, VRELEASE=10.2V, CSTOREGE=1000μF, For DCDC Converter: POUT=5W, VOUT=3.3V, TA = +25ºC, unless otherwise noted. VSTORAGE Charge Up VSTORAGE 5V/div. VIN 5V/div. GASP 10V/div. IRELEASE 500mA/div. VSTORAGE Refresh VSTORAGE 5V/div. VIN 5V/div. GASP 10V/div. IRELEASE 1A/div. VSTORAGE Release VSTORAGE 5V/div. VIN 5V/div. GASP 10V/div. IRELEASE 1A/div. Release Time vs. Power Release Time vs. Power Release Time vs. Power POUT = 5W POUT = 3W POUT = 1W VSTORAGE 5V/div. VIN 5V/div. GASP 10V/div. IRELEASE 1A/div. VSTORAGE 5V/div. VIN 5V/div. GASP 10V/div. VSTORAGE 5V/div. VIN 5V/div. GASP 10V/div. IRELEASE 1A/div. IRELEASE 1A/div. VSTORAGE 5V/div. VIN 5V/div. GASP 10V/div. VSTORAGE 5V/div. VIN 5V/div. GASP 10V/div. IRELEASE 1A/div. VSTORAGE 5V/div. VIN 5V/div. GASP 10V/div. IRELEASE 1A/div. IRELEASE 1A/div. MP111 Rev. 1.0 1 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 6 MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC PIN FUNCTIONS SOIC-8 Pin # Name 1 BST 2 VIN 3 FB2 4 GND 5 6 7 8 FB1 GASP STRG VMAX MP111 Rev. 1.0 1 3/4/2020 Description Bootstrap. A capacitor and a resistor in series connected between this pin and DC/DC converter’s SW node is required to charge storage capacitor. Supply Voltage. The MP111 operates from a +4.5V to +18V input rail. Input decoupling capacitor is needed to decouple the input rail. Feedback to set release voltage. System Ground. This pin is the reference ground of the regulated output voltage. For this reason care must be taken in PCB layout. Suggested to be connected to GND with copper and vias. Feedback to set storage voltage. Open drain output to indicate dying gasp operation is active. Connect to storage capacitor for dying gasp storage and release operation. Internal Supply. A 2.2nF ceramic capacitor is required for decoupling. www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 7 MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC BLOCK DIAGRAM VMAX VSTORAGE BST Boost/Charge/ Release Circuitry VIN FB2 Logic Control FB1 GASP GND Figure 1 – Functional Block Diagram MP111 Rev. 1.0 1 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 8 MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC OPERATION MP111 is a dying gasp storage and release control IC. It charges the storage capacitors from input supply during power start up and keeps refreshing the storage voltage at a regulated value during normal operation. MP111 continuously monitors the input voltage. Once the input voltage is lower than the programmed release voltage in case of losing input power, it releases the charge from the storage capacitors to input, and keeps the input voltage regulated to the release voltage for as long as possible. It allows the system to respond to input power failure. Start-Up Release MP111 keeps monitoring the input voltage. Once the input voltage is lower than selected release voltage in case of losing input power, MP111 moves the charge from high voltage storage capacitor to low input voltage capacitor. The release voltage can be determined by choosing appropriate input resistance divider. The maximum LDO release current can be as high as 2.5A. Until the storage capacitor voltage is near the input voltage, the input voltage loses its regulation and reduces further. A conceptual release process of MP111 is shown in Figure 3. Vstorage During the power start-up, there are two periods to charge the storage capacitors. In the first period, the MP111 pre-charges the large storage capacitors from 0 to nearly VIN with built-in inrush current limit. Once the storage voltage is close to the input voltage, the storage voltage is boosted and regulated at target voltage. The BST pin of MP111 should connect to the DCDC switch node. Only after the DCDC is enabled, the MP111 will start boosting. Figure 2 shows the charging build-up process of MP111. VIN Vrelease Input UVLO of DC/DC converter GASP t Figure 3 – Timing of Releasing Gasp Indicator When the FB2 voltage, feedback voltage for the input power, is higher than 1.05XVFB2, the GASP pin will be pulled high. Connect a resistor across VIN and GASP can drive GASP high. When the FB voltage is lower than 1.00XVFB2, the GASP voltage will be internally pulled low. GASP voltage can be used as communication indicator signal which states input power availability. Figure 2 – Timing of Charging MP111 Rev. 1.0 1 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 9 MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC APPLICATION INFORMATION SET STORAGE VOLTAGE The storage voltage can be set by choosing appropriate external feedback resistors R1 and R2 which is shown in Figure 4. Figure 5 – Release Feedback Circuit Similarly, the release voltage is set by: VRELEASE  (1  Figure 4 – Feedback Circuit for Storage Voltage The storage voltage is determined by: VSTORAGE  (1  R1 )  VFB1 R2 Here is the example, if the storage voltage is set to be 20V, choose R2 to be 40kΩ, R1 will be then given by: R1  40k  (20  VFB2 )  760k VFB2 Table 1 lists the recommended resistors for different storage voltages. Table 1 – Resistor Selection for Different Storage Voltages VSTORAGE (V) 15 19 23 R1 (kΩ) 750 750 850 R2 (kΩ) 53.2 41.6 37.4 Select Release Voltage and Input Capacitors The release voltage can be set by choosing external feedback resistors R3 and R4 which is shown in Figure 5. R3 )  VFB2 R4 However, the selection of R3 and R4 not only determines the release voltage, but impacts the stability. Generally, choosing R3 to be 300~500kΩ is recommended for a stable performance with 47μF Cin. Table 2 lists the recommended resistors setup for different release voltages. Table 2 – Resistor Selection for Different Release Voltages VRELEASE (V) 11 10.2 9.0 R1 (kΩ) 475 464 324 R2 (kΩ) 47.5 49.9 40.2 Cf (pF) 15 15 15 Cin (μF) 47 47 47 Select Storage Capacitor The Storage Capacitor is for energy storage during normal operation and the energy will be released to VIN in case of losing input power. Typically, a general purpose electrolytic capacitor is recommended. The voltage rating of storage capacitor needs to be higher than the targeted storage voltage. The voltage rating of storage capacitor can be fully utilized since the voltage on storage capacitor is very stable during normal operation. There will be less ripple current/voltage for most of the time during normal operation. The ripple current rating of storage cap can be less consideration. The needed capacitance is dependent on how long the dying gasp time based on typically MP111 Rev. 1.0 1 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 10 MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC application. Assume the input release current is IRELEASE when input voltage is regulated at VRELEASE for the DCDC converter. The storage voltage of MP111 is VSTORAGE, and the required dying gasp time is TDASP. The necessary storage capacitance can be calculated as following equation: Cs  IRELEASE  TDASP VSTORAGE  VRELEASE TD=20ms, VSTORAGE=20V, If IRELEASE=1A, VRELEASE=10V, the needed storage capacitance is 2000μF. Generally, the storage capacitance should be chosen a little bit large to avoid capacitance reduction at high voltage offset. In typical xDSL applications using a 12V input supply, it is recommended to set the storage voltage higher than 20V to fully utilize the high voltage energy and minimize storage capacitance requirements. Generally, a 25V rated electrolytic capacitor can be used. The lifetime of electrolytic capacitors can be severely impacted by both environmental and electrical factors. One of the most critical electrical factors is the AC RMS ripple current through the capacitor which leads to increased capacitor core temperatures. Normally, for typical industrial uses, it is recommended to derate the capacitor voltage rating by as much as 70%-80%. For example, a 25V rated electrolytic capacitor would be used for a 16V to 20V application. However, since the MP111 tightly regulates the storage voltage, the storage capacitor almost has no AC ripple current going through it. The resulting refresh rate of the MP111 is very low which allows customers to safely use a 90% capacitor derating (6). For example, a 25V electrolytic capacitor, can safely handle a storage voltage of up to 22V. Table 3 is some recommended storage electrolytic capacitors which can be used in typical xDSL application PCB Layout Guide PCB layout is very important to achieve stable operation. Please follow these guidelines and take the EVB board layout for references. 1) Connect the BST pin as close as possible to the SW node of DCDC converter through a resistor and a small ceramic capacitor. Try to avoid interconnect the feedback path. 2) Ensure all feedback connections are short and direct. Place the feedback resistors and compensation components as close to the chip as possible. 3) Keep the connection of the storage capacitors and STRG pin as short and wide as possible. Table 3 – Recommended Storage Capacitors Part # 25ME1500WX PEH526HAB4270M3 EEUFR1E152B Vender Sanyo Kemet Panasonic Capacitance 1500μF 2700μF 1500μF Voltage 25V 25V 25V Operating Temp -40 to +105C -40 to +105C -40 to +105C Notes: 6) “Applying voltage does not affect the life time because the self heating by applying voltage can be ignored”, from Sanyo. MP111 Rev. 1.0 1 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 11 MP111 – DYING GASP STORAGE AND RELEASE CONTROL IC TYPICAL APPLICATION CIRCUITS VIN 4.5V to 18V C3 2.2nF C2 15pF C1 22 R3 464 k VMAX STRG VIN FB2 R5 10k MP111 R4 49.9k R1 845k C5 2000 FB1 R2 37.4k GASP GND VSTRG 23V C4 22nF R5 10 BST SW VIN MPS DC/DC converter VOUT Figure 6 – MP111 Application Circuit MP111 Rev. 1.0 1 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 12 MP200 – DYING GASP STORAGE AND RELEASE CONTROL IC PACKAGE INFORMATION SOIC-8 0.189(4.80) 0.197(5.00) 8 0.050(1.27) 0.024(0.61) 5 0.063(1.60) 0.150(3.80) 0.157(4.00) PIN 1 ID 1 0.228(5.80) 0.244(6.20) 0.213(5.40) 4 TOP VIEW RECOMMENDED LAND PATTERN 0.053(1.35) 0.069(1.75) SEATING PLANE 0.004(0.10) 0.010(0.25) 0.013(0.33) 0.020(0.51) 0.0075(0.19) 0.0098(0.25) SEE DETAIL "A" 0.050(1.27) BSC SIDE VIEW FRONT VIEW 0.010(0.25) x 45o 0.020(0.50) GAUGE PLANE 0.010(0.25) BSC 0o-8o 0.016(0.41) 0.050(1.27) DETAIL "A" NOTE: 1) CONTROL DIMENSION IS IN INCHES. DIMENSION IN BRACKET IS IN MILLIMETERS. 2) PACKAGE LENGTH DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 3) PACKAGE WIDTH DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSIONS. 4) LEAD COPLANARITY (BOTTOM OF LEADS AFTER FORMING) SHALL BE 0.004" INCHES MAX. 5) DRAWING CONFORMS TO JEDEC MS-012, VARIATION AA. 6) DRAWING IS NOT TO SCALE. NOTICE: The information in this document is subject to change without notice. Users should warrant and guarantee that third party Intellectual Property rights are not infringed upon when integrating MPS products into any application. MPS will not assume any legal responsibility for any said applications. MP111 Rev. 1.01 3/4/2020 www.MonolithicPower.com MPS Proprietary Information. Patent Protected. Unauthorized Photocopy and Duplication Prohibited. © 2020 MPS. All Rights Reserved. 13