2SC3646S-TD-E

Ordering number : EN2005C 2SA1416/2SC3646 Bipolar Transistor http://onsemi.com (–)100V, (–)1A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s • • • • Specifications ( ) : 2SA1416 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO (--)120 V (--)100 V (--)6 V Collector Current VEBO IC (--)1 A Collector Current (Pulse) ICP Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg When mounted on ceramic substrate (250mm2×0.8mm) (--)2 A 500 mW 1.3 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7007B-004 • Package : PCP • JEITA, JEDEC : SC-62, SOT-89, TO-243 • Minimum Packing Quantity : 1,000 pcs./reel Top View 4.5 1.6 2.5 1.0 Packing Type: TD 4.0 1.5 2SA1416S-TD-E 2SA1416T-TD-E 2SC3646S-TD-E 2SC3646T-TD-E TD 0.4 0.4 0.5 Marking AB 1.5 3.0 RANK RANK 2SA1416 0.75 LOT No. 3 CB 2 LOT No. 1 2SC3646 Electrical Connection 2 1 : Base 2 : Collector 3 : Emitter Bottom View 1 PCP 1 3 2SA1416 Semiconductor Components Industries, LLC, 2013 September, 2013 2 3 2SC3646 82212 TKIM/31010EA TKIM/O3103TN (KT)/71598HA (KT)/3277KI/N255MW, TS No.2005-1/7 2SA1416 / 2SC3646 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions Ratings min typ max Unit ICBO IEBO VCB=(--)100V, IE=0A VEB=(--)4V, IC=0A VCE=(--)5V, IC=(--)100mA Gain-Bandwidth Product hFE fT VCE=(--)10V, IC=(--)100mA 120 Output Capacitance Cob (13)8.5 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=(--)10V, f=1MHz IC=(--)400mA, IB=(--)40mA (--0.2)0.1 (--0.6)0.4 V IC=(--)400mA, IB=(--)40mA (--)0.85 (--)1.2 V Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time 100* (--)100 nA (--)100 nA 400* MHz pF V(BR)CBO V(BR)CEO IC=(--)10μA, IE=0A (--)120 V IC=(--)1mA, RBE=∞ (--)100 V V(BR)EBO ton IE=(--)10μA, IC=0A tstg tf See specified Test Circuit. (--)6 V (80)80 ns (700)850 ns (40)50 ns * : The 2SA1416 / 2SC3646 are classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% IB2 INPUT RB RL VR 50Ω + 100μF + 470μF --5V 50V IC=10IB1=--10IB2=400mA (For PNP, the polarity is reversed) Ordering Information Package Shipping 2SA1416S-TD-E Device PCP 1,000pcs./reel 2SA1416T-TD-E PCP 1,000pcs./reel 2SC3646S-TD-E PCP 1,000pcs./reel 2SC3646T-TD-E PCP 1,000pcs./reel memo Pb Free No.2005-2/7 2SA1416 / 2SC3646 IC -- VCE --1.0 mA mA --10m 5 --2 --0.8 mA 0 --2 --5mA --0.6 --3mA --0.4 --2mA --1mA --0.2 --1 --2 --3 --4 10mA 5mA 0.6 3mA 2mA 0.4 1mA IB=0mA 0 mA --300 --1.0mA --200 --0.5mA --100 IB=0mA --10 --20 --30 --40 Collector-to-Emitter Voltage, VCE -- V 0.5mA 100 10 20 30 40 50 ITR03529 IC -- VBE 2SC3646 VCE=5V --0.4 0.8 0.6 Ta=7 5°C 25°C --25°C Collector Current, IC -- A 1.0 --0.6 0.4 0.2 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 Base-to-Emitter Voltage, VBE -- V ITR03530 hFE -- IC 1000 5 DC Current Gain, hFE 25°C --25°C 7 5 7 2 3 5 --0.1 Collector Current, IC -- A 7 --1.0 2 3 ITR03532 1.2 ITR03531 Ta=75°C 25°C --25°C 7 5 2 5 1.0 2SC3646 VCE=5V 100 3 3 0.8 2 2 2 0.6 hFE -- IC 3 3 7 --0.01 0.4 Base-to-Emitter Voltage, VBE -- V 5 2 100 0.2 7 Ta=75° C 3 0 1000 2SA1416 VCE=--5V 7 10 IB=0mA 0 2SA1416 VCE=--5V Ta=7 5°C 25°C --25°C Collector Current, IC -- A 1.0mA 200 Collector-to-Emitter Voltage, VCE -- V --0.2 DC Current Gain, hFE 300 ITR03528 --0.8 0 2SC3646 1.5mA 1.2 --1.0 ITR03527 400 0 --50 IC -- VBE --1.2 5 2.0mA 2.5 Collector Current, IC -- mA Collector Current, IC -- mA --1.5mA 4 IC -- VCE A --2.0m 3 Collector-to-Emitter Voltage, VCE -- V 2SA1416 mA 0 0 2 500 --2.5 --400 1 ITR03526 IC -- VCE --500 20mA 15mA 0.8 0 --5 Collector-to-Emitter Voltage, VCE -- V A 25m A 30m 0.2 IB=0mA 0 0 2SC3646 A --15 0 --3 IC -- VCE 1.0 mA Collector Current, IC -- A Collector Current, IC -- A 2SA1416 10 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR03533 No.2005-3/7 2SA1416 / 2SC3646 f T -- IC 2 2SA1416 / 2SC3646 f=1MHz 7 2SA1416 100 7 2SC3646 5 Cob -- VCB 100 2SA1416 / 2SC3646 VCE=10V 5 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 3 3 2 3 2 2SA 141 2SC 364 7 3 10 7 0.01 2 3 5 7 2 0.1 3 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 --100 7 Ta= 5 --25°C 25°C 3 2 7 2 --0.01 3 5 7 2 3 --0.1 Collector Current, IC -- A 5 7 --1.0 Ta=--25°C 7 3 7 2 --0.01 3 5 75°C 7 2 3 --0.1 Collector Current, IC -- A 5 7 --1.0 10 DC s op era tio n 0.1 7 5 For PNP, minus sign is omitted 2SA1416 / 2SC3646 Single pulse Ta=25°C Mounted on a ceramic board (250mm2✕0.8mm) 7 1.0 --25°C 25°C 3 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 ITR03537 VBE(sat) -- IC 2SC3646 IC / IB=10 5 3 2 Ta=--25°C 1.0 7 25°C 5 7 0.01 2 3 75°C 5 7 0.1 2 3 5 7 2 1.0 ITR03535 Collector Current, IC -- A Collector Dissipation, PC -- W 0m 5 Ta=75°C 5 PC -- Ta 1.4 1m ms s 10 3 2 0.01 7 5 7 2SA1416 / 2SC3646 IC=1A 2 100 1.6 ICP=2A 3 2 ITR03534 ASO 1.0 7 5 7 100 2 ITR03539 3 3 2 5 3 2 5 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 25°C 3 7 3 5 2 10 5 10 5 --1.0 7 2SC3646 IC / IB=10 2 2 2SA1416 IC / IB=10 7 5 VCE(sat) -- IC ITR03536 VBE(sat) -- IC --10 3 7 5 C 75° 2 1000 2SA1416 IC / IB=10 7 7 1.0 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV For PNP, minus sign is omitted 2 7 1.0 ITR03538 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V 6 5 For PNP, minus sign is omitted Collector Current, IC -- A 6 10 2 3 5 7 10 2 3 5 Collector-to-Emitter Voltage, VCE -- 1.3 M ou 1.2 nt ed 1.0 on ac er am ic 0.8 bo ar No h 0.5 d( 25 0.6 0.4 0m m2 ✕ eat s ink 0.8 m 7 100 2 V ITR03540 0 m ) 0.2 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR03541 No.2005-4/7 2SA1416 / 2SC3646 Bag Packing Specification 2SA1416S-TD-E, 2SA1416T-TD-E, 2SC3646S-TD-E, 2SC3646T-TD-E No.2005-5/7 2SA1416 / 2SC3646 Outline Drawing Land Pattern Example 2SA1416S-TD-E, 2SA1416T-TD-E, 2SC3646S-TD-E, 2SC3646T-TD-E Mass (g) Unit 0.058 mm * For reference Unit: mm 0.9 2.2 3.7 45° 45° 1.0 1.8 1.5 1.0 1.5 3.0 No.2005-6/7 2SA1416 / 2SC3646 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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