5LN01M-TL-H

Ordering number : EN6137C 5LN01M N-Channel Small Signal MOSFET http://onsemi.com 50V, 0.1A, 7.8Ω, Single MCP Features • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings VDSS VGSS Gate to Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Unit 50 V 0.1 A 0.4 A 0.15 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Allowable Power Dissipation PW≤10μs, duty cycle≤1% V ±10 This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Ordering & Package Information Package Dimensions 0.15 3 5LN01M-TL-E 5LN01M-TL-H 1.25 0 to 0.08 1 Device Package Shipping memo 5LN01M-TL-E MCP SC-70, SOT-323 3,000pcs./reel Pb-Free 5LN01M-TL-H MCP SC-70, SOT-323 3,000pcs./reel Pb-Free and Halogen Free Packing Type: TL 0.9 Marking 2 0.65 LOT No. YB 0.3 LOT No. TL 0.3 0.425 2.1 0.425 2.0 0.2 unit : mm (typ) 7023A-010 1 : Gate 2 : Source 3 : Drain Electrical Connection 3 MCP 1 2 Semiconductor Components Industries, LLC, 2013 July, 2013 71713 TKIM TC-00002956/71112 TKIM/31506PE MSIM TB-00002111/ No.6137-1/6 31000 TS (KOTO) TA-2048 5LN01M Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage V(BR)DSS IDSS IGSS VGS(off) | yfs | Forward Transfer Admittance Static Drain to Source On-State Resistance Input Capacitance Conditions ID=1mA, VGS=0V VDS=50V, VGS=0V Ratings min typ Unit max 50 VGS=±8V, VDS=0V VDS=10V, ID=100μA 0.4 VDS=10V, ID=50mA 0.13 V 1 μA ±10 μA 1.3 0.18 V S RDS(on)1 ID=50mA, VGS=4V 6 7.8 Ω RDS(on)2 ID=30mA, VGS=2.5V 7.1 9.9 Ω RDS(on)3 ID=10mA, VGS=1.5V 10 20 Ciss Ω 6.6 pF Output Capacitance Coss 4.7 pF Reverse Transfer Capacitance Crss 1.7 pF Turn-ON Delay Time td(on) tr 18 ns 42 ns 190 ns Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=10V, ID=100mA 105 ns 1.57 nC 0.20 nC 0.32 IS=100mA, VGS=0V 0.85 nC 1.2 V Switching Time Test Circuit 4V 0V VDD=25V VIN ID=50mA RL=500Ω VOUT VIN PW=10μs D.C.≤1% D G 5LN01M P.G 50Ω S No.6137-2/6 5LN01M ID -- VDS 5V V 2.0 2. 0.05 0.04 0.03 0.14 C 25° 75° C 6.0 V VGS=1.5V 0.12 0.10 0.08 0.06 0.02 0.04 0.01 0.02 0 0 0 0.2 0.4 0.6 0.8 1.0 Drain to Source Voltage, VDS -- V 0 10 9 50mA ID=30mA 7 6 5 4 1.5 2.0 2.5 3.0 IT00055 RDS(on) -- ID 100 VGS=4V 7 Static Drain to Source On-State Resistance, RDS(on) -- Ω 11 1.0 Gate to Source Voltage, VGS -- V Ta=25°C 8 0.5 IT00054 RDS(on) -- VGS 12 Static Drain to Source On-State Resistance, RDS(on) -- Ω Ta=-25° C 0.16 0.07 0.06 VDS=10V 0.18 Drain Current, ID -- A 4.0V 0.08 Drain Current, ID -- A 3 .0 3.5V 0.09 ID -- VGS 0.20 V 0.10 5 3 2 10 Ta=75°C 25°C --25°C 7 5 3 2 3 1.0 0.01 2 1 2 3 4 5 6 7 8 9 Gate to Source Voltage, VGS -- V Static Drain to Source On-State Resistance, RDS(on) -- Ω 5 3 2 Ta=75°C 10 7 5 25°C --25°C 3 2 1.0 0.01 2 3 5 7 2 0.1 3 5 Drain Current, ID -- A =3 ID 0V A, m 50 I D= 6 =4. V GS 4 2 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT00060 5 7 1.0 IT00057 3 2 Ta=75°C 25°C 10 7 --25°C 5 3 2 2 3 5 7 2 0.01 3 5 Drain Current, ID -- A Forward Transfer Admittance, | yfs | -- S A 0m 8 3 VGS=1.5V | yfs | -- ID 1.0 .5V 2 0.1 5 1.0 0.001 1.0 IT00058 2 S= , VG 10 7 7 7 12 5 RDS(on) -- ID 100 RDS(on) -- Ta 14 3 Drain Current, ID -- A VGS=2.5V 7 2 IT00056 RDS(on) -- ID 100 Static Drain to Source On-State Resistance, RDS(on) -- Ω 10 Static Drain to Source On-State Resistance, RDS(on) -- Ω 0 7 0.1 IT00059 VDS=10V 7 5 3 C -25° Ta=75°C 2 25°C 0.1 7 5 3 2 0.01 0.01 2 3 5 7 0.1 2 Drain Current, ID -- A 3 5 7 1.0 IT00061 No.6137-3/6 5LN01M IS -- VSD 1.0 7 5° C 2 0.1 25 °C --25 °C 7 5 3 2 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V tf 100 7 3 2 10 Ciss Coss 3 2 Crss 5 10 15 20 25 30 2 3 5 7 0.1 IT00063 VGS -- Qg VDS=10V ID=100mA 8 7 6 5 4 3 2 1 1.0 0 td(on) 2 10 Gate to Source Voltage, VGS -- V 3 5 tr 5 9 7 td(off) 2 Drain Current, ID -- A f=1MHz 5 Ciss, Coss, Crss -- pF 3 IT00062 7 35 40 Drain to Source Voltage, VDS -- V 45 50 IT00064 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC 1.6 1.8 IT00065 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W 5 10 0.01 1.2 Ciss, Coss, Crss -- VDS 100 VDD=25V VGS=4V 7 Switching Time, SW Time -- ns 3 Ta =7 Source Current, IS -- A 5 SW Time -- ID 1000 VGS=0V 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT00066 No.6137-4/6 5LN01M Outline Drawing 5LN01M-TL-E, 5LN01M-TL-H Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No.6137-5/6 5LN01M Note on usage : Since the 5LN01M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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