BC817-25LT1G

BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors http://onsemi.com NPN Silicon COLLECTOR 3 Features • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE 2 EMITTER MAXIMUM RATINGS Rating 3 Symbol Value Unit Collector − Emitter Voltage VCEO 45 V Collector − Base Voltage VCBO 50 V Emitter − Base Voltage VEBO 5.0 V IC 500 mAdc SOT−23 CASE 318 STYLE 6 Symbol Max Unit MARKING DIAGRAM 225 1.8 mW mW/°C 556 °C/W Collector Current − Continuous 1 2 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR− 5 Board, (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA 6x M G G 1 Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature PD 300 2.4 mW mW/°C RqJA 417 °C/W TJ, Tstg −65 to +150 °C July, 2014 − Rev. 14 M G = Device Code x = A, B, or C = Date Code* = Pb−Free Package (Note: Microdot may be in either location) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR−5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina. © Semiconductor Components Industries, LLC, 2014 6x 1 *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: BC817−16LT1/D BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector −Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 45 − − V Collector −Emitter Breakdown Voltage (VEB = 0, IC = 10 mA) V(BR)CES 50 − − V Emitter −Base Breakdown Voltage (IE = 1.0 mA) V(BR)EBO 5.0 − − V Collector Cutoff Current (VCB = 20 V) (VCB = 20 V, TA = 150°C) ICBO − − − − 100 5.0 nA mA 100 160 250 40 − − − − 250 400 600 − Characteristic OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 1.0 V) hFE BC817−16, SBC817−16 BC817−25, SBC817−25 BC817−40, SBC817−40 (IC = 500 mA, VCE = 1.0 V) − Collector −Emitter Saturation Voltage (IC = 500 mA, IB = 50 mA) VCE(sat) − − 0.7 V Base −Emitter On Voltage (IC = 500 mA, VCE = 1.0 V) VBE(on) − − 1.2 V fT 100 − − MHz Cobo − 10 − pF SMALL− SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Device Specific Marking Package 6A SOT−23 (Pb−Free) Shipping† BC817−16LT1G 3000 / Tape & Reel NSVBC817−16LT1G BC817−16LT3G 10,000 / Tape & Reel SBC817−16LT3 BC817−25LT1G 3000 / Tape & Reel SBC817−25LT1G BC817−25LT3G SOT−23 (Pb−Free) 6B 10,000 / Tape & Reel SBC817−25LT3G BC817−40LT1G 3000 / Tape & Reel SBC817−40LT1G BC817−40LT3G SOT−23 (Pb−Free) 6C 10,000 / Tape & Reel SBC817−40LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L 300 1 hFE, DC CURRENT GAIN 200 VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 150°C 25°C −55°C 100 150°C 25°C −55°C 0.1 0.01 0 0.001 0.01 0.001 1 0.1 0.1 1 IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain vs. Collector Current Figure 2. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 0.01 IC, COLLECTOR CURRENT (A) 1.1 VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 −55°C IC/IB = 10 0.9 25°C 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 −55°C 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 3. Base Emitter Saturation Voltage vs. Collector Current Figure 4. Base Emitter Voltage vs. Collector Current http://onsemi.com 3 1 BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 +1 qVC for VCE(sat) 0 -1 qVB for VBE -2 100 1 Figure 5. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) Figure 6. Temperature Coefficients 100 C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L Cib 10 Cob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances http://onsemi.com 4 100 1000 BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L TYPICAL CHARACTERISTICS − BC817−25L, SBC817−25L 500 1 hFE, DC CURRENT GAIN 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) VCE = 1 V 400 300 25°C 200 −55°C 100 0 150°C 25°C 0.1 −55°C 0.01 0.001 0.01 1 0.1 0.001 0.1 1 IC, COLLECTOR CURRENT (A) Figure 8. DC Current Gain vs. Collector Current Figure 9. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 0.01 IC, COLLECTOR CURRENT (A) 1.1 −55°C IC/IB = 10 25°C 0.9 0.8 150°C 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 10. Base Emitter Saturation Voltage vs. Collector Current Figure 11. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VCE = 1 V TA = 25°C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 12. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 5 1000 1 BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 +1 qVC for VCE(sat) 0 -1 qVB for VBE -2 100 1 Figure 13. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) Figure 14. Temperature Coefficients 100 C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC817−25L, SBC81725L Cib 10 Cob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) Figure 15. Capacitances http://onsemi.com 6 100 1000 BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L 1 700 150°C VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 600 VCE = 1 V 500 25°C 400 300 −55°C 200 100 150°C 25°C 0.1 −55°C 0.01 0.001 0 0.001 0.01 0.001 1 0.1 0.1 1 IC, COLLECTOR CURRENT (A) Figure 16. DC Current Gain vs. Collector Current Figure 17. Collector Emitter Saturation Voltage vs. Collector Current VBE(on), BASE−EMITTER VOLTAGE (V) 1.0 0.01 IC, COLLECTOR CURRENT (A) 1.1 −55°C IC/IB = 10 0.9 0.8 25°C 0.7 0.6 150°C 0.5 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 1 1.2 VCE = 5 V 1.1 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.0001 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 18. Base Emitter Saturation Voltage vs. Collector Current Figure 19. Base Emitter Voltage vs. Collector Current 1000 fT, CURRENT−GAIN−BANDWIDTH PRODUCT (MHz) VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) IC/IB = 10 VCE = 1 V TA = 25°C 100 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 20. Current Gain Bandwidth Product vs. Collector Current http://onsemi.com 7 1000 1 BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L θV, TEMPERATURE COEFFICIENTS (mV/°C) 1.0 TJ = 25°C 0.8 0.6 0.4 IC = 10 mA 100 mA 300 mA 500 mA 0.2 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 +1 qVC for VCE(sat) 0 -1 qVB for VBE -2 100 1 Figure 21. Saturation Region 10 100 IC, COLLECTOR CURRENT (mA) Figure 22. Temperature Coefficients 100 C, CAPACITANCE (pF) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L Cib 10 Cob 1 0.1 10 1 VR, REVERSE VOLTAGE (VOLTS) Figure 23. Capacitances http://onsemi.com 8 100 1000 BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L 1 1 ms 10 ms 100 ms 1s Thermal Limit IC (A) 0.1 0.01 Single Pulse Test @ TA = 25°C 0.001 0.01 0.1 1 VCE (Vdc) 10 Figure 24. Safe Operating Area http://onsemi.com 9 100 BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, SBC817−40L PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 b 0.25 e q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. 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