BCP56T1G

BCP56 Series NPN Silicon Epitaxial Transistor These NPN Silicon Epitaxial transistors are designed for use in audio amplifier applications. The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. Features • High Current: 1.0 A • The SOT−223 package can be soldered using wave or reflow. The • • • • formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die Available in 12 mm Tape and Reel Use BCP56T1G to Order the 7 inch/1000 Unit Reel Use BCP56T3G to Order the 13 inch/4000 Unit Reel PNP Complement is BCP53T1G S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT COLLECTOR 2,4 BASE 1 EMITTER 3 4 12 MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Value Unit Collector−Emitter Voltage VCEO 80 Vdc Collector−Base Voltage VCBO 100 Vdc Emitter−Base Voltage VEBO 5 Vdc Collector Current IC 1 Adc Total Power Dissipation @ TA = 25°C (Note 1) Derate above 25°C PD 1.5 12 W mW/°C Operating and Storage Temperature Range TJ, Tstg −65 to 150 °C Rating THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Ambient (surface mounted) Maximum Temperature for Soldering Purposes Time in Solder Bath Symbol Max Unit RqJA 83.3 °C/W 260 10 °C Sec TL Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Device mounted on a FR−4 glass epoxy printed circuit board 1.575 in x 1.575 in x 0.0625 in; mounting pad for the collector lead = 0.93 sq in. © Semiconductor Components Industries, LLC, 2014 March, 2014 − Rev. 10 1 3 SOT−223 CASE 318E STYLE 1 MARKING DIAGRAM AYW xxxxxG G 1 xx = Specific Device Code A = Assembly Location Y = Year W = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Publication Order Number: BCP56T1/D BCP56 Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO 100 − − Vdc Collector−Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) V(BR)CEO 80 − − Vdc Emitter−Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO 5.0 − − Vdc Collector−Base Cutoff Current (VCB = 30 Vdc, IE = 0) ICBO − − 100 nAdc Emitter−Base Cutoff Current (VEB = 5.0 Vdc, IC = 0) IEBO − − 10 mAdc 25 40 63 100 25 − − − − − − 250 160 250 − Characteristics OFF CHARACTERISTICS ON CHARACTERISTICS (Note 2) hFE DC Current Gain (IC = 5.0 mA, VCE = 2.0 V) (IC = 150 mA, VCE = 2.0 V) All Part Types BCP56 BCP56−10 BCP56−16 All Types (IC = 500 mA, VCE = 2.0 V) − Collector−Emitter Saturation Voltage (IC = 500 mAdc, IB = 50 mAdc) VCE(sat) − − 0.5 Vdc Base−Emitter On Voltage (IC = 500 mAdc, VCE = 2.0 Vdc) VBE(on) − − 1.0 Vdc fT − 130 − MHz DYNAMIC CHARACTERISTICS Current−Gain − Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 35 MHz) Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0% ORDERING INFORMATION Device BCP56T1G Marking Package Shipping† BH SOT−223 (Pb−Free) 1000 / Tape & Reel BH SOT−223 (Pb−Free) 4000 / Tape & Reel BH−10 SOT−223 (Pb−Free) 1000 / Tape & Reel BH−10 SOT−223 (Pb−Free) 4000 / Tape & Reel BH−16 SOT−223 (Pb−Free) 1000 / Tape & Reel BH−16 SOT−223 (Pb−Free) 4000 / Tape & Reel SBCP56T1G* BCP56T3G SBCP56T3G* BCP56−10T1G SBCP56−10T1G* BCP56−10T3G NSVBCP56−10T3G* BCP56−16T1G SBCP56−16T1G* BCP56−16T3G SBCP56−16T3G* †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 2 BCP56 Series TYPICAL ELECTRICAL CHARACTERISTICS hFE, DC CURRENT GAIN 1000 TJ = 125°C TJ = 25°C 100 10 TJ = - 55°C 1 10 100 1000 IC, COLLECTOR CURRENT (mA) 1000 80 60 TJ = 25°C C, CAPACITANCE (pF) f, T CURRENT‐GAIN — BANDWIDTH PRODUCT (MHz) Figure 1. DC Current Gain 100 40 Cibo 20 10 8.0 6.0 10 1.0 10 100 IC, COLLECTOR CURRENT (mA) Cobo 4.0 0.1 1000 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current−Gain − Bandwidth Product 100 Figure 3. Capacitance 1.2 1 IC/IB = 10 1.1 150°C VBE(sat), BASE−EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR−EMITTER SATURATION VOLTAGE (V) 50 25°C −55°C 0.1 IC/IB = 10 1.0 0.9 −55°C 0.8 0.7 25°C 0.6 0.5 150°C 0.4 0.3 0.2 0.01 0.001 0.01 0.1 0.001 1 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector Emitter Saturation Voltage vs. Collector Current Figure 5. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 3 1 BCP56 Series 1.2 1.1 VCE = 2 V 1.0 0.9 −55°C 0.8 25°C 0.7 0.6 0.5 150°C 0.4 0.3 0.2 0.001 0.01 0.1 1 VCE , COLLECTOR‐EMITTER VOLTAGE (VOLTS) VBE(on), BASE−EMITTER VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS 1.0 TJ = 25°C 0.8 IC = 10mA 0.6 100mA 250mA 500mA 0.4 0.2 0 0.05 0.1 IC, COLLECTOR CURRENT (A) Figure 6. Base Emitter Voltage vs. Collector Current 0.2 1.0 2.0 0.5 5.0 10 IC, COLLECTOR CURRENT (mA) 20 50 Figure 7. Collector Saturation Region 1.6 1 1S 1 mS 1.4 PD, POWER DISSIPATION (W) IC, COLLECTOR CURRENT (A) 50 mA 100 mS 10 mS 0.1 1.2 1.0 0.8 0.6 0.4 0.2 0.01 0.1 1 10 100 0.0 0 VCE, COLLECTOR EMITTER VOLTAGE (V) 100 40 60 80 120 TA, AMBIENT TEMPERATURE (°C) Figure 8. Safe Operating Area Figure 9. Power Derating Curve http://onsemi.com 4 20 140 160 BCP56 Series PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE N D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCH. 4 HE DIM A A1 b b1 c D E e e1 L L1 HE E 1 2 3 b e1 e 0.08 (0003) A1 C q A MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 0.20 1.50 6.70 0° q L STYLE 1: PIN 1. 2. 3. 4. L1 MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 −−− −−− 1.75 2.00 7.00 7.30 10° − MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.008 0.060 0.264 0° INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 −−− 0.069 0.276 − MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 −−− 0.078 0.287 10° BASE COLLECTOR EMITTER COLLECTOR SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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