BCW66GLT1G,
SBCW66GLT1G
General Purpose Transistor
NPN Silicon
www.onsemi.com
Features
• S Prefix for Automotive and Other Applications Requiring Unique
•
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SOT−23
(TO−236)
CASE 318
STYLE 6
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector −Emitter Voltage
VCEO
45
Vdc
Collector −Base Voltage
VCBO
75
Vdc
Emitter −Base Voltage
VEBO
5.0
Vdc
Collector Current − Continuous
IC
800
mAdc
Collector Current − Pulsed
IC
1200
mAdc
COLLECTOR
3
1
BASE
2
EMITTER
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board
(Note 1), TA = 25°C
Derate above 25°C
PD
225
mW
1.8
mW/°C
556
°C/W
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
−55 to +150
°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
RqJA
PD
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
EG MG
G
EG
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(*Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
BCW66GLT1G
SOT−23
(Pb−Free)
3,000/Tape & Reel
SBCW66GLT1G
SOT−23
(Pb−Free)
3,000/Tape & Reel
BCW66GLT3G
SOT−23 10,000/Tape & Reel
(Pb−Free)
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
October, 2016 − Rev. 6
1
Publication Order Number:
BCW66GLT1/D
BCW66GLT1G, SBCW66GLT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)CEO
45
−
−
Vdc
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector −Emitter Breakdown Voltage (IC = 10 mAdc, VEB = 0)
V(BR)CES
75
−
−
Vdc
Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
−
−
Vdc
−
−
−
−
20
20
nAdc
mAdc
−
−
20
nAdc
50
110
160
60
−
−
−
−
−
−
400
−
−
−
−
−
0.7
0.3
−
−
2.0
fT
100
−
−
MHz
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Cobo
−
−
12
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Cibo
−
−
80
pF
Noise Figure
(VCE = 5.0 Vdc, IC = 0.2 mAdc, RS = 1.0 kW, f = 1.0 kHz, BW = 200 Hz)
NF
−
−
10
dB
Turn−On Time (IB1 = IB2 = 15 mAdc)
ton
−
−
100
ns
Turn−Off Time (IC = 150 mAdc, RL = 150 W)
toff
−
−
400
ns
Collector Cutoff Current
(VCE = 45 Vdc, IE = 0)
(VCE = 45 Vdc, IE = 0, TA = 150°C)
ICES
Emitter Cutoff Current (VEB = 4.0 Vdc, IC = 0)
IEBO
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 500 mAdc, VCE = 2.0 Vdc)
hFE
−
Collector −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
(IC = 100 mAdc, IB = 10 mAdc)
VCE(sat)
Base −Emitter Saturation Voltage
(IC = 500 mAdc, IB = 50 mAdc)
VBE(sat)
Vdc
Vdc
SMALL− SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(IC = 20 mAdc, VCE = 10 Vdc, f = 100 MHz)
SWITCHING CHARACTERISTICS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
1
1.2
0.1
0.01
TA = 25°C
TA = 150°C
1.0
0.9
TA = −55°C
0.8
0.7
0.6
TA = 25°C
0.5
0.4
0.3
0.2
TA = −55°C
0.1
IC/IB = 10
1.1
VBE(sat), BASE−EMITTER
SATURATION VOLTAGE (V)
VCE, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
IC/IB = 10
1
10
100
1000
TA = 150°C
0.1
1
10
100
1000
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 2. Base Emitter Saturation Voltage vs.
Collector Current
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2
BCW66GLT1G, SBCW66GLT1G
TYPICAL CHARACTERISTICS
1000
VCE(sat), COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
2.0
VCE = 2 V
TA = 150°C
TA = 25°C
TA = −55°C
100
10
0.01
0.1
1
10
100
1.4
100 mA
1.2
200 mA
500 mA
IC = 800 mA
1.0
0.8
0.6
0.4
0.2
0
0.1
1
10
100
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 3. DC Current Gain vs. Collector
Current
Figure 4. Saturation Region
100
1.0
VCE = 2 V
0.9
f = 1 MHz
Cibo
0.8 TA = −55°C
0.7
TA = 25°C
0.6
0.5
0.4
Cobo
10
TA = 150°C
0.3
1
0.2
0.1
1
10
100
0.1
1000
1
10
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (V)
Figure 5. Base−Emitter Turn−On Voltage vs.
Collector Current
Figure 6. Capacitance
100
10,000
1000
VCE = 2 V
TA = 25°C
IC, COLLECTOR CURRENT (mA)
ftau, CURRENT GAIN BANDWIDTH
PRODUCT (MHz)
1.6
1000
C, CAPACITANCE (pF)
VBE(ON), BASE−EMITTER ON VOLTAGE (V)
0.001
TA = 25°C
1.8
100
1s
100 ms
10 ms
1 ms
0.1 ms,
0.01 ms
1000
100
10
Single Pulse Test at TA = 25°C
1
10
0.1
1
10
100
1000
1
10
IC, COLLECTOR CURRENT (mA)
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 7. Current Gain Bandwidth Product vs.
Collector Current
Figure 8. Safe Operating Area
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3
100
BCW66GLT1G, SBCW66GLT1G
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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BCW66GLT1/D