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FDD8451
N-Channel PowerTrench® MOSFET
40V, 28A, 24m:
Features
General Description
Max rDS(on)
24m: at VGS = 10V, ID = 9A
Max rDS(on)
30m: at VGS = 4.5V, ID = 7A
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, fast
switching speed and extremely low rDS(on).
Low gate charge
Fast Switching
Application
High performance trench technology for extremely low
rDS(on)
LE
A
Backlight inverter
M ENTATIO
LE
N
MP
RoHS compliant
DC/DC converter
REE I
DF
D
G
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
Ratings
40
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current -Continuous@TC=25°C
28
-Continuous @TA=25°C
ID
(Note 1a)
EAS
Single Pulse Avalanche Energy
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature
9
A
78
-Pulsed
(Note 3)
20
mJ
30
W
-55 to 150
°C
Thermal Characteristics
RTJC
Thermal Resistance, Junction to Case
4.1
°C/W
RTJA
Thermal Resistance, Junction to Ambient
(Note 1a)
40
°C/W
RTJA
Thermal Resistance, Junction to Ambient
(Note 1b)
96
°C/W
Package Marking and Ordering Information
Device Marking
FDD8451
Device
FDD8451
©2009 Fairchild Semiconductor Corporation
FDD8451 Rev. 1.2
Package
D-PAK(TO-252)
1
Reel Size
13’’
Tape Width
16mm
Quantity
2500 units
www.fairchildsemi.com
FDD8451 N-Channel PowerTrench® MOSFET
March 2015
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250PA, VGS = 0V
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250PA, referenced to
25°C
40
V
IDSS
Zero Gate Voltage Drain Current
VDS = 32V, VGS = 0V
1
PA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±100
nA
3
V
33.5
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250PA
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250PA, referenced to
25°C
VGS = 10V, ID = 9A
19
24
Drain to Source On Resistance
VGS = 4.5V, ID = 7A
23
30
VGS = 10V, ID = 9A
TJ = 150°C
32
41
VDS = 5V, ID = 9A
29
rDS(on)
gFS
Forward Transcondductance
1
2.1
-5.7
mV/°C
m:
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
780
990
pF
112
150
pF
72
110
pF
:
1.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
7
14
3
10
td(off)
Turn-Off Delay Time
ns
19
34
ns
tf
Qg
Fall Time
2
10
ns
Total Gate Charge at 10V
16
20
nC
Qg
Total Gate Charge at 5V
Qgs
Gate to Source Gate Charge
8.6
11
Qgd
Gate to Drain “Miller”Charge
VDD = 20V, ID = A
VGS = 10V, RGEN = 6:
VDS= 20V, ID = 9A
VGS = 10V
ns
nC
2.5
nC
3.7
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = 9A
0.87
1.2
V
trr
Reverse Recovery Time
IF = 9A, di/dt = 100A/Ps
25
38
ns
Qrr
Reverse Recovery Charge
IF = 9A, di/dt = 100A/Ps
19
29
nC
Notes:
1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJCis guaranteed by design while RTJA is determined by the user’s board design.
a)
40 °C/W when mounted on a
1 in2 pad of 2 oz copper
b)
96 °C/W when mounted on
a minimum pad
2: Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3: Starting TJ = 25 °C, L = 0.1 mH, IAS = 20 A, VDD = 36 V, VGS = 10 V.
FDD8451 Rev. 1.2
2
www.fairchildsemi.com
FDD8451 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
ID, DRAIN CURRENT (A)
VGS = 10V
50
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
60
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
VGS = 4V
40
VGS = 4.5V
30
VGS = 3.5V
20
10
VGS = 3V
0
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 3V
2.5
VGS = 3.5V
2.0
VGS = 4V
1.5
VGS = 5V
1.0
VGS = 10V
0.5
0
10
20
30
40
ID, DRAIN CURRENT(A)
50
60
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
2.0
160
ID = 9A
VGS = 10V
1.8
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (m:)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
3.0
4
Figure 1. On Region Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
ID = 10A
200
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
120
80
TJ = 175oC
40
TJ = 25oC
0
2
Figure 3. Normalized On Resistance vs Junction
Temperature
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to Source
Voltage
100
IS, REVERSE DRAIN CURRENT (A)
40
ID, DRAIN CURRENT (A)
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
3.5
PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX
30
20
TJ = 175oC
10
TJ = 25oC
TJ = -55oC
0
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
Figure 5. Transfer Characteristics
FDD8451 Rev. 1.2
VGS = 0V
10
1
0.1
0.01
1E-3
0.0
TJ = 175oC
TJ = 25oC
TJ = -55oC
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
www.fairchildsemi.com
FDD8451 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3000
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 15V
VDD = 20V
6
VDD = 25V
4
Coss
100
Crss
2
f = 1MHz
VGS = 0V
0
0
4
8
12
Qg, GATE CHARGE(nC)
10
0.1
16
Figure 7. Gate Charge Characteristics
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
100
30
TJ = 25oC
10
TJ = 125oC
TJ = 150oC
1
1E-3
0.01
0.1
25
VGS = 10V
20
15
VGS =4.5V
10
5
1
10
0
100
o
RTJC = 4.1 C/W
40
60
tAV, TIME IN AVALANCHE(ms)
10000
P(PK), PEAK TRANSIENT POWER (W)
100us
1ms
10
10ms
SINGLE PULSE
TJ = MAX RATED
TC = 25OC
0.1
1
100ms
DC
10
80
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
FDD8451 Rev. 1.2
120
160 175
140
TEMPERATURE(oC)
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
LIMITED BY
PACKAGE
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
100
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
100
ID, DRAIN CURRENT (A)
80
TC, CASE
Figure 9. Unclamped Inductive Switching
Capability
1
40
Figure 8. Capacitance vs Drain to Source Voltage
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
Ciss
1000
I = I25
175 – T C
---------------------150
100
SINGLE PULSE
10
-5
10
-4
10
-3
-2
-1
10
10
10
t, PULSE WIDTH (s)
0
10
1
10
Figure 12. Single Pulse Maximum Power
Dissipation
4
www.fairchildsemi.com
FDD8451 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZTJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.005
-5
10
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJC x RTJC + TC
SINGLE PULSE
-4
10
-3
-2
10
10
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDD8451 Rev. 1.2
5
www.fairchildsemi.com
FDD8451 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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