FDD8782

FDD8782/FDU8782 N-Channel PowerTrench® MOSFET 25V, 35A, 11mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. „ Max rDS(on) = 11.0mΩ at VGS = 10V, ID = 35A „ Max rDS(on) = 14.0mΩ at VGS = 4.5V, ID = 35A „ Low gate charge: Qg(10) = 18nC(Typ), VGS = 10V „ Low gate resistance Application „ Avalanche rated and 100% tested „ RoHS Compliant „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D G D I-PAK G D S (TO-251AA) G S Short Lead I-PAK S MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter Ratings 25 Units V VGS Gate to Source Voltage ±20 V Drain Current -Continuous (Package Limited) 35 ID -Continuous (Die Limited) 54 -Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature (Note 1) (Note 2) A 321 72 mJ 50 W -55 to 175 °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case TO-252,TO-251 3.0 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,TO-251 100 °C/W RθJA Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area 52 °C/W Package Marking and Ordering Information Device Marking FDD8782 Device FDD8782 Package TO-252AA Reel Size 13’’ Tape Width 16mm Quantity 2500 units FDU8782 FDU8782 TO-251AA N/A(Tube) N/A 75 units FDU8782 FDU8782_F071 TO-251AA N/A(Tube) N/A 75 units ©2009 Fairchild Semiconductor Corporation FDD8782/FDU8782 Rev. 1.2 1 www.fairchildsemi.com FDD8782/FDU8782 N-Channel PowerTrench® MOSFET March 2015 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250μA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 20V, VGS = 0V IGSS Gate to Source Leakage Current VGS = ±20V 25 V mV/°C 14.3 1 TJ = 150°C 250 μA ±100 nA 2.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250μA, referenced to 25°C rDS(on) Drain to Source On Resistance 1.2 1.7 -6.5 mV/°C VGS = 10V, ID = 35A 8.5 11.0 VGS = 4.5V, ID = 35A 11.0 14.0 VGS = 10V, ID = 35A TJ = 175°C 12.1 18.0 920 1220 pF 230 310 pF 160 240 pF mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13V, VGS = 0V, f = 1MHz f = 1MHz Ω 1.4 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge VGS = 0V to 10V Qg Total Gate Charge VGS = 0V to 5V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller”Charge VDD = 13V, ID = 35A VGS = 10V, RGS = 9Ω VDD = 13V ID = 35A Ig = 1.0mA 7 14 ns 9 18 ns 22 36 ns 14 25 ns 18 25 nC 9.4 13 nC 3.1 nC 4.0 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0V, IS = 35A 0.96 1.25 VGS = 0V, IS = 15A 0.86 1.2 IF = 35A, di/dt = 100A/μs 25 38 ns IF = 35A, di/dt = 100A/μs 17 26 nC V Notes: 1: Pulse time < 300us,Duty cycle = 2%. 2: Starting TJ = 25oC, L = 1.0mH, IAS = 12A ,VDD = 23V, VGS = 10V. FDD8782/FDU8782 Rev. 1.2 2 www.fairchildsemi.com FDD8782/FDU8782 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted VGS = 10V ID, DRAIN CURRENT (A) 60 50 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 70 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX VGS = 4.5V 40 VGS = 3.5V 30 20 10 0 VGS = 3V 0 1 2 3 VDS, DRAIN TO SOURCE VOLTAGE (V) 4 VGS = 3V 5 4 VGS = 3.5V 3 2 VGS = 4.5V 1 0 VGS = 10V 0 10 20 30 40 50 ID, DRAIN CURRENT(A) 60 70 40 1.8 ID = 35A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) ID = 15A PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 30 20 TJ= 175oC 10 TJ = 25oC 0 200 Figure 3. Normalized On Resistance vs Junction Temperature 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance vs Gate to Source Voltage 100 IS, REVERSE DRAIN CURRENT (A) 70 ID, DRAIN CURRENT (A) PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 6 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage rDS(on), ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE Figure 1. On Region Characteristics 7 PULSE DURATION = 80μs DUTY CYCLE = 0.5%MAX 60 50 40 TJ = 175oC 30 20 TJ = 25oC 10 = -55oC TJ 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VGS, GATE TO SOURCE VOLTAGE (V) 4.5 Figure 5. Transfer Characteristics FDD8782/FDU8782 Rev. 1.2 VGS = 0V 10 1 0.1 0.01 1E-3 0.0 TJ = 175oC TJ = 25oC TJ = -55oC 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDD8782/FDU8782 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted 3000 f = 1MHz VGS = 0V VDD = 8V 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 13V 6 VDD = 18V 4 2 0 0 5 10 15 20 1000 Crss 100 0.1 25 Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics 60 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) TJ = 25oC TJ = 125oC 10 TJ = 150oC 1 0.001 0.01 0.1 1 10 50 40 30 VGS = 4.5V 20 o RθJC = 3.0 C/W 10 0 25 100 VGS = 10V 50 75 tAV, TIME IN AVALANCHE(ms) 100 P(PK), PEAK TRANSIENT POWER (W) 10us 100 100us 10 LIMITED BY PACKAGE 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) 1 1ms SINGLE PULSE TJ = MAX RATED TC = 25oC 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 10ms DC 50 175 TC = 25oC VGS = 10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK 1000 CURRENT AS FOLLOWS: 175 – T C ----------------------150 I = I25 100 SINGLE PULSE 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 t, PULSE WIDTH (s) Figure 11. Forward Bias Safe Operating Area FDD8782/FDU8782 Rev. 1.2 150 Figure 10. Maximum Continuous Drain Current vs Case Temperature 7000 500 125 TC, CASE TEMPERATURE(oC) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 30 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 8. Capacitance vs Drain to Source Voltage 50 0.1 Ciss Coss Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDD8782/FDU8782 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted NORMALIZED THERMAL IMPEDANCE, ZθJC 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 1E-3 -5 10 -4 10 -3 -2 -1 10 10 10 t, RECTANGULAR PULSE DURATION(s) 0 10 1 10 Figure 13. Transient Thermal Response Curve FDD8782/FDU8782 Rev. 1.2 5 www.fairchildsemi.com FDD8782/FDU8782 N-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25°C unless otherwise noted TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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