FDD8796/FDU8796
N-Channel PowerTrench® MOSFET
25V, 35A, 5.7mΩ
General Description
Features
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Max rDS(on) = 5.7mΩ at VGS = 10V, ID = 35A
Max rDS(on) = 8.0mΩ at VGS = 4.5V, ID = 35A
Low gate charge: Qg(10) = 37nC(Typ), VGS = 10V
Avalanche rated and 100% tested
A
R EE I
DF
M ENTATIO
LE
N
MP
Application
LE
Low gate resistance
RoHS Compliant
Vcore DC-DC for Desktop Computers and Servers
VRM for Intermediate Bus Architecture
D
G
D
G
S
Short Lead I-PAK
I-PAK
G D S
(TO-251AA)
S
MOSFET Maximum Ratings TC= 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
Ratings
25
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current
35
ID
-Continuous (Package Limited)
-Continuous (Die Limited)
98
-Pulsed
(Note 1)
EAS
Single Pulse Avalanche Energy
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature
A
305
(Note 2)
91
mJ
88
W
-55 to 175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case TO_252, TO_251
1.7
°C/W
RθJA
Thermal Resistance, Junction to Ambient TO_252, TO_251
100
°C/W
RθJA
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
52
°C/W
Package Marking and Ordering Information
Device Marking
FDD8796
Device
FDD8796
Package
TO-252AA
Reel Size
13’’
Tape Width
16mm
Quantity
2500 units
FDU8796
FDU8796
TO-251AA
N/A (Tube)
N/A
75 units
FDU8796
FDU8796_F071
TO-251AA
N/A (Tube)
N/A
75 units
©2006 Fairchild Semiconductor Corporation
FDD8796/FDU8796 Rev. 1.1
1
www.fairchildsemi.com
FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
March 2015
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250µA, referenced to
25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 20V
VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±20V
25
V
mV/°C
7
1
TJ = 150°C
250
µA
±100
nA
2.5
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to
25°C
-6.7
VGS = 10V, ID = 35A
4.5
5.7
VGS = 4.5V, ID = 35A
6.0
8.0
VDS = 10V, ID = 35A
TJ = 175°C
6.9
9.5
1960
2610
pF
455
605
pF
315
475
pF
rDS(on)
Drain to Source On Resistance
1.2
1.8
mV/°C
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
VDS = 13V, VGS = 0V,
f = 1MHz
f = 1MHz
Ω
1.1
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain Charge
VDD =13V, ID = 35A
VGS = 10V, RGS = 20Ω
VGS = 0 to10V
VGS = 0 to 5V VDD =13V,
ID = 35A,
Ig = 1.0mA
10
20
ns
24
39
ns
99
158
ns
57
91
ns
37
52
nC
19
27
nC
6
nC
6
nC
Drain-Source Diode Characteristics
VGS = 0V, IS = 35A
0.9
1.25
VGS = 0V, IS = 15A
0.8
1.0
V
Reverse Recovery Time
IF = 35A, di/dt = 100A/µs
30
45
ns
Reverse Recovery Charge
IF = 35A, di/dt = 100A/µs
23
35
nC
VSD
Source to Drain Diode Voltage
trr
Qrr
Notes:
1: Pulse time < 300µs, Duty cycle = 2%.
2: Starting TJ = 25°C, L = 0.3mH, IAS = 24.7A, VDD = 23V, VGS = 10V.
FDD8796/FDU8796 Rev. 1.1
2
V
www.fairchildsemi.com
FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
ID, DRAIN CURRENT (A)
60
VGS = 10V
50
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 4.5V
40
VGS = 3.5V
30
20
VGS = 3V
10
0
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
70
ID = 35A
VGS = 10V
1.4
1.2
1.0
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
VGS = 3.5V
2.0
VGS = 4.5V
1.5
1.0
0.5
VGS = 10V
0
10
20
30
40
50
ID, DRAIN CURRENT(A)
60
70
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
ID =35A
12
10
TJ = 175oC
8
6
4
TJ = 25oC
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to Source
Voltage
100
IS, REVERSE DRAIN CURRENT (A)
70
ID, DRAIN CURRENT (A)
2.5
2
200
Figure 3. Normalized On Resistance vs Junction
Temperature
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
60
50
TJ = 175oC
40
30
TJ = 25oC
20
TJ = -55oC
10
0
3.0
14
1.8
1.6
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 3V
3.5
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
rDS(on), ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On Region Characteristics
4.0
0
1
2
3
4
VGS, GATE TO SOURCE VOLTAGE (V)
10
TJ = 175oC
TJ = -55oC
1
TJ = 25oC
0.1
0.01
1E-3
0.0
0.3
0.6
0.9
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
FDD8796/FDU8796 Rev. 1.1
VGS = 0V
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
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FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
4000
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 10V
6
VDD = 13V
4
VDD = 16V
2
Coss
Crss
f = 1MHz
VGS = 0V
0
0
10
20
30
Qg, GATE CHARGE(nC)
100
0.1
40
Figure 7. Gate Charge Characteristics
100
10
ID, DRAIN CURRENT (A)
TJ = 25oC
TJ = 125oC
TJ = 150oC
80
VGS = 10V
60
VGS = 4.5V
40
20
o
RθJC = 1.7 C/W
1
0.01
0.1
1
10
0
25
100 300
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive Switching
Capability
P(PK), PEAK TRANSIENT POWER (W)
10000
10us
100
100us
10
LIMITED BY
PACKAGE
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
0.1
50
75
100
125
150
TC, CASE TEMPERATURE(oC)
1
1ms
SINGLE PULSE
TJ = MAX RATED
10ms
DC
TC = 25oC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
40
Figure 11. Forward Bias Safe Operating Area
FDD8796/FDU8796 Rev. 1.1
175
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
1000
ID, DRAIN CURRENT (A)
1
10
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
50
IAS, AVALANCHE CURRENT(A)
1000
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
1000
100
50 -5
10
I = I25
175 – TC
----------------------150
SINGLE PULSE
-4
10
-3
-2
-1
10
10
10
t, PULSE WIDTH (s)
0
10
1
10
Figure 12. Single Pulse Maximum Power
Dissipation
4
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FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
0.1
DUTY CYCLE-DESENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
10
-3
-2
10
10
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION(s)
Figure 13. Transient Thermal Response Curve
FDD8796/FDU8796 Rev. 1.1
5
www.fairchildsemi.com
FDD8796/FDU8796 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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Definition of Terms
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Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
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Obsolete
Not In Production
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Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I75
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