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FDP045N10A-F102

FDP045N10A-F102

  • 厂商:

    MURATA-PS(村田)

  • 封装:

    TO-220-3

  • 描述:

    类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):120A;功率(Pd):263W;导通电阻(RDS(on)@Vgs,Id):4.5mΩ@10V,100A;

  • 数据手册
  • 价格&库存
FDP045N10A-F102 数据手册
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore (_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild_questions@onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP045N10A / FDI045N10A N 沟道 PowerTrench® MOSFET 100 V、 164 A、 4.5 m 特性 说明 • RDS(on) = 3.8 m ( Typ.)@VGS = 10 V, ID = 100 A 此 N 沟道 MOSFET 采用飞兆半导体先进的 Power Trench® 工 艺生产,这一先进工艺是专为最大限度地降低导通电阻并保持卓 越开关性能而定制的。 • 快速开关速度 • 低栅极电荷, QG=54 nC (典型值) • 高性能沟道技术可实现极低的 RDS(on) 应用 • 高功率和高电流处理能力 • 用于 ATX/ 服务器 / 电信 PSU 的同步整流 • 符合 RoHS 标准 • 电池保护电路 • 电机驱动和不间断电源 • 微型光伏逆变器 D GD S G G DS TO-220 I2-PAK S MOSFET 最大额定值 TC =25°C 除非另有说明。 VDSS 漏极-源极电压 FDP045N10A_F102 FDI045N10A_F102 100 VGSS 栅极-源极电压 ±20 符号 参数 - 连续 (TC=25°C,硅限制) 漏极电流 ID IDM 漏极电流 EAS 单脉冲雪崩能量 dv/dt 二极管恢复 dv/dt 峰值 - 连续 (TC = 100°C,硅限制) 116 120 V A (说明 1) 656 A (说明 2) 637 mJ 6.0 V/ns (说明 3) (TC = 25°C) 263 W - 降低至 25°C 以上 1.75 W/°C -55 至 +175 °C 300 °C FDP045N10A_F102 FDI045N10A_F102 单位 PD 功耗 TJ, TSTG 工作和存储温度范围 用于焊接的最大引线温度,距离外壳 1/8",持续 5 秒 TL V 164* - 连续 (TC=25°C,封装限制) - 脉冲 单位 * 计算连续电流(基于最高允许结温)。封装限制电流为 120 A。 热性能 符号 参数 RJC 结至外壳热阻最大值 0.57 RJA 结至环境热阻最大值 62.5 ©2011 飞兆半导体公司 FDP045N10A / FDI045N10A Rev. C1 1 °C/W www.fairchildsemi.com FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET 2014 年 2 月 器件编号 FDP045N10A_F102 顶标 FDP045N10A 封装 TO-220 包装方法 塑料管 卷尺寸 N/A 带宽 N/A 数量 50 个 FDI045N10A_F102 FDI045N10A I2-PAK 塑料管 N/A N/A 50 个 电气特性 TC =25°C 除非另有说明。 符号 参数 测试条件 最小值 典型值 最大值 单位 100 - - V - 0.07 - V/°C A 关断特性 BVDSS BVDSS / TJ 漏极-源极击穿电压 ID = 250 A, VGS = 0 V 击穿电压温度系数 ID=250 A,参考温度为 25°C IDSS 零栅极电压漏极电流 IGSS VDS = 80 V, VGS = 0 V - - 1 VDS = 80 V, TC = 150°C - - 500 栅极 - 体漏电流 VGS = ±20 V, VDS = 0 V - - ±100 VGS(th) RDS(on) 栅极阈值电压 VGS = VDS, ID = 250 A 2.0 - 4.0 V 漏极至源极静态导通电阻 - 3.8 4.5 m gFS 正向跨导 VGS = 10 V, ID = 100 A VDS = 10 V, ID = 100 A - 132 - S nA 导通特性 动态特性 Ciss 输入电容 Coss 输出电容 Crss 反向传输电容 Coss(er) VDS = 50 V, VGS = 0 V f = 1 MHz - 3960 5270 pF - 925 1230 pF - 34 - pF 能量相关输出电容 VDS = 50 V, VGS = 0 V - 1520 - pF Qg(tot) 10 V 的栅极电荷总量 - 54 74 nC Qgs 栅极 - 源极栅极电荷 VGS = 10 V, VDS = 50 V, ID = 100 A nC Qgs2 栅极平台电荷阈值 Qgd 栅极 - 漏极 “ 米勒 ” 电荷 ESR 等效串联电阻 (G-S) (说明 4) f = 1 MHz - 17 - - 8 - nC - 13 - nC - 1.9 -  - 23 56 ns - 26 62 ns - 50 110 ns - 15 40 ns 开关特性 td(on) 导通延迟时间 tr 开通上升时间 td(off) 关断延迟时间 tf 关断下降时间 VDD = 50 V, ID = 100 A, VGS = 10 V, RG = 4.7  (说明 4) 漏极 - 源极二极管特性 IS 漏极 - 源极二极管最大正向连续电流 - - 164* A ISM 漏极 - 源极二极管最大正向脉冲电流 - - 656 A VSD 漏极 - 源极二极管正向电压 VGS = 0 V, ISD = 100 A - - 1.3 V trr 反向恢复时间 - 75 - ns Qrr 反向恢复电荷 VGS = 0 V, VDD = 50 V, ISD = 100 A, dIF/dt = 100 A/s - 120 - nC 注意: 1. 重复额定值:脉冲宽度受限于最大结温。 2. L = 3 mH, IAS = 20.6 A, RG = 25 ,开始 TJ = 25°C。 3. ISD  100 A, di/dt  200 A/s, VDD  BVDSS,开始 TJ=25°C。 4. 本质上独立于工作温度的典型特性。 ©2011 飞兆半导体公司 FDP045N10A / FDI045N10A Rev. C1 2 www.fairchildsemi.com FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET 封装标识与定购信息 图 1. 导通区域特性 图 2. 传输特性 500 500 *Notes: 1. VDS = 10V 2. 250s Pulse Test 100 100 ID, Drain Current[A] ID, Drain Current[A] VGS = 15.0V 10.0V 8.0V 6.5V 6.0V 5.5V 5.0V o o 175 C 25 C 10 o -55 C *Notes: 1. 250s Pulse Test o 2. TC = 25 C 10 0.1 1 1 VDS, Drain-Source Voltage[V] 2 1 图 3. 导通电阻变化与漏极电流 和栅极电压的关系 6 图 4. 体二极管正向电压变化与源极电流 和温度的关系 500 IS, Reverse Drain Current [A] 4.5 RDS(ON) [m], Drain-Source On-Resistance 2 3 4 5 VGS, Gate-Source Voltage[V] VGS = 10V 4.0 VGS = 20V 3.5 100 o 175 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 3.0 0 100 200 300 ID, Drain Current [A] 1 0.0 400 图 5. 电容特性 2. 250s Pulse Test 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] 1.5 图 6. 栅极电荷特性 10000 10 VGS, Gate-Source Voltage [V] Capacitances [pF] Ciss 1000 Coss *Note: 1. VGS = 0V 2. f = 1MHz 100 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0.1 VDS = 20V VDS = 50V VDS = 80V 8 6 4 2 *Note: ID = 100A 0 1 10 VDS, Drain-Source Voltage [V] ©2011 飞兆半导体公司 FDP045N10A / FDI045N10A Rev. C1 100 0 3 10 20 30 40 50 Qg, Total Gate Charge [nC] 60 www.fairchildsemi.com FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET 典型性能特征 图 7. 击穿电压变化与温度的关系 图 8. 导通电阻变化与温度的关系 2.5 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.10 1.05 1.00 0.95 *Notes: 1. VGS = 0V 2. ID = 250A 0.90 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] *Notes: 1. VGS = 10V 2. ID = 100A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 100 10 VGS = 10V 30s 150 100s 125 ID, Drain Current [A] ID, Drain Current [A] 0.5 175 1ms Operation in This Area is Limited by R DS(on) 10ms *Notes: o DC 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse 1 10 VDS, Drain-Source Voltage [V] 100 75 50 25 o o RJC = 0.57 C/W 0 25 100 200 图 11. Eoss 与漏源极电压 50 75 100 125 150 o TC, Case Temperature [ C] 175 图 12. 非箝位感性开关能力 5 IAS, Avalanche Current [A] 50 4 EOSS, [J] 1.0 图 10. 最大漏极电流与壳温的关系 1000 0.1 0.1 1.5 0.0 -100 200 图 9. 最大安全工作区 1 2.0 3 2 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS-VDD) If R = 0 tAV = (L/R)In[(IAS*R)/(1.3*RATED BVDSS-VDD)+1] o STARTING TJ = 25 C 10 o STARTING TJ = 150 C 1 0 0 25 50 75 VDS, Drain to Source Voltage [V] ©2011 飞兆半导体公司 FDP045N10A / FDI045N10A Rev. C1 1 0.01 100 4 0.1 1 10 100 tAV, Time In Avalanche [ms] 1000 www.fairchildsemi.com FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET 典型性能特性 (接上页) FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET 典型性能特性 (接上页) 图 13. 瞬态热响应曲线 ZJC(t),热响应 [oC/W] Thermal Response [ZJC] 1 0.5 0.1 0.2 0.1 PDM 0.05 t1 0.02 0.01 t2 0.01 *Notes: o 1. ZJC(t) = 0.57 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZJC(t) Single pulse 0.001 -5 10 ©2011 飞兆半导体公司 FDP045N10A / FDI045N10A Rev. C1 -4 10 -3 -2 10 10 Rectangular Pulse [sec] t1, 矩形脉冲持续时间 [ 秒Duration ] 5 -1 10 1 www.fairchildsemi.com FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET IG= 常量 图 14. 栅极电荷测试电路与波形 VDS RL VDS 90% VDD VGS RG V 10V GS VGS DUT 10% td(on) tr t on td(off) tf t off 图 15. 阻性开关测试电路与波形 VGS 图 16. 非箝位电感开关测试电路与波形 ©2011 飞兆半导体公司 FDP045N10A / FDI045N10A Rev. C1 6 www.fairchildsemi.com FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop 图 17. 二极管恢复 dv/dt 峰值测试电路与波形 ©2011 飞兆半导体公司 FDP045N10A / FDI045N10A Rev. C1 7 www.fairchildsemi.com FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET 机械尺寸 图 18. TO-220 模塑 3 引线 Jedec 变体 AB (Delta) 封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和 / 或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆公司 产品保修的部分。 随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT220-0I3 ©2011 飞兆半导体公司 FDP045N10A / FDI045N10A Rev. C1 8 www.fairchildsemi.com FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET 机械尺寸 图 19. TO262 (I2PAK) 模塑 3 引脚 Jedec 变体 AA 封装图纸作为一项服务,提供给考虑飞兆半导体元件的客户。具体参数可能会有变化,且不会做出相应通知。请注意图纸上的版本和 / 或日期,并联系飞兆半导体代表核实或获得最新版本。封装规格并不扩大飞兆公司全球范围内的条款与条件,尤其是其中涉及飞兆公司 产品保修的部分。 随时访问飞兆半导体在线封装网页,可以获取最新的封装图纸: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT262-0I3 ©2011 飞兆半导体公司 FDP045N10A / FDI045N10A Rev. C1 9 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website, www.Fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2011 飞兆半导体公司 FDP045N10A / FDI045N10A Rev. C1 10 www.fairchildsemi.com FDP045N10A / FDI045N10A — N 沟道 PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. AccuPower™ Sync-Lock™ F-PFS™ ® AX-CAP®* FRFET® ®* ® SM Global Power Resource PowerTrench BitSiC™ GreenBridge™ PowerXS™ Build it Now™ TinyBoost® Programmable Active Droop™ Green FPS™ CorePLUS™ TinyBuck® ® QFET Green FPS™ e-Series™ CorePOWER™ TinyCalc™ QS™ Gmax™ CROSSVOLT™ TinyLogic® Quiet Series™ GTO™ CTL™ TINYOPTO™ RapidConfigure™ IntelliMAX™ Current Transfer Logic™ TinyPower™ ISOPLANAR™ DEUXPEED® ™ TinyPWM™ Dual Cool™ Marking Small Speakers Sound Louder TinyWire™ Saving our world, 1mW/W/kW at a time™ EcoSPARK® and Better™ TranSiC™ EfficentMax™ SignalWise™ MegaBuck™ TriFault Detect™ ESBC™ SmartMax™ MICROCOUPLER™ TRUECURRENT®* SMART START™ MicroFET™ ® SerDes™ Solutions for Your Success™ MicroPak™ SPM® MicroPak2™ Fairchild® STEALTH™ MillerDrive™ Fairchild Semiconductor® UHC® SuperFET® MotionMax™ FACT Quiet Series™ ® Ultra FRFET™ SuperSOT™-3 mWSaver FACT® UniFET™ OptoHiT™ SuperSOT™-6 FAST® VCX™ OPTOLOGIC® SuperSOT™-8 FastvCore™ VisualMax™ OPTOPLANAR® SupreMOS® FETBench™ VoltagePlus™ SyncFET™ FPS™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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