FDP7N60NZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP7N60NZ / FDPF7N60NZ N-Channel UniFETTM II MOSFET 600 V, 6.5 A, 1.25 Ω Features Description • RDS(on) = 1.05 Ω (Typ.) @ VGS = 10 V, ID = 3.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. • Low Gate Charge (Typ. 13 nC) • Low Crss (Typ. 7 pF) • 100% Avalanche Tested • Improved dv/dt Capability • ESD Improved Capability • RoHS Compliant Applications • LCD/ LED/ PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply D GD S G G D S TO-220 TO-220F S MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDP7N60NZ FDPF7N60NZ / FDPF7N60NZT Unit VDSS Drain to Source Voltage 600 V VGSS Gate to Source Voltage ±30 V ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 6.5 A EAR Repetitive Avalanche Energy (Note 1) 14.7 mJ dv/dt Peak Diode Recovery dv/dt - Continuous (TC = 25oC) - Continuous (TC = 100oC) - Pulsed (Note 1) 6.5* 3.9* 26 Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds - Derate Above 25oC A 275 (Note 3) (TC = 25oC) A 26* (Note 2) PD TL 6.5 3.9 mJ 10 V/ns 147 33 W 1.2 0.26 W/oC -55 to +150 oC 300 oC *Drain current limited by maximum junction temperature. Thermal Characteristics Symbol Parameter FDP7N60NZ FDPF7N60NZ / FDPF7N60NZT RθJC Thermal Resistance, Junction to Case, Max. 0.85 3.8 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 62.5 ©2010 Fairchild Semiconductor Corporation FDP7N60NZ / FDPF7N60NZ Rev. C2 1 Unit oC/W www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ — N-Channel UniFETTM II MOSFET December 2013 Part Number Top Mark FDP7N60NZ FDP7N60NZ Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units FDPF7N60NZ FDPF7N60NZ TO-220F Tube N/A N/A 50 units FDPF7N60NZT FDPF7N60NZ TO-220F Tube N/A N/A 50 units Electrical Characteristics Symbol TC = 25oC unless otherwise noted. Parameter Test Conditions Min. Typ. Max. Unit 600 - - V - 0.6 - V/oC Off Characteristics BVDSS ΔBVDSS / ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 250 μA, VGS = 0 V, TJ = 25oC ID = 250 μA, Referenced to 25oC VDS = 600 V, VGS = 0 V - - 1 VDS = 480 V, TC = 125oC - - 10 VGS = ±25 V, VDS = 0 V - - ±10 μA μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250 μA 3 - 5 V Static Drain to Source On Resistance VGS = 10 V, ID = 3.25 A - 1.05 1.25 Ω gFS Forward Transconductance VDS = 20 V, ID = 3.25 A - 7.3 - S VDS = 25 V, VGS = 0 V, f = 1 MHz - 550 730 pF - 70 90 pF - 7 10 pF - 13 17 nC - 3 - nC - 5.6 - nC - 17.5 45 ns - 30 70 ns - 40 90 ns - 25 60 ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 480 V, ID = 6.5 A, VGS = 10 V (Note 4) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 300 V, ID = 6.5 A, VGS = 10 V, RG = 25 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 6.5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 26 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 6.5 A - - 1.4 V trr Reverse Recovery Time 250 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 6.5 A, dIF/dt = 100 A/μs - 1.4 - μC Notes: 1: Repetitive rating: pulse-width limited by maximum junction temperature. 2: L = 13 mH, IAS = 6.5 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C. 3: ISD ≤ 6.5 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C. 4: Essentially independent of operating temperature typical characteristics. ©2010 Fairchild Semiconductor Corporation FDP7N60NZ / FDPF7N60NZ Rev. C2 2 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ — N-Channel UniFETTM II MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 20 ID, Drain Current[A] 10 ID, Drain Current[A] VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 1 10 o 150 C o 25 C 1 o -55 C *Notes: 1. 250μs Pulse Test * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.1 0.1 0.1 1 VDS, Drain-Source Voltage[V] 10 20 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 5 6 7 VGS, Gate-Source Voltage[V] 100 IS, Reverse Drain Current [A] 1.8 1.6 1.4 VGS = 10V 1.2 VGS = 20V 1.0 o 150 C 10 o 25 C Notes: 1. VGS = 0V 2. 250μs Pulse Test o 0.8 * Note : TJ = 25 C 0 2 4 6 8 10 ID, Drain Current [A] 12 1 0.4 14 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss Coss 100 1 0.1 1.4 10 1000 10 0.6 0.8 1.0 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 5000 Capacitances [pF] 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.0 RDS(on) [Ω], Drain-Source On-Resistance 4 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss * Note: 1. VGS = 0V 2. f = 1MHz 1 10 VDS, Drain-Source Voltage [V] ©2010 Fairchild Semiconductor Corporation FDP7N60NZ / FDPF7N60NZ Rev. C2 VDS = 120V VDS = 300V VDS = 480V 8 6 4 2 * Note : ID = 6.5A 0 30 3 0 2 4 6 8 10 Qg, Total Gate Charge [nC] 12 14 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs Temperature 3.0 RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250uA 0.8 -100 -50 0 50 100 o TJ, Junction Temperature [ C] 2.5 2.0 1.5 1.0 * Notes : 1. VGS = 10V 2. ID = 3.25A 0.5 0 -100 150 Figure 9. Maximum Safe Operating Area - FDPF7N60NZ / FDPF7N60NZT -50 0 50 100 o TJ, Junction Temperature [ C] Figure 10. Maximum Safe Operating Area - FDP7N60NZ 100 100 30μs ID, Drain Current [A] ID, Drain Current [A] 10μs 100μs 10 1ms 10ms 1 Operation in This Area is Limited by R DS(on) DC * Notes : 0.1 10 100μs 1ms 10ms 1 Operation in This Area is Limited by R DS(on) o 1. TC = 25 C o o 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] DC * Notes : 0.1 o 1. TC = 25 C 0.01 150 0.01 1000 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 1000 Figure 11. Maximum Drain Current vs. Case Temperature ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 o TC, Case Temperature [ C] ©2010 Fairchild Semiconductor Corporation FDP7N60NZ / FDPF7N60NZ Rev. C2 150 4 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) FDP7N60NZ / FDPF7N60NZ — N-Channel UniFETTM II MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve - FDPF7N60NZ / FDPF7N60NZT ZThermal Response [oC/W] θJC(t), Thermal Response [ZθJC ] ZθJC(t), Thermal Response [oC/W] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 o 1. ZθJC(t) = 3.8 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 t2 * Notes : -4 10 -3 10 -2 -1 0 1 2 10 10 10 10 Pulse tRectangular PulseDuration Duration [sec] [sec] 1, Rectangular 10 3 10 o ZThermal Response Response [ZθJC[]C/W] θJC(t), Thermal Figure 13. Transient Thermal Response Curve - FDP7N60NZ 5 1 0.5 0.2 0.1 0.1 PDM 0.05 t1 0.02 0.01 0.01 0.001 -5 10 t2 * Notes : Single pulse o 1. ZθJC(t) = 0.85 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) -4 10 -3 10 -2 -1 10 10 1 10 [sec] tRectangular , RectangularPulse Pulse Duration Duration [sec] 2 10 3 10 1 ©2010 Fairchild Semiconductor Corporation FDP7N60NZ / FDPF7N60NZ Rev. C2 5 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ — N-Channel UniFETTM II MOSFET IG = const. Figure 14. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 15. Resistive Switching Test Circuit & Waveforms VGS Figure 16. Unclamped Inductive Switching Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FDP7N60NZ / FDPF7N60NZ Rev. C2 6 www.fairchildsemi.com FDP7N60NZ / FDPF7N60NZ — N-Channel UniFETTM II MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 17. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2010 Fairchild Semiconductor Corporation FDP7N60NZ / FDPF7N60NZ Rev. C2 7 www.fairchildsemi.com SUPPLIER "B" PACKAGE SHAPE 3.50 10.67 9.65 E SUPPLIER "A" PACKAGE SHAPE 3.40 2.50 16.30 13.90 IF PRESENT, SEE NOTE "D" 16.51 15.42 E 9.40 8.13 E 1 [2.46] 2 3 C 4.10 2.70 14.04 12.70 2.13 2.06 FRONT VIEWS 4.70 4.00 1.62 H 1.42 "A1" 8.65 7.59 SEE NOTE "F" 1.62 1.10 2.67 2.40 1.00 0.55 6.69 6.06 OPTIONAL CHAMFER E 14.30 11.50 NOTE "I" BOTTOM VIEW 3 0.60 0.36 SIDE VIEW 2.85 2.10 2 1 BACK VIEW NOTES: A) REFERENCE JEDEC, TO-220, VARIATION AB B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS COMMON TO ALL PACKAGE SUPPLIERS EXCEPT WHERE NOTED [ ]. D) LOCATION OF MOLDED FEATURE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE) E DOES NOT COMPLY JEDEC STANDARD VALUE. F) "A1" DIMENSIONS AS BELOW: SINGLE GAUGE = 0.51 - 0.61 DUAL GAUGE = 1.10 - 1.45 G) DRAWING FILE NAME: TO220B03REV9 H PRESENCE IS SUPPLIER DEPENDENT I) SUPPLIER DEPENDENT MOLD LOCKING HOLES IN HEATSINK. B A 10.36 9.96 B 3.28 3.08 7.00 3.40 3.20 2.66 2.42 0.70 SEE NOTE "F" SEE NOTE "F" 6.88 6.48 1 X 45° B 16.00 15.60 16.07 15.67 (3.23) B 1 2.14 3 1.47 1.24 2.96 2.56 0.90 0.70 10.05 9.45 0.50 M A 30° 0.45 0.25 2.54 B 2.54 B 4.90 4.50 NOTES: A. EXCEPT WHERE NOTED CONFORMS TO EIAJ SC91A. B DOES NOT COMPLY EIAJ STD. VALUE. C. ALL DIMENSIONS ARE IN MILLIMETERS. D. DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS. E. DIMENSION AND TOLERANCE AS PER ASME Y14.5-1994. F. OPTION 1 - WITH SUPPORT PIN HOLE. OPTION 2 - NO SUPPORT PIN HOLE. G. DRAWING FILE NAME: TO220M03REV5 0.60 0.45 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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