FDP8440

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDP8440 N-Channel PowerTrench® MOSFET 40 V, 277 A, 2.2 mΩ Features Applications • RDS(on) = 1.64 mΩ (Typ.)@ VGS = 10 V, ID = 80 A • Power Tools • Qg(tot) = 345 nC (Typ.)@ VGS = 10 V • Motor Drives and Uninterruptible Power Supplies • Low Miller Charge • Synchronous Rectification • Low Qrr Body Diode • Battery Protection Circuit • UIS Capability (Single Pulse and Repetitive Pulse) • RoHS Compliant D G DS G TO-220 S MOSFET Maximum Ratings Symbol TC = 25oC unless otherwise noted Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage Drain Current ID - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) IDM Drain Current EAS Single Pulsed Avalanche Energy - Pulsed PD Power Dissipation TJ, TSTG Operating and Storage Temperature Range TL Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds FDP8440 Unit 40 V ±20 V 277* 196* 100 A (Note 1) 500 A (Note 2) 1682 mJ (TC = 25oC) 306 W - Derate above 25oC 2.04 W/oC -55 to +175 o C 300 o C *Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 100A. Thermal Characteristics RθJC Thermal Resistance, Junction to Case, Max. 0.49 RθCS Thermal Resistance, Case to Sink (Typ.) 0.5 RθJA Thermal Resistance, Junction to Ambient, Max. 62.5 ©2009 Fairchild Semiconductor Corporation FDP8440 Rev. C2 1 o C/W oC/W o C/W www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET April 2013 Device Marking Device Package Reel Size Tape Width Quantity FDP8440 FDP8440 TO-220 N/A N/A 50units Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Conditions Min Typ Max Unit 40 -- -- V -- -- 1 μA Off Characteristics BVDSS Drain to Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0V, ID = 250μA VDS = 32V -- -- 250 μA VGS = ±20V -- -- ±100 nA VDS = VGS, ID = 250μA 1 -- 3 V VGS = 4.5V, ID = 80A -- 1.88 2.4 VGS = 10V, ID = 80A -- 1.64 2.2 VGS = 10V, ID = 80A, TC = 175oC -- 3.00 4.4 -- 18600 24740 VGS = 0V TC = 150oC On Characteristics VGS(th) Gate to Source Threshold Voltage RDS(on) Static Drain-Source On-Resistance mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25V, VGS = 0V, f = 1.0MHz pF -- 1840 2450 pF -- 1400 2100 pF RG Gate Resistance VGS = 0.5V, f = 1MHz -- 1.1 -- Ω Qg(tot) Total Gate Charge at 10V VGS = 0V to 10V -- 345 450 nC Qg(2) Threshold Gate Charge VGS = 0V to 2V VDD = 20V -- 32.5 -- nC Qgs Gate to Source Gate Charge ID = 80A -- 49 -- nC Qgs2 Gate Charge Threshold to Plateau Ig = 1.0mA -- 16.5 -- nC Qgd Gate to Drain “Miller” Charge -- 74 -- nC -- 175 360 ns Switching Characteristics tON Turn-On Time (VGS = 10V) td(on) Turn-On Delay Time tr Rise Time -- 43 95 ns -- 130 275 ns td(off) tf Turn-Off Delay Time -- 435 875 ns Fall Time -- 290 590 ns tOFF Turn-Off Time -- 730 1470 ns VDD = 20V,ID = 80A VGS = 10V, RGEN = 7Ω Drain-Source Diode Characteristics and Maximum Ratings ISD = 80A -- -- 1.25 V ISD = 40A -- -- 1.0 V Reverse Recovery Time ISD = 75A, dISD/dt = 100A/μs -- 59 -- ns Reverse Recovery Charge ISD = 75A, dISD/dt = 100A/μs -- 77 -- nC VSD Source to Drain Diode Voltage trr QRR NOTES: 1: Pulse width limited by maximum junction temperature. 2: Starting TJ = 25°C, L = 1mH, IAS = 58A, VDD = 36V, VGS = 10V. ©2009 Fairchild Semiconductor Corporation FDP8440 Rev. C2 2 www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 400 400 100 ID,Drain Current[A] ID,Drain Current[A] 100 VGS = 10.0 V 7.0 V 5.0 V 3.5 V 3.0 V 2.5 V 10 o 150 C o -55 C 10 o 25 C * Notes : 1. 250μs Pulse Test 1 * Notes : 1. VDS = 20V 2. 250μs Pulse Test o 0.4 0.04 2. TC = 25 C 1 0.1 VDS,Drain-Source Voltage[V] 1 0 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1.75 IS, Reverse Drain Current [A] 1000 VGS = 4.5V 1.70 1.65 VGS = 10V 100 o 150 C o 25 C 10 Notes: 1. VGS = 0V o 2. 250μs Pulse Test *Note: TC = 25 C 1.6 0 50 100 150 ID, Drain Current [A] 200 1 0.3 250 Figure 5. Capacitance Characteristics VGS, Gate-Source Voltage [V] Ciss 18000 12000 * Note: 1. VGS = 0V 2. f = 1MHz Coss 1.2 10 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 24000 0.6 0.9 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 30000 Capacitances [pF] 6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 1.80 RDS(ON)[mΩ], Drain-Source On-Resistance 2 4 VGS,Gate-Source Voltage[V] 6000 VDS = 25V VDS = 20V VDS = 15V 8 6 4 2 Crss 0 -1 10 0 10 VDS, Drain-Source Voltage [V] ©2009 Fairchild Semiconductor Corporation FDP8440 Rev. C2 1 10 * Note : ID = 80A 0 0 20 3 100 200 300 Qg, Total Gate Charge [nC] 400 www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 rDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.1 1.0 0.9 * Notes : 1. VGS = 0V 2. ID = 250μA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] 1.5 1.0 0.5 * Notes : 1. VGS = 10V 2. ID = 80A 0.0 -100 200 -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Safe Operating Area Figure 9. Unclamped Inductive Switching Capability 3000 200 1000 ID, Drain Current [A] 100 IAS, AVALANCHE CURRENT(A) 2.0 o TJ = 25 C o TJ = 150 C 10 100μ s 100 10 1ms Operation in This Area is Limited by R DS(on) 10ms *Notes: 1 o 1. TC = 25 C 100ms o 1 0.01 2. TJ = 175 C 3. Single Pulse 0.1 0.1 1 10 100 1000 1 10000 10 VDS, Drain-Source Voltage [V] tAV, TIME IN AVALANCHE(ms) Figure 11. Transient Thermal Response Curve Thermal Response [ZθJC] 1 0.5 0.1 0.2 0.1 0.01 t1 t2 0.02 * Notes : 0.01 o 1. ZθJC(t) = 0.49 C/W Max. 2. Duty Factor, D=t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.001 -5 10 ©2009 Fairchild Semiconductor Corporation FDP8440 Rev. C2 PDM 0.05 -4 10 -3 -2 10 10 Rectangular Pulse Duration [sec] 4 -1 10 0 10 www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET Typical Performance Characteristics (Continued) FDP8440 N-Channel PowerTrench® MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FDP8440 Rev. C2 5 www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2009 Fairchild Semiconductor Corporation FDP8440 Rev. C2 6 www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET Mechanical Dimensions TO-220B03 ©2009 Fairchild Semiconductor Corporation FDP8440 Rev. C2 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I64 ©2009 Fairchild Semiconductor Corporation FDP8440 Rev. C2 8 www.fairchildsemi.com FDP8440 N-Channel PowerTrench® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 2Cool™ Sync-Lock™ FPS™ ® AccuPower™ F-PFS™ ®* ® ® ® PowerTrench AX-CAP * FRFET SM Global Power Resource PowerXS™ BitSiC™ TinyBoost™ Green Bridge™ Programmable Active Droop™ Build it Now™ TinyBuck™ QFET® CorePLUS™ Green FPS™ TinyCalc™ CorePOWER™ QS™ Green FPS™ e-Series™ TinyLogic® CROSSVOLT™ Quiet Series™ Gmax™ TINYOPTO™ CTL™ RapidConfigure™ GTO™ TinyPower™ Current Transfer Logic™ IntelliMAX™ ™ TinyPWM™ ® DEUXPEED ISOPLANAR™ TinyWire™ Dual Cool™ Marking Small Speakers Sound Louder Saving our world, 1mW/W/kW at a time™ TranSiC® EcoSPARK® SignalWise™ and Better™ TriFault Detect™ EfficentMax™ SmartMax™ MegaBuck™ TRUECURRENT®* ESBC™ SMART START™ MICROCOUPLER™ μSerDes™ Solutions for Your Success™ MicroFET™ ® SPM® MicroPak™ STEALTH™ MicroPak2™ Fairchild® UHC® SuperFET® MillerDrive™ Fairchild Semiconductor® Ultra FRFET™ SuperSOT™-3 MotionMax™ FACT Quiet Series™ UniFET™ SuperSOT™-6 mWSaver™ FACT® VCX™ SuperSOT™-8 OptoHiT™ FAST® VisualMax™ SupreMOS® OPTOLOGIC® FastvCore™ VoltagePlus™ OPTOPLANAR® SyncFET™ FETBench™ XS™ ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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