FQD20N06TM

FQD20N06 N-Channel QFET® MOSFET 60 V, 16.8 A, 63 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. • 16.8 A, 60 V, RDS(on) = 63 mΩ (Max.) @ VGS = 10V, ID = 8.4 A • Low Gate Charge (Typ.11.5 nC) • Low Crss (Typ. 25 pF) • 100% Avalanche Tested D D G S G D-PAK S Absolute Maximum Ratings T Symbol VDSS ID o C = 25 C unless otherwise noted. Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD20N06 60 Unit V 16.8 A 10.6 A - Continuous (TC = 100°C) IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * dv/dt PD - Pulsed 67.2 A  25 V (Note 2) 155 mJ (Note 1) 16.8 A (Note 1) 3.8 7.0 2.5 mJ V/ns W 38 0.30 -55 to +150 W W/°C °C 300 °C (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJA Parameter FQD20N06TM Thermal Resistance, Junction to Case, Max. 3.28 Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max. 110 Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max. ©2001 Fairchild Semiconductor Corporation FQD20N06 Rev. C1 1 Unit oC/W 50 www.fairchildsemi.com FQD20N06 — N-Channel QFET® MOSFET November 2013 Part Number FQD20N06TM Electrical Characteristics T Symbol Package D-PAK Top Mark FQD20N06 Packing Method Tape and Reel Reel Size 330 mm Tape Width 16 mm Quantity 2500 units o C = 25 C unless otherwise noted. Parameter Test Conditions  Off Characteristics Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 60 -- -- V BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25°C -- 0.07 -- V/°C VDS = 60 V, VGS = 0 V -- -- 1 A IDSS Zero Gate Voltage Drain Current -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 8.4 A --- 0.050 0.063  gFS Forward Transconductance VDS = 25 V, ID = 8.4 A -- 10 -- S VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 450 590 pF -- 170 220 pF -- 25 35 pF  On Characteristics  Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 48 V, TC = 125°C  Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 10 A, RG = 25  (Note 4) VDS = 48 V, ID = 20 A, VGS = 10 V (Note 4) -- 5 20 ns -- 45 100 ns -- 20 50 ns -- 25 60 ns -- 11.5 15 nC -- 3 -- nC -- 4.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 16.8 A ISM Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 16.8 A Drain-Source Diode Forward Voltage -- -- 67.2 A VSD -- -- 1.5 V trr Reverse Recovery Time -- 43 -- ns Qrr Reverse Recovery Charge -- 50 -- nC VGS = 0 V, IF = 20 A, dIF / dt = 100 A/s
 1. Repetitive rating : pulse-width limited by maximum junction temperature. 2. L = 640 µH, IAS = 16.8 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25oC. 3. ISD ≤ 20 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25oC. 4. Essentially independent of operating temperature. ©2001 Fairchild Semiconductor Corporation FQD20N06 Rev. C1 2 www.fairchildsemi.com FQD20N06 — N-Channel QFET® MOSFET Package Marking and Ordering Information VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V Bottom : 5.0 V 1 ID, Drain Current [A] ID, Drain Current [A] Top : 1 10 10 0 10 150℃ 25℃ ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ 0 10 ※ Notes : 1. VDS = 25V 2. 250μs Pulse Test -55℃ -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 80 IDR, Reverse Drain Current [A] R DS(O N) [m Ω ], Drain-Source On-Resistance 100 VGS = 10V VGS = 20V 60 40 20 ※ Note : TJ = 25℃ 0 0 10 20 30 40 50 1 10 0 10 -1 10 ID, Drain Current [A] 0.2 Coss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 400 Crss 10 0 1.2 1.4 VDS = 30V 8 6 4 2 ※ Note : ID = 20A 0 2 4 6 8 10 12 1 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2001 Fairchild Semiconductor Corporation FQD20N06 Rev. C1 1.0 VDS = 48V 0 10 0.8 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss 0 -1 10 0.6 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature V G S, Gate-Source Voltage [V] Capacitance [pF] 800 0.4 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1200 ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test 25℃ 150℃ Figure 6. Gate Charge Characteristics 3 www.fairchildsemi.com FQD20N06 — N-Channel QFET® MOSFET  !    2.5 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 2.0 1.1 1.5 1.0 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 0.5 150 ※ Notes : 1. VGS = 10 V 2. ID = 8.4 A 0.0 -100 200 -50 0 o 50 100 150 200 o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3 20 10 Operation in This Area is Limited by R DS(on) ID, Drain Current [A] ID, Drain Current [A] 2 10 100 s 1 ms 1 10 10 ms DC 0 10 ※ Notes : 15 10 5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 -1 0 10 1 10 0 25 2 10 10 50 Figure 9. Maximum Safe Operating Area ZJC(t), Thermal Response [oC/W] 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2 ※ N otes : 1 . Z θ J C( t ) = 3 . 2 8 ℃ /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 0 .0 5 10 0 .0 2 0 .0 1 -1 PDM s in g le p u ls e t1 10 t2 -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t1 , R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ] Figure 11. Transient Thermal Response Curve ©2001 Fairchild Semiconductor Corporation FQD20N06 Rev. C1 4 www.fairchildsemi.com FQD20N06 — N-Channel QFET® MOSFET  !   



   FQD20N06 — N-Channel QFET® MOSFET 50KΩ 200nF 12V VGS Same Type as DUT Qg 10V 300nF VDS VGS Qgs Qgd DUT IG = const. 3mA Charge Figure 12. Gate Charge Test Circuit & Waveform VDS RG RL VDS 90% VDD VGS VGS DUT V 10V GS 10% td(on) tr td(off) t on t off tf Figure 13. Resistive Switching Test Circuit & Waveforms VDS BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L BVDSS IAS ID RG V 10V GS GS VDD ID (t) VDS (t) VDD DUT tp Time tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms ©2001 Fairchild Semiconductor Corporation FQD20N06 Rev. C1 5 www.fairchildsemi.com + VDS _ I SD L Driver RG VGS VGS ( Driver ) I SD ( DUT ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2001 Fairchild Semiconductor Corporation FQD20N06 Rev. C1 6 www.fairchildsemi.com FQD20N06 — N-Channel QFET® MOSFET DUT FQD20N06 — N-Channel QFET® MOSFET Mechanical Dimensions Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT252-003 ©2001 Fairchild Semiconductor Corporation FQD20N06 Rev. C1 7 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 ©2001 Fairchild Semiconductor Corporation FQD20N06 Rev. C1 8 www.fairchildsemi.com FQD20N06 — N-Channel QFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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