J111

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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 N-Channel Switch Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. • Sourced from process 51 • Source & Drain are interchangeable. G G S S TO-92 SOT-23 D Figure 1. J111 / J112 / J113 Device Package D Note: Source & Drain are interchangeable Figure 2. MMBFJ111 / MMBFJ112 / MMBFJ113 Device Package Ordering Information Part Number Top Mark Package Packing Method J111 J111 TO-92 3L Bulk J111_D26Z J111 TO-92 3L Tape and Reel J111_D74Z J111 TO-92 3L Ammo J112 J112 TO-92 3L Bulk J112_D26Z J112 TO-92 3L Tape and Reel J112_D27Z J112 TO-92 3L Tape and Reel J112_D74Z J112 TO-92 3L Ammo J113 J113 TO-92 3L Bulk J113_D74Z J113 TO-92 3L Ammo J113_D75Z J113 TO-92 3L Ammo MMBFJ111 6P SOT-23 3L Tape and Reel MMBFJ112 6R SOT-23 3L Tape and Reel MMBFJ113 6S SOT-23 3L Tape and Reel © 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5 www.fairchildsemi.com J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch January 2015 Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol Parameter Value Unit VDG Drain-Gate Voltage 35 V VGS Gate-Source Voltage -35 V IGF Forward Gate Current 50 mA -55 to 150 °C TJ, TSTG Operating and Storage Junction Temperature Range Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty-cycle operations. Thermal Characteristics Values are at TA = 25°C unless otherwise noted. Max. J111 / J112 / J113(3) MMBFJ111 / MMBFJ112 / MMBFJ113(4) Unit Total Device Dissipation 625 350 mW Derate Above 25°C 5.0 2.8 mW/°C RθJC Thermal Resistance, Junction-to-Case 125 RθJA Thermal Resistance, Junction-to-Ambient 200 Symbol PD Parameter °C/W 357 °C/W Notes: 3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. 4. Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead minimum 6cm2. © 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5 www.fairchildsemi.com 2 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Absolute Maximum Ratings(1), (2) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Conditions Min. Max. Unit Off Characteristics V(BR)GSS IGSS VGS(off) ID(off) Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0 Gate Reverse Current VGS = -15 V, VDS = 0 Gate-Source Cut-Off Voltage VDS = 15 V, ID = 1.0 μA Drain Cutoff Leakage Current -35 V -1.0 111 -3.0 -10.0 112 -1.0 -5.0 113 -0.5 -3.0 VDS = 5.0 V, VGS = -10 V 1.0 nA V nA On Characteristics IDSS (5) Zero-Gate Voltage Drain Current VDS = 15 V, VGS = 0 111 20 112 5.0 113 2.0 111 rDS(on) Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0 mA 30 Ω 112 50 113 100 Small Signal Characteristics Cdg(on) Csg(on) Drain-Gate &Source-Gate On Capacitance VDS = 0, VGS = 0, f = 1.0 MHz 28 pF Cdg(off) Drain-Gate Off Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz 5.0 pF Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = -10 V, f = 1.0 MHz 5.0 pF Note: 5. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2%. © 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5 www.fairchildsemi.com 3 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Electrical Characteristics - TRANSCONDUCTANCE (mmhos) - DRAIN CURRENT (mA) - 0.4 V 6 - 0.6 V 4 - 0.8 V - 1.0 V 0 - 1.2 V fs I - 1.4 V 0 0.4 0.8 1.2 1.6 VDS - DRAIN-SOURCE VOLTAGE (V) g D 2 2 100 r DS 50 50 g 20 10 I DSS _5 - DRAIN CURRENT (mA) 125°C 25°C - 55°C V DS = 15 V _ 5 10 VGS(off) = - 1.6 V V DS = 15 V - 55°C 25°C 125°C 12 8 VGS(off) = - 1.1 V 125°C 25°C - 55°C 4 D 10 I I D - DRAIN CURRENT (mA) 25°C 125°C VGS(off) = - 2.0 V 0 0 0 -1 -2 -3 VGS - GATE-SOURCE VOLTAGE (V) - TRANSCONDUCTANCE (mmhos) 30 VGS(off) = - 3.0 V - 55°C 25°C 125°C 20 VGS(off) = - 2.0 V - 55°C 25°C 125°C 10 0 -1 -2 VGS - GATE-SOURCE VOLTAGE (V) g fs V DS = 15 V 0 -3 Figure 7. Transfer Characteristics © 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) Figure 6. Transfer Characteristics Figure 5. Transfer Characteristics g fs - TRANSCONDUCTANCE (mmhos) _ _ 1 2 5 V GS (OFF) - GATE CUTOFF VOLTAGE (V) 16 - 55°C 20 10 Figure 4. Parameter Interactions VGS(off) = - 3.0 V 30 I DSS , g fs @ V DS = 15V, V GS = 0 PULSED r DS @ 1.0 mA, V GS = 0 V GS(off) @ V DS = 15V, I D = 1.0 nA _ 0.5 Figure 3. Common Drain-Source 40 20 fs - DRAIN "ON" RESISTANCE (Ω Ω) - 0.2 V 8 100 DS T A = 25°C TYP V GS(off) = - 2.0 V V GS = 0 V r 10 30 V GS(off) = - 1.6 V - 55°C 25°C 125°C 20 VGS(off) = - 1.1 V 10 - 55°C 25°C 125°C V DS = 15 V 0 0 -0.5 -1 -1.5 VGS - GATE-SOURCE VOLTAGE (V) Figure 8. Transfer Characteristics www.fairchildsemi.com 4 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Typical Performance Characteristics r DS - NORMALIZED RESISTANCE ( Ω ) r DS - DRAIN "ON" RESISTANCE (Ω) 100 125°C V GS(off) TYP = - 2.0V 50 25°C 125°C V GS(off) - 55°C TYP = - 7.0V 20 25°C r DS @ V GS = 0 - 55°C 10 1 2 ID 5 10 20 - DRAIN CURRENT (mA) 50 100 TA = 25°C V DG = 15V f = 1.0 kHz 10 V GS(off) = - 1.4V 1 I D - DRAIN CURRENT (mA) 10 5 2 1 0 0.2 0.4 0.6 0.8 1 VGS /VGS(off) - NORMALIZED GATE-SOURCE VOLTAGE (V) T A = 25°C √ f = 0.1 - 1.0 MHz C is (V DS = 0) C is (V DS = 20) C rs (V DS = 0) 0 -4 -8 -12 -16 V GS - GATE-SOURCE VOLTAGE (V) 10 5.0V 10V 15V 20V V GS(off) = - 5.0V 20V 1 5.0V 10V 15V 10V 15V 20V V GS(off) = - 2.0V V GS(off) = - 0.85V 0.1 0.01 0.1 I D - DRAIN CURRENT (mA) 10 V DG = 15V 50 BW = 6.0 Hz @ f = 10 Hz, 100 Hz = 0.21 @ f ≥ 1.0 kHz 10 5 I D = 1.0 mA I D = 10 mA 1 0.01 -20 Figure 13. Capacitance vs. Voltage © 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5 V DG = 5.0V f = 1.0 kHz 100 e n - NOISE VOLTAGE (nV / Hz) C is (C rs ) - CAPACITANCE (pF) 100 1 10 V GS 1 -________ V GS(off) Figure 12. Output Conductance vs. Drain Current Figure 11. Transconductance vs. Drain Current 10 r DS = 100 os V GS(off) = - 3.0V 1 0.1 r DS 20 Figure 10. Normalized Drain Resistance vs. Bias Voltage - OUTPUT CONDUCTANCE ( μ mhos) 100 V GS(off) @ 5.0V, 10 μA 50 g g fs - TRANSCONDUCTANCE (mmhos) Figure 9. On Resistance vs. Drain Current 100 1 10 f - FREQUENCY (kHz) 100 Figure 14. Noise Voltage vs. Frequency www.fairchildsemi.com 5 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Typical Performance Characteristics (Continued) V DG = 15V P D - POWER DISSIPATION (mW) e n - NOISE VOLTAGE (nV / √ Hz) 100 f = 10 Hz f = 100 Hz f = 1.0 kHz 10 f = 10 kHz f = 100 kHz 1 0.01 I D 0.1 1 - DRAIN CURRENT (mA) 700 600 300 200 100 0 10 t d(OFF) ,t OFF - TURN-OFF TIME (ns) t r(ON) ,t d(ON)- TURN-ON TIME (ns) 20 t r APPROX. I D INDEPENDENT VGS(off) = 3.0V 15 T A = 25°C I D = 6.6 mA 10 2.5 mA - 6.0V t d (ON) V GS = -12V 5 0 0 V GS(off) -2 -4 -6 -8 -10 - GATE-SOURCE CUTOFF VOLTAGE (V) 25 50 75 100 TEMPERATURE ( o C) 125 150 100 T A = 25°C VGS(off)= -2.2V 80 t (off) 60 - 7.5V t d(off) DEVICE V GS(off) INDEPENDENT 40 20 0 V DD = 3.0V V GS = -12V - 4.0V t d(off) 0 2 4 6 8 I D - DRAIN CURRENT (mA) 10 Figure 18. Switching Turn-Off Time vs. Drain Current Figure 17. Switching Turn-On Time vs. Gate-Source Voltage © 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5 0 Figure 16. Power Dissipation vs. Ambient Temperature V DD = 3.0V t r (ON) SOT-23 400 Figure 15. Noise Voltage vs. Current 25 TO-92 500 www.fairchildsemi.com 6 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Typical Performance Characteristics (Continued) J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Physical Dimensions D Figure 19. 3-Lead, TO-92, JEDEC TO-92 Compliant Straight Lead Configuration, Bulk Type © 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5 www.fairchildsemi.com 7 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Physical Dimensions (Continued) Figure 20. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Type © 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5 www.fairchildsemi.com 8 J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 — N-Channel Switch Physical Dimensions (Continued) 0.95 2.92±0.20 3 1.40 1.30+0.20 -0.15 1 2.20 2 0.60 0.37 (0.29) 0.95 0.20 1.00 A B 1.90 1.90 LAND PATTERN RECOMMENDATION SEE DETAIL A 1.20 MAX 0.10 0.00 (0.93) 0.10 C C 2.40±0.30 NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE 0.23 0.08 A) REFERENCE JEDEC REGISTRATION TO-236, VARIATION AB, ISSUE H. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE INCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR EXTRUSIONS. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M - 1994. E) DRAWING FILE NAME: MA03DREV10 0.25 0.20 MIN (0.55) SEATING PLANE SCALE: 2X Figure 21. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE © 1997 Fairchild Semiconductor Corporation J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ113 Rev. 1.5 www.fairchildsemi.com 9 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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