KSC2383OTA

NPN Epitaxial Silicon Transistor KSC2383 ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25°C unless otherwise noted.) Parameter Symbol Value Unit VCBO Collector−Base Voltage 160 V VCEO Collector−Emitter Voltage 160 V VEBO Emitter−Base Voltage 6 V IC Collector Current 1 A IB Base Current 0.5 A TJ Junction Temperature 150 °C TSTG Storage Temperature −55 to +150 °C www.onsemi.com TO−92 3 LF CASE 135AM MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS AC2 383X YWW (Values are at TA = 25°C unless otherwise noted.) (Note 1) Parameter Symbol PD RθJA Value Unit Power Dissipation 900 mW Derate Above 25_C 7.2 mW/°C Thermal Resistance, Junction−to−Ambient 138 °C/W 1. PCB size: FR−4, 76 mm × 114 mm × 1.57 mm (3.0 inch × 4.5 inch × 0.062 inch) with minimum land pattern size. 1: Emitter 2: Collector 3: Base 1 A C2383 X YWW 2 3 = Assembly Code = Device Code =O/Y = Date Code ORDERING INFORMATION Device © Semiconductor Components Industries, LLC, 2002 March, 2021 − Rev. 3 1 Package Shipping KSC2383OTA TO−92 3 LF (Pb−Free) 2000 / Fan−Fold KSC2383YTA TO−92 3 LF (Pb−Free) 2000 / Fan−Fold Publication Order Number: KSC2383/D KSC2383 ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted.) Symbol Parameter Conditions Min. Typ. Max. Unit ICBO Collector Cut−Off Current VCB = 150 V, IE = 0 − − 1 mA IEBO Emitter Cut−Off Current VEB = 6 V, IC = 0 − − 1 mA Collector−Emitter Breakdown Voltage IC = 10 mA, IB = 0 160 − − V DC Current Gain VCE = 5 V, IC = 200 mA 60 − 320 VCE(sat) Collector−Emitter Saturation Voltage IC = 500 mA, IB = 50 mA − − 1.5 V VBE(on) Base−Emitter On Voltage VCE = 5 V, IC = 5 mA 0.45 − 0.75 V Current Gain Bandwidth Product VCE = 5 V, IC = 200 mA 20 100 − MHz Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz − − 20 pF BVCEO hFE fT Cob Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. hFE CLASSIFICATION Classification R O Y hFE 60 ~ 120 100 ~ 200 160 ~ 320 TYPICAL PERFORMANCE CHARACTERISTICS 1000 Emitter Common TA = 25°C 1.2 IB = 15 mA 1.0 IB = 10 mA IB = 6 mA 0.8 IB = 4 mA 0.6 IB = 3 mA IB = 2.5 mA IB = 2 mA IB = 1.5 mA IB = 1 mA IB = 0.5 mA 0.4 0.2 0.0 0.0 Emitter Common hFE, DC Current Gain IC, Collector Current (mA) 1.4 0.2 0.4 0.6 0.8 1.0 1.2 VCE = 5 V 10 100 1000 VCE, Collector−Emitter Voltage (V) IC, Controller Current (mA) Figure 1. Static Characteristic Figure 2. DC Current Gain 1 Emitter Common TA = 25°C 100 VCE = 10 V VCE = 5 V VCE = 1 V 100 VBE(sat), VCE(sat), Saturation Voltage (V) hFE, DC Current Gain 100 1 10 1.4 1000 10 VCE = 10 V Emitter Common TA = 25°C 0.1 IC / IB = 10 IC / IB = 5 0.01 0.001 1000 1 10 100 1000 IC, Controller Current (mA) IC, Controller Current (mA) Figure 3. DC Current Gain Figure 4. Collector−Emitter Saturation Voltage www.onsemi.com 2 KSC2383 TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 1000 Emitter Common IC / IB = 10 0.8 Cob, Capacitance (pF) 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 100 10 1 1.0 Emitter Common f = 1 MHz TA = 25°C 1 VBE, Base−Emitter Voltage (V) 1000 Figure 6. Collector Output Capacitance 1000 10 Emitter Common TA = 25°C IC, Collector Current (A) fT, Current Gain Bandwidth Product (MHz) 100 VCB, Collector Base Voltage (V) Figure 5. Base−Emitter On Voltage 100 10 1 10 1 10 100 IC Max. (Pulse) 10 ms 100 ms 0.1 IC Max. = 1 A DC TA = 25°C 0.01 0.001 1000 1 ms 1 VCEO Max. IC, Collector Current (A) 1.0 1 10 100 VCE, Collector−Emitter Voltage (V) IC, Collector Current (A) Figure 7. Current Gain Bandwidth Product Figure 8. Safe Operating Area www.onsemi.com 3 1000 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−92 3 8.0x4.9 (LEADFORMED) CASE 135AM ISSUE B DOCUMENT NUMBER: DESCRIPTION: 98AON14058G DATE 14 JAN 2021 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TO−92 3 8.0X4.9 (LEADFORMED) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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